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Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy.
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- Russian Physics Journal, 2016, v. 59, n. 3, p. 442, doi. 10.1007/s11182-016-0792-x
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- Article
Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1293, doi. 10.1007/s11664-014-3536-0
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- Article
Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1300, doi. 10.1007/s11664-015-3658-z
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- Article
Stepwise Evolution of DNA-Programmable Nanoparticle Superlattices.
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- Angewandte Chemie, 2013, v. 125, n. 26, p. 6756, doi. 10.1002/ange.201301936
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- Article
Substrate Selection for Full Exploitation of Organic Semiconductor Films: Epitaxial Rubrene on β-Alanine Single Crystals.
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- Advanced Materials Interfaces, 2015, v. 2, n. 18, p. n/a, doi. 10.1002/admi.201500423
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- Article
Transport at the Epitaxial Interface between Germanium and Functional Oxides.
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- Advanced Materials Interfaces, 2015, v. 2, n. 18, p. n/a, doi. 10.1002/admi.201500193
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- Article
Multiparametric measurements of epitaxial semiconductor structures with the use of one-dimensional microwave photonic crystals.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 1, p. 42, doi. 10.1134/S1064226916010125
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- Article
Influence of GaN substrate crystallographic quality on the intensity of AlGaN epitaxial layer X-ray diffraction peaks.
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- Crystal Research & Technology, 2015, v. 50, n. 9/10, p. 759, doi. 10.1002/crat.201500051
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- Article