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Core–Shell Semiconductor-Graphene Nanoarchitectures for Efficient Photocatalysis: State of the Art and Perspectives.
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- Nano-Micro Letters, 2024, v. 16, n. 1, p. 1, doi. 10.1007/s40820-024-01503-4
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- Article
Research progress on electrochemical characteristics of galena in flotation and grinding processes.
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- International Journal of Electrochemical Science, 2024, v. 19, n. 9, p. 1, doi. 10.1016/j.ijoes.2024.100717
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- Article
Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them.
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- Semiconductors, 2024, v. 58, n. 3, p. 222, doi. 10.1134/S1063782624030059
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Large-scale sub-5-nm vertical transistors by van der Waals integration.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-52150-7
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Leistungshalbleiter für die nächste Generation Elektroautos.
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- Elektronik Industrie, 2024, p. 9
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- Article
Zu 100 Prozent mit Ökostrom betrieben.
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- Elektronik Industrie, 2024, p. 6
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- Article
Logarithmic Relaxation of the Photoconductivity of a Quasi-One-Dimensional TiS<sub>3</sub> Semiconductor.
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- JETP Letters, 2024, v. 120, n. 2, p. 133, doi. 10.1134/S0021364024602197
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Band Gap Variation of 2D CdTe Slabs in the Sphalerite Phase and in the Phase with Boundary Chalcogen Atoms.
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- Semiconductors, 2024, v. 58, n. 2, p. 120, doi. 10.1134/S1063782624020040
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Theoretical Estimates of the Thermoelectric Power Factor of Graphene Encapsulated between 3D and 2D Semiconductor and Metal Slabs.
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- Semiconductors, 2024, v. 58, n. 2, p. 110, doi. 10.1134/S1063782624020039
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Perovskite‐Like Liquid‐Crystalline Materials Based on Polyfluorinated Imidazolium Cations.
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- Angewandte Chemie, 2024, v. 136, n. 37, p. 1, doi. 10.1002/ange.202408570
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Double Negative Media Based on Antiferromagnetic Semiconductors for the Terahertz Frequency Range.
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- Technical Physics Letters, 2024, v. 50, n. 2, p. 182, doi. 10.1134/S1063785023180049
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Strain fingerprinting of exciton valley character in 2D semiconductors.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-51195-y
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- Article
Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 352, doi. 10.15407/spqeo26.03.352
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Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 278, doi. 10.15407/spqeo26.03.278
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Electromagnetic radiation of semiconductor crystals in crossed electric and magnetic fields.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 25, doi. 10.15407/spqeo26.01.025
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Self-organized structures induced by external white noise and nanosized levels of their formation in the non-crystalline As-S(Se) semiconductor systems.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 402, doi. 10.15407/spqeo25.04.402
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Peculiarities of amplitude and phase spectra of semiconductor structures in THz frequency range.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 121, doi. 10.15407/spqeo25.02.121
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Special regularities for lowering temperature during growth of high-quality CdTe semiconductor layers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 1, p. 036, doi. 10.15407/spqeo25.01.036
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Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 290, doi. 10.15407/spqeo23.03.290
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Study of structural, electrical and optical properties of MoRe<sub>0.001</sub>Se<sub>1.999</sub> single crystal.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 267, doi. 10.15407/spqeo23.03.267
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Empirical prediction of thermal properties, microhardness and sound velocity of cubic zinc-blende AlN.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 4, p. 404, doi. 10.15407/spqeo22.04.404
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Optimization of morphology of submonolayer metallic nanoparticles to enhance light trapping on a semiconductor surface.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 4, p. 410, doi. 10.15407/spqeo22.04.410
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2D semiconductor structures as a basis for new high-tech devices (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 380, doi. 10.15407/spqeo21.04.380
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Synergetics of the instability and randomness in formation of gradient modified semiconductor structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 365, doi. 10.15407/spqeo21.04.365
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Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 3, p. 263, doi. 10.15407/spqeo21.02.263
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Condensons and bicondensons in one-dimensional systems.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 3, p. 231, doi. 10.15407/spqeo21.03.231
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Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 187, doi. 10.15407/spqeo21.02.187
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Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 152, doi. 10.15407/spqeo21.02.152
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Viktor Oleksiyovich Presnov and his main contribution to physics of semiconductors and electronic technique.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 105
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I<sup>127</sup> NQR spectra of Pb<sub>1-x</sub>Cd<sub>x</sub>I<sub>2</sub> and (BiI<sub>3</sub>)<sub>(1-x)</sub>(PbI<sub>2</sub>)<sub>x</sub> of mixed layered semiconductors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 340, doi. 10.15407/spqeo20.03.340
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The influence of the guest cavitations loading degree in fractal nanohybrids GaSe(β-cyclodextrin<FeSO<sub>4</sub>>> on the current passing and polarization processes. The giant "battery spin" effect at room temperature.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 375
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High-frequency electromagnetic radiation of germanium crystals in magnetic fields.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 231, doi. 10.15407/spqeo20.02.231
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New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 195, doi. 10.15407/spqeo20.02.195
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Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 168, doi. 10.15407/spqeo20.02.168
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High-frequency electromagnetic radiation of germanium crystals in magnetic fields.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 231, doi. 10.15407/spqeo20.02.231
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Quantum-size effects in semiconductor heterosystems.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 224, doi. 10.15407/spqeo20.02.224
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Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 321, doi. 10.15407/spqeo19.04.321
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Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor-oxide film.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 452, doi. 10.15407/spqeo18.04.452
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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 2, p. 144, doi. 10.15407/spqeo18.02.144
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On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 90
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Nonlinear-optical processes at streamer discharge in semiconductors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 36
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Uncooled p(Pb<sub>1-x</sub>Sn<sub>x</sub>Se)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 408
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High-speed optical recording in vitreous chalcogenide thin films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 389
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Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 243
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New formalism for self-consistent parameters optimization of highly efficient solar cells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 134
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On features of crystal structure of semiconductor-ferroelectric Ag<sub>3</sub>AsS<sub>3</sub>.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 293
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Light emission by point dipole located inside spherical (semiconductor) particle in the vicinity of a spherical metal particle.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 227
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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 351
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Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 3, p. 288
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Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 3, p. 268
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- Article