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Code design of ...-ispotty-byte error correcting θ-codes.
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- Journal of Analysis & Applications, 2024, v. 22, n. 1, p. 31
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- Article
Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-36076-0
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- Article
Enhancement of the Bond Strength and Reduction of Wafer Edge Voids in Hybrid Bonding.
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- Micromachines, 2022, v. 13, n. 4, p. N.PAG, doi. 10.3390/mi13040537
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- Article
Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications.
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- Micromachines, 2021, v. 12, n. 3, p. 301, doi. 10.3390/mi12030301
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- Article
Data Storage Through Electromagnetic Waves.
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- IUP Journal of Electrical & Electronics Engineering, 2014, v. 7, n. 3, p. 25
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- Article
Conditional control of the quantum states of remote atomic memories for quantum networking.
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- Nature Physics, 2006, v. 2, n. 12, p. 844, doi. 10.1038/nphys450
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- Article
Partial-PreSET: Enhancing Lifetime of PCM-Based Main Memory with Fine-Grained SET Operations.
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- International Journal of Parallel Programming, 2018, v. 46, n. 4, p. 736, doi. 10.1007/s10766-017-0527-9
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- Article
3D NAND Flash Based on Planar Cells.
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- Computers (2073-431X), 2017, v. 6, n. 4, p. 28, doi. 10.3390/computers6040028
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- Article
Fading Memories: A Process Theory of Strategic Business Exit in Dynamic Environments.
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- Administrative Science Quarterly, 1994, v. 39, n. 1, p. 24, doi. 10.2307/2393493
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- Article
THE INFLUENCE OF NEUTRON AND GAMMA RADIATION ON THE RELIABILITY OF MAGNETIC AND SEMICONDUCTOR MEMORIES.
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- Nuclear Technology & Radiation Protection, 2024, v. 39, n. 1, p. 21, doi. 10.2298/NTRP2401021K
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- Article
Influence of electromagnetic pollution of the electron beam generator and high-energy radioactive source on the memory components.
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- Nuclear Technology & Radiation Protection, 2023, v. 38, n. 1, p. 10, doi. 10.2298/NTRP2301010K
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- Article
Intel Ventures with STMicroelectronics MV.
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- IT Professional, 2007, v. 9, n. 5, p. 8
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- Article
Geometrical Optics and Models of Computer Memory Fragmentation.
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- Studies in Applied Mathematics, 2003, v. 111, n. 2, p. 185, doi. 10.1111/1467-9590.t01-1-00232
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- Article
A New Type of ECG Signal Acquisition and Storage Nonvolatile Chip Embedded in Mobile Devices for Sports Monitoring.
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- Journal of Nanomaterials, 2022, p. 1, doi. 10.1155/2022/3393872
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- Article
A spill data aware memory assignment technique for improving power consumption of multimedia memory systems.
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- Multimedia Tools & Applications, 2019, v. 78, n. 5, p. 5463, doi. 10.1007/s11042-018-6783-x
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- Article
A joint encoder–decoder framework for supporting energy efficient audio decoding.
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- Multimedia Systems, 2009, v. 15, n. 2, p. 101, doi. 10.1007/s00530-009-0152-6
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- Article
Enhancing the security of memory in cloud infrastructure through in‐phase change memory data randomisation.
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- IET Computers & Digital Techniques (Wiley-Blackwell), 2021, v. 15, n. 5, p. 321, doi. 10.1049/cdt2.12023
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- Article
Efficient low-complexity two-dimensional equalisation technique for multi-level cell flash memory storage systems.
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- IET Communications (Wiley-Blackwell), 2018, v. 12, n. 14, p. 1671, doi. 10.1049/iet-com.2017.0440
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- Article
g-byte error correcting codes for semiconductor memories.
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- Journal of Algebra & Applied Mathematics, 2022, v. 20, n. 1, p. 17
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- Article
Bipolar Switching Properties of Bilayer V<sub>2</sub>O<sub>5</sub>/Sm<sub>2</sub>O<sub>3</sub> Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology.
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- Sensors & Materials, 2018, v. 30, n. 4, Part 2, p. 933, doi. 10.18494/SAM.2018.1796
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- Article
Memristor-Based D-Flip-Flop Design and Application in Built-In Self-Test.
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- Electronics (2079-9292), 2023, v. 12, n. 14, p. 3019, doi. 10.3390/electronics12143019
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- Article
Survey of Reliability Research on 3D Packaged Memory.
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- Electronics (2079-9292), 2023, v. 12, n. 12, p. 2709, doi. 10.3390/electronics12122709
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- Article
A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application.
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- Electronics (2079-9292), 2021, v. 10, n. 16, p. 1954, doi. 10.3390/electronics10161954
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- Article
Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices.
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- Electronics (2079-9292), 2021, v. 10, n. 15, p. 1759, doi. 10.3390/electronics10151759
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- Article
An Efficient LUT Design on FPGA for Memory-Based Multiplication.
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- Iranian Journal of Electrical & Electronic Engineering, 2019, v. 15, n. 4, p. 462, doi. 10.22068/IJEEE.15.4.462
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- Article
Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.
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- Scientific Reports, 2015, p. 17103, doi. 10.1038/srep17103
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- Publication type:
- Article
The ovonic threshold switching characteristics in Si<sub>x</sub>Te<sub>1−x</sub> based selector devices.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 11, p. 1, doi. 10.1007/s00339-018-2153-9
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- Article
Impact of threshold voltage variation on 1S1R crossbar array with threshold switching selectors.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 5, p. 1, doi. 10.1007/s00339-017-0973-7
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- Article
Digital data storage on DNA tape using CRISPR base editors.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-42223-4
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- Publication type:
- Article
Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41363-x
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- Article
Large-Scale Delayering of Semiconductor Devices with Nanometer-Scale Uniformity over a Millimeter-Scale Area.
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- Journal of Failure Analysis & Prevention, 2024, v. 24, n. 5, p. 2174, doi. 10.1007/s11668-024-02024-3
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- Article
Member News.
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- Chemistry & Industry, 2023, v. 87, n. 11, p. 46, doi. 10.1002/cind.10195
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- Article
Highly Enhanced Polarization Switching Speed in HfO<sub>2</sub>‐based Ferroelectric Thin Films via a Composition Gradient Strategy.
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- Advanced Functional Materials, 2023, v. 33, n. 31, p. 1, doi. 10.1002/adfm.202301746
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- Article
Investigation of Time–Dependent Resistive Switching Behaviors of Unipolar Nonvolatile Organic Memory Devices.
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- Advanced Functional Materials, 2018, v. 28, n. 35, p. 1, doi. 10.1002/adfm.201801162
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- Article
A comprehensive investigation of Bi<sub>2</sub>O<sub>3</sub> on the physical, structural, optical, and electrical properties of K<sub>2</sub>O.ZnO.V<sub>2</sub>O<sub>5</sub>.B<sub>2</sub>O<sub>3</sub> glasses.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-58567-w
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- Article
An Ultra-low Power, High SNM, High Speed and High Temperature of 6T-SRAM Cell in 3C-SiC 130 nm CMOS Technology.
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 4, p. 1, doi. 10.21272/jnep.12(4).04024
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- Article
Advances in flash memory devices.
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- Materials Science (0137-1339), 2010, v. 28, n. 1, p. 105
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- Article
Scaling of nonvolatile memories to nanoscale feature sizes.
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- Materials Science (0137-1339), 2007, v. 25, n. 1, p. 33
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- Article
The Persistence of Memory.
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- EMedia Magazine, 2002, v. 15, n. 4, p. 22
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- Article
Buckyballs give flash a boost.
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- Nature, 2008, v. 452, n. 7190, p. -1, doi. 10.1038/452921a
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- Article
Ferroelectric Memristor Based on Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film Combining Memristive and Neuromorphic Functionalities.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 9, p. 1, doi. 10.1002/pssr.202000224
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- Article
Controlled Current Transport in Pt/Nb:SrTiO<sub>3</sub> Junctions via Insertion of Uniform Thin Layers of TaO<sub>x</sub>.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 7, p. N.PAG, doi. 10.1002/pssr.201900136
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- Publication type:
- Article
Characterization of Cr-doped Sb<sub>2</sub>Te<sub>3</sub> films and their application to phase-change memory.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 8, p. 470, doi. 10.1002/pssr.201510214
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- Article
An Efficient Spectral Dynamical Core for Distributed Memory Computers.
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- Monthly Weather Review, 2002, v. 130, n. 5, p. 1384, doi. 10.1175/1520-0493(2002)130<1384:AESDCF>2.0.CO;2
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- Article
Consumer Storage Devices Enter Data Acquisition Market.
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- EE: Evaluation Engineering, 2006, v. 45, n. 3, p. 26
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- Article
Addressing the Flash Memory Challenge.
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- EE: Evaluation Engineering, 2006, v. 45, n. 3, p. 20
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- Article
DSOs and MSOs Offer 100-MHz Performance.
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- 2005
- Publication type:
- Product Review
Low Power High Speed Gated Ground 7t Sram Using Multi-Threshold Cmos Technique.
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- Journal of Active & Passive Electronic Devices, 2020, v. 15, n. 1/2, p. 117
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- Article
A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27133, doi. 10.1007/s10854-021-07105-9
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- Article
Built-In Self-Test Design for the 3D-Stacked Wide-I/O DRAM.
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- Journal of Electronic Testing, 2016, v. 32, n. 2, p. 111, doi. 10.1007/s10836-016-5570-8
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- Article