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Characterization and Optoelectronic Effects of Iridium-Doped ZnO Thin Films for Heterojunction Applications.
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- Journal of Natural & Applied Sciences, 2024, v. 28, n. 2, p. 96, doi. 10.19113/sdufenbed.1345637
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- Article
The Tobin Coefficient: A Relevant Photodetector Performance Metric for IR Imaging.
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- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 5874, doi. 10.1007/s11664-024-11302-7
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- Article
High-Performance UV–Visible Broad Spectral Phototransistors Based on CuPc/Cs 3 Bi 2 I 9 Heterojunction.
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- Coatings (2079-6412), 2024, v. 14, n. 8, p. 966, doi. 10.3390/coatings14080966
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- Article
Physics of microelectronic devices Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 385, doi. 10.15407/spqeo25.04.385
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- Article
Dark current and 1/f noise in forward biased InAs photodiodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 466, doi. 10.15407/spqeo24.04.466
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Investigation of Ge p-i-n photodetector as a part of pulsed laser rangefinder prototype.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 1, p. 100, doi. 10.15407/spqeo24.01.100
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- Article
1/ƒ noise and carrier transport mechanisms in InSb p<sup>+</sup>-n junctions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 374, doi. 10.15407/spqeo21.04.374
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Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 3, p. 294, doi. 10.15407/spqeo21.03.294
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- Article
Carrier transport mechanisms in InSb diffusion p-n junctions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 325
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Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 256
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- Article
Tunneling current via dislocations in InAs and InSb infrared photodiodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 416
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- Article
Anti-reflection coatings based on SnO<sub>2</sub>, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub> films for photodiodes operating in ultraviolet and visible spectral ranges.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 298
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- Article
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 424
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- Article
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the space charge region on the surface generation of carriers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 3, p. 91, doi. 10.15407/spqeo10.03.091
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- Article
Estimation of frequency characteristics of photodiode determined by motion of charge carriers in the space-charge region.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 3, p. 40, doi. 10.15407/spqeo9.03.040
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- Article
Silicon photodiode & preamplifier characteristic properties under background radiation conditions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 83, doi. 10.15407/spqeo8.01.083
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Development of an HPLC method for the identification and dosage of non-allowed substances in cosmetic products. Part I: local anaesthetics and antihistaminics.
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- Analytical & Bioanalytical Chemistry, 2004, v. 380, n. 5/6, p. 767, doi. 10.1007/s00216-004-2807-7
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- Article
Stimuli‐Responsive Dual‐Color Photon Upconversion: A Singlet‐to‐Triplet Absorption Sensitizer in a Soft Luminescent Cyclophane.
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- Angewandte Chemie, 2018, v. 130, n. 11, p. 2856, doi. 10.1002/ange.201712644
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- Article
Distributed lightning monitoring: an affordable proposal.
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- Multimedia Tools & Applications, 2017, v. 76, n. 19, p. 19825, doi. 10.1007/s11042-016-3607-8
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- Article
Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 8, p. 8340, doi. 10.1007/s10854-016-4843-4
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Synthesis of zinc oxide colloidal nanorods for inorganic-organic hybrid photodiode application.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 10, p. 8212, doi. 10.1007/s10854-015-3483-4
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Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 456, doi. 10.1007/s10854-008-9669-2
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- Article
High temperature assessment of nitride-based devices.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 189, doi. 10.1007/s10854-007-9298-1
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Photoconductivity decay in silicon spheres in response to impulse light stimulation.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 111, doi. 10.1007/s10854-007-9156-1
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The ultra sensitive TV pickup tube from conception to recent development.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 321, doi. 10.1007/s10854-007-9215-7
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- Article
Chemical characterization and origin of dyes used in the manufacture of Beninese cultural heritage objects.
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- Color Research & Application, 2019, v. 44, n. 2, p. 234, doi. 10.1002/col.22325
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Author Correction: Subpixel three-dimensional laser imaging with a downscaled avalanche photodiode array using code division multiple access.
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- 2021
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- Correction Notice
Real-time Polymerase Chain Reaction System Using a Camera for Open Platform.
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- Sensors & Materials, 2019, v. 31, n. 5, Part 2, p. 1647, doi. 10.18494/SAM.2019.2285
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- Article
Compact Fluorescence Detection System for Polymerase Chain Reaction Chips.
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- Sensors & Materials, 2019, v. 31, n. 5, Part 2, p. 1635, doi. 10.18494/SAM.2019.2284
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- Article
Compact Urea Sensor System Based on Chemiluminescence for Dialysis Machine.
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- Sensors & Materials, 2019, v. 31, n. 2, Part 3, p. 607, doi. 10.18494/SAM.2019.2026
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- Article
Analyses of Responsivity and Quantum Efficiency of p-Si/i-β-FeSi<sub>2</sub>/n-Si Photodiodes.
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- Sensors & Materials, 2018, v. 30, n. 4, Part 2, p. 925, doi. 10.18494/SAM.2018.1795
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- Article
Development and Comparison of Fiber-Optic Water Temperature Sensors with Different Sized Metal Caps.
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- Sensors & Materials, 2017, v. 29, n. 7, Part 2, p. 1049, doi. 10.18494/SAM.2017.1567
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- Article
Temperature Compensation for a Microoptical Displacement Sensor Using an Integrated Thermal Sensor.
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- Sensors & Materials, 2016, v. 28, n. 12, p. 1337, doi. 10.18494/sam.2016.1449
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- Article
A 3D Optical Sensor Using Optical Axis Deviation Method for Rotational Errors.
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- Sensors & Materials, 2016, v. 28, n. 9, p. 1053, doi. 10.18494/sam.2016.1394
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- Article
Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes.
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- Metrology & Measurement Systems, 2015, v. 22, n. 1, p. 119, doi. 10.1515/mms-2015-0010
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- Article
Active Stabilization of the Beam Pointing of a High- Power KrF Laser System.
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- Metrology & Measurement Systems, 2015, v. 22, n. 1, p. 165, doi. 10.1515/mms-2015-0014
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- Article
Barrier Detectors Versus Homojunction Photodiode.
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- Metrology & Measurement Systems, 2014, v. 21, n. 4, p. 675, doi. 10.2478/mms-2014-0058
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- Article
Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System.
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- Metrology & Measurement Systems, 2014, v. 21, n. 3, p. 461, doi. 10.2478/mms-2014-0039
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- Article
Analogy of transistor function with modulating photonic band gap in electromagnetically induced grating.
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- Scientific Reports, 2015, p. 13880, doi. 10.1038/srep13880
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- Article
Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS<sub>2</sub>/CuI P-I-N Photodiode Application.
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- Scientific Reports, 2015, p. 11377, doi. 10.1038/srep11377
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- Article
Switched photocurrent direction in Au/TiO<sub>2</sub> bilayer thin films.
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- Scientific Reports, 2015, p. 10852, doi. 10.1038/srep10852
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- Article
Achieving EQE of 16,700% in P3HT:PC<sub>71</sub>BM based photodetectors by trap-assisted photomultiplication.
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- Scientific Reports, 2015, p. 9181, doi. 10.1038/srep09181
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- Article
Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.
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- Scientific Reports, 2015, p. 7708, doi. 10.1038/srep07708
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- Article
Photodiode-Like Behavior and Excellent Photoresponse of Vertical Si/Monolayer MoS<sub>2</sub> Heterostructures.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep07186
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- Article
High-Precision Distribution of Highly Stable Optical Pulse Trains with 8.8 × 10<sup>-19</sup> instability.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep05109
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- Article
Single-photon property characterization of 1.3 mm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep03633
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- Article
Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02874
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- Article
Preparation and characterization of aluminum oxide nanoparticles by laser ablation in liquid as passivating and anti-reflection coating for silicon photodiodes.
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- Applied Nanoscience, 2017, v. 7, n. 7, p. 477, doi. 10.1007/s13204-017-0580-0
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- Article
Improvement of piezoelectrically induced PWP method and its comparison with the PEA method.
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- Electrical Engineering in Japan, 1997, v. 121, n. 2, p. 1, doi. 10.1002/(SICI)1520-6416(19971115)121:2<1::AID-EEJ1>3.0.CO;2-A
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- Article
Amplitude changes during ventricular fibrillation: a mechanistic insight.
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- Frontiers in Physiology, 2012, v. 3, p. 1, doi. 10.3389/fphys.2012.00147
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- Article