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Novel Slumped SRAM Configuration using QCA Leveraging Differential Voltage Sensing for Enhanced Stability and Efficiency.
- Published in:
- Journal of Cybersecurity & Information Management, 2024, v. 14, n. 1, p. 207, doi. 10.54216/JCIM.140114
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- Article
Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM).
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- Micromachines, 2024, v. 15, n. 8, p. 1056, doi. 10.3390/mi15081056
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- Article
Design and analysis of SRAM cell using reversible logic gates towards smart computing.
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- Journal of Supercomputing, 2022, v. 78, n. 2, p. 2287, doi. 10.1007/s11227-021-03851-z
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- Article
Periodic learning-based region selection for energy-efficient MLC STT-RAM cache.
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- Journal of Supercomputing, 2019, v. 75, n. 10, p. 6220, doi. 10.1007/s11227-019-02846-1
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- Article
Schmitt trigger-based single-ended 7T SRAM cell for Internet of Things (IoT) applications.
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- Journal of Supercomputing, 2018, v. 74, n. 9, p. 4613, doi. 10.1007/s11227-018-2433-3
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- Article
LOW POWER SRAM CELL DESIGN WITH POWER GATING TECHNIQUE.
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- i-Manager's Journal on Circuits & Systems, 2022, v. 10, n. 1, p. 25, doi. 10.26634/jcir.10.1.18569
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- Article
LOW POWER RADIATION HARDENED SRAM CELLS.
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- i-Manager's Journal on Circuits & Systems, 2020, v. 8, n. 2, p. 22, doi. 10.26634/jcir.8.2.18091
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- Article
IMPLEMENTATION OF LOW POWER HIGH SPEED 64-BIT MEMORY UNIT USING 8T SRAM CELL AT 70 NM TECHNOLOGY.
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- i-Manager's Journal on Circuits & Systems, 2018, v. 6, n. 2, p. 26
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- Article
DESIGN OF DUAL-POWER-SUPPLY-SRAM AND MEASURE OF ACTIVE AND STANDBY MODE POWER BY USING BL CALCULATOR.
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- i-Manager's Journal on Circuits & Systems, 2018, v. 6, n. 2, p. 19
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- Article
COMPARISON OF POWER AND LATENCY OPTIMIZED 7T SRAM BIT-CELL WITH 6T SRAM BIT-CELL.
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- i-Manager's Journal on Circuits & Systems, 2018, v. 6, n. 2, p. 8, doi. 10.26634/jcir.6.2.14760
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- Article
Leakage Power Reduction in Read and Write Enhanced Macro Memory Circuit Design Using Transistor Stacking and Reversible Approach.
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- Advances in Systems Science & Applications, 2022, v. 22, n. 1, p. 130
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- Article
A Low Threshold Voltage Ultradynamic Voltage Scaling SRAM Write Assist Technique for High-Speed Applications.
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- Active & Passive Electronic Components, 2023, p. 1, doi. 10.1155/2023/1697836
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- Article
Performance and Stability Analysis of Built-In Self-Read and Write Assist 10T SRAM Cell.
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- Active & Passive Electronic Components, 2023, p. 1, doi. 10.1155/2023/3371599
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- Article
A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node.
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- Active & Passive Electronic Components, 2023, p. 1, doi. 10.1155/2023/2364341
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- Article
Comprehensive Optimization of Dual Threshold Independent-Gate FinFET and SRAM Cells.
- Published in:
- Active & Passive Electronic Components, 2018, p. 1, doi. 10.1155/2018/4512924
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- Article
DRV Evaluation of 6T SRAM Cell Using Efficient Optimization Techniques.
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- Active & Passive Electronic Components, 2018, p. 1, doi. 10.1155/2018/3457284
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- Article
Hardware Architecture Design for High-performance H.264/AVC Deblocking Filter.
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- Sensors & Materials, 2019, v. 31, n. 3, Part 3, p. 905, doi. 10.18494/SAM.2019.2163
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- Article
SCALING THE MEMORY RELIABILITY WALL.
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- Intel Technology Journal, 2013, v. 17, n. 1, p. 18
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- Article
一种新型 SoC 启动方案的设计与实现.
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- Telecommunication Engineering, 2020, v. 60, n. 12, p. 1491, doi. 10.3969/j.issn.1001-893x.2020.12.017
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- Article
Design of Parallel Memory Allocation using Error Resilient Ternary Content-addressable Memory for Fast Error Correction.
- Published in:
- Turkish Online Journal of Qualitative Inquiry, 2021, v. 12, n. 9, p. 8182
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- Article
Performance Evaluation Of 10T SRAM Cell Using Adiabatic Pre-Charged Unit Cell.
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- Turkish Online Journal of Qualitative Inquiry, 2021, v. 12, n. 5, p. 3182
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- Article
A Symmetric Novel 8T3R Non-Volatile SRAM Cell for Embedded Applications.
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- Symmetry (20738994), 2022, v. 14, n. 4, p. N.PAG, doi. 10.3390/sym14040768
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- Article
Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device.
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- Symmetry (20738994), 2020, v. 12, n. 12, p. 2030, doi. 10.3390/sym12122030
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- Article
Improved Stability for Robust and Low-Power SRAM Cell Using FinFET Technology.
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- Journal of Circuits, Systems & Computers, 2024, v. 33, n. 6, p. 1, doi. 10.1142/S0218126624501068
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- Article
Design and Simulation of a Novel 16T SRAM Cell for Low Power Memory Architecture.
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- Journal of Circuits, Systems & Computers, 2024, v. 33, n. 1, p. 1, doi. 10.1142/S0218126624500038
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- Article
Author Index Volume 32 (2023).
- Published in:
- Journal of Circuits, Systems & Computers, 2023, v. 32, n. 18, p. 1, doi. 10.1142/S0218126623990013
- Publication type:
- Article
High-Stability and High-Speed 11T CNTFET SRAM Cell for MIMO Applications.
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- Journal of Circuits, Systems & Computers, 2023, v. 32, n. 17, p. 1, doi. 10.1142/S0218126623502912
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- Article
Low Power Static Random-Access Memory Cell Design for Mobile Opportunistic Networks Sensor Nodes.
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- Journal of Circuits, Systems & Computers, 2023, v. 32, n. 5, p. 1, doi. 10.1142/S0218126623500780
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- Article
Improved Read/Write Stability-Based Level Shift 5T Ternary SRAM Cell Design Using Enhanced Gate Diffusion Input BWGCNTFET.
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- Journal of Circuits, Systems & Computers, 2023, v. 32, n. 1, p. 1, doi. 10.1142/S0218126623500032
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- Article
Author Index Volume 31 (2022).
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 18, p. 1, doi. 10.1142/S0218126622990018
- Publication type:
- Article
Design of a High Performance 1 Kb SRAM Array Using Proposed Soft Error Hardened 12T SRAM Cell.
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 14, p. 1, doi. 10.1142/S0218126622502401
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- Article
Design of High Stability and Low Power 7T SRAM Cell in 32-NM CNTFET Technology.
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 13, p. 1, doi. 10.1142/S0218126622502334
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- Article
A Low-Power and High-Stability 8T SRAM Cell with Diode-Connected Transistors.
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 9, p. 1, doi. 10.1142/S0218126622501547
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- Article
AM&FT: An Aging Mitigation and Fault Tolerance Framework for SRAM-Based FPGA in Space Applications.
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 7, p. 1, doi. 10.1142/S0218126622501365
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- Article
In-Memory Computing on Resistive RAM Systems Using Majority Operation.
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 4, p. 1, doi. 10.1142/S0218126622500712
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- Article
Design of Low Leakage 9T SRAM Cell with Improved Performance for Ultra-Low Power Devices.
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 2, p. 1, doi. 10.1142/S021812662250027X
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- Article
Characterization of Stable 12T SRAM with Improved Critical Charge.
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 2, p. 1, doi. 10.1142/S0218126622500232
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- Article
Author Index Volume 30 (2021).
- Published in:
- Journal of Circuits, Systems & Computers, 2021, v. 30, n. 16, p. 1, doi. 10.1142/S0218126621990012
- Publication type:
- Article
Design and Analysis of SRAM Cell using Negative Bit-Line Write Assist Technique and Separate Read Port for High-Speed Applications.
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- Journal of Circuits, Systems & Computers, 2021, v. 13, n. 15, p. 1, doi. 10.1142/S0218126621502704
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- Article
A Low-Leakage Variation-Aware 10T SRAM Cell for IoT Applications.
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- Journal of Circuits, Systems & Computers, 2021, v. 30, n. 13, p. 1, doi. 10.1142/S0218126621502431
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- Article
A Novel Darlington-Based 8T CNTFET SRAM Cell for Low Power Applications.
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- Journal of Circuits, Systems & Computers, 2021, v. 30, n. 12, p. 1, doi. 10.1142/S0218126621502133
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- Article
Design of Low Power with Expanded Noise Margin Subthreshold 12T SRAM Cell for Ultra-Low Power Devices.
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- Journal of Circuits, Systems & Computers, 2021, v. 30, n. 06, p. 1, doi. 10.1142/S0218126621501061
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- Article
Design of Low Power Half Select Free 10T Static Random-Access Memory Cell.
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- Journal of Circuits, Systems & Computers, 2021, v. 30, n. 04, p. N.PAG, doi. 10.1142/S0218126621500730
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- Article
Author Index Volume 29 (2020).
- Published in:
- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 16, p. N.PAG, doi. 10.1142/S0218126620990017
- Publication type:
- Article
Enhancing the Lifetime of a Phase Change Memory with Bit-Flip Reversal.
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- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 14, p. N.PAG, doi. 10.1142/S0218126620502199
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- Article
Design of a Stable Low Power 11-T Static Random Access Memory Cell.
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- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 13, p. N.PAG, doi. 10.1142/S0218126620502060
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- Article
High Stable and Low Power 10T CNTFET SRAM Cell.
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- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 10, p. N.PAG, doi. 10.1142/S0218126620501583
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- Article
A Single-Ended 28-nm CMOS 6T SRAM Design with Read-assist Path and PDP Reduction Circuitry.
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- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 6, p. N.PAG, doi. 10.1142/S0218126620500954
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- Article
High Stable and Low Power 8T CNTFET SRAM Cell.
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- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 5, p. N.PAG, doi. 10.1142/S0218126620500802
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- Article
A 32 nm Read Disturb-free 11T SRAM Cell with Improved Write Ability.
- Published in:
- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 5, p. N.PAG, doi. 10.1142/S021812662050067X
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- Article