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A Novel Mechanism Based on Oxygen Vacancies to Describe Isobutylene and Ammonia Sensing of p-Type Cr 2 O 3 and Ti-Doped Cr 2 O 3 Thin Films.
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- Chemosensors, 2024, v. 12, n. 10, p. 218, doi. 10.3390/chemosensors12100218
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- Article
Three‐phase common‐ground‐type photovoltaic inverter without shoot‐through problem.
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- International Journal of Circuit Theory & Applications, 2024, v. 52, n. 10, p. 5252, doi. 10.1002/cta.4014
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- Article
Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-52929-8
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Simple Synthesis of Au-WO<sub>3</sub> Nanoparticles with Enhanced Photocatalytic Performance.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 4250, doi. 10.1007/s11664-024-11154-1
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The Combination of Nickel Oxide (NiO) and Molybdenum Trioxide (MoO<sub>3</sub>) for Pollutant Gas Detection.
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- Journal of Electronic Materials, 2023, v. 52, n. 3, p. 1840, doi. 10.1007/s11664-022-10130-x
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Improving Specific On-Resistance and Breakdown Voltage in SOI LDMOSs with Several N-Type Windows.
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- Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1366, doi. 10.1007/s11664-022-10115-w
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SiC Material in Si-LDMOS Transistors by Controlling Mismatching at Their Interfaces.
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- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4896, doi. 10.1007/s11664-022-09696-3
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Impact of Mole Fraction Variation on the Analog/RF Performance of Quaternary InAlGaN DG MOS-HEMTs.
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- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2608, doi. 10.1007/s11664-022-09533-7
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Design and Characterization of (Yb, Al, Cu, Au)/GeO<sub>2</sub>/C As MOS Field Effect Transistors, Negative Capacitance Effect Devices and Band Pass/Reject Filters Suitable for 4G Technologies.
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- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2510, doi. 10.1007/s11664-022-09514-w
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Electrical and Dielectric Properties of a Dy<sub>2</sub>O<sub>3</sub> MOS Capacitor.
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- Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1250, doi. 10.1007/s11664-021-09391-9
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- Article
Improve the Formaldehyde Gas-Sensing Performance of 3D Porous SnO<sub>2</sub> by Controlling the Calcination Time and the Amount of Holmium Doped.
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- Journal of Electronic Materials, 2022, v. 51, n. 1, p. 214, doi. 10.1007/s11664-021-09279-8
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Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT.
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- Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3569, doi. 10.1007/s11664-021-08845-4
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Low-Threshold II–VI Lattice-Matched SWS-FETs for Multivalued Low-Power Logic.
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- Journal of Electronic Materials, 2021, v. 50, n. 5, p. 2618, doi. 10.1007/s11664-021-08807-w
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Novel Dual-Metal Junctionless Nanotube Field-Effect Transistors for Improved Analog and Low-Noise Applications.
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- Journal of Electronic Materials, 2021, v. 50, n. 1, p. 108, doi. 10.1007/s11664-020-08541-9
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Physio-Chemical Properties and Dielectric Behavior of As-Grown Manganese Oxide (γ-Mn2O3) Nanoparticles.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4410, doi. 10.1007/s11664-020-08171-1
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A Lateral Double-Diffusion Metal Oxide Semiconductor Device with a Gradient Charge Compensation Layer.
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- Journal of Electronic Materials, 2019, v. 48, n. 12, p. 7970, doi. 10.1007/s11664-019-07579-8
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Iron Oxide Photoelectrode with Multidimensional Architecture for Highly Efficient Photoelectrochemical Water Splitting.
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- Angewandte Chemie, 2017, v. 129, n. 23, p. 6683, doi. 10.1002/ange.201703326
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Magnetic Field‐Assisted Control of Phase Composition and Texture in Photocatalytic Hematite Films.
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- Advanced Engineering Materials, 2019, v. 21, n. 8, p. N.PAG, doi. 10.1002/adem.201900195
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A CDM-ONLY REPRODUCIBLE FIELD DEGRADATION AND ITS RELIABILITY ASPECT.
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- Quality & Reliability Engineering International, 1994, v. 10, n. 4, p. 341, doi. 10.1002/qre.4680100415
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ANALYSIS OF MOS SOI TRANSISTOR DEGRADATION.
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- Quality & Reliability Engineering International, 1993, v. 9, n. 4, p. 353, doi. 10.1002/qre.4680090420
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MIL-HDBK-217 Update.
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- Quality & Reliability Engineering International, 1992, v. 8, n. 3, p. 309
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- Article
HOT CARRIER DEGRADATION IN MOSFETs IN THE TEMPERATURE RANGE OF 77-300 K.
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- Quality & Reliability Engineering International, 1991, v. 7, n. 4, p. 307, doi. 10.1002/qre.4680070418
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- Article
High-efficiency class-C power-amplifier module.
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- Microwave & Optical Technology Letters, 2004, v. 40, n. 2, p. 164, doi. 10.1002/mop.11317
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Self-heating-dependent thermal-noise model using a distributed-gate structure for RF applications.
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- Microwave & Optical Technology Letters, 2004, v. 40, n. 1, p. 87, doi. 10.1002/mop.11293
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Direct extraction technique for a small-signal MOSFET equivalent circuit with substrate parameters.
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- Microwave & Optical Technology Letters, 2003, v. 39, n. 4, p. 344, doi. 10.1002/mop.11210
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- Article
Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET.
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- Microwave & Optical Technology Letters, 2003, v. 37, n. 5, p. 366, doi. 10.1002/mop.10920
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- Article
A distributed network model of SOI MOSFET for microwave frequency applications.
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- Microwave & Optical Technology Letters, 2003, v. 37, n. 1, p. 26, doi. 10.1002/mop.10814
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An analysis of the kink phenomenon of scattering parameter S<sub>22</sub> in RF power mosfets for system-on-chip (SOC) applications.
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- Microwave & Optical Technology Letters, 2003, v. 36, n. 5, p. 371, doi. 10.1002/mop.10767
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Neural network based time domain modelling of 0.18 μm MOSFETs.
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- Microwave & Optical Technology Letters, 2002, v. 35, n. 3, p. 203, doi. 10.1002/mop.10558
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Large-signal modeling of frequency-dispersion effects in submicron MOSFET devices.
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- Microwave & Optical Technology Letters, 2002, v. 34, n. 6, p. 429, doi. 10.1002/mop.10485
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Miniaturized 20 GHz CPW quadrature coupler using capacitive loading.
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- Microwave & Optical Technology Letters, 2001, v. 30, n. 1, p. 3, doi. 10.1002/mop.1203
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Extraction of small-signal model parameters of silicon MOSFET for RF applications.
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- Microwave & Optical Technology Letters, 2000, v. 27, n. 5, p. 352, doi. 10.1002/1098-2760(20001205)27:5<352::AID-MOP18>3.0.CO;2-V
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Detection of plasma produced in the interaction between an Nd:YAG laser and a metal–nitride–oxide–semiconductor-type charge-coupled device.
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- Microwave & Optical Technology Letters, 1997, v. 16, n. 3, p. 160, doi. 10.1002/(SICI)1098-2760(19971020)16:3<160::AID-MOP10>3.0.CO;2-9
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MEASUREMENT OF THRESHOLDS OF DAMAGE TO A CHARGE-COUPLED DEVICE CAUSED BY A Q-SWITCHED LASER.
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- Microwave & Optical Technology Letters, 1996, v. 11, n. 4, p. 194, doi. 10.1002/(SICI)1098-2760(199603)11:4<194::AID-MOP8>3.0.CO;2-F
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Dark current in an active pixel complementary metal-oxide-semiconductor sensor.
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- Journal of Electronic Imaging, 2011, v. 20, n. 1, p. 013005, doi. 10.1117/1.3533328
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Localization capability and limitation of electron-multiplying charge-coupled, scientific complementary metal-oxide semiconductor, and charge-coupled devices for superresolution imaging.
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- Journal of Biomedical Optics, 2010, v. 15, n. 6, p. 066005, doi. 10.1117/1.3505017
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Comparison of phase-shifting techniques for in vivofull-range, high-speed Fourier-domain optical coherence tomography.
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- Journal of Biomedical Optics, 2010, v. 15, n. 5, p. 056011, doi. 10.1117/1.3494556
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Synthesis, characterization, and application of polypyrrole/TiO<sub>2</sub> composites in photocatalytic processes: A review.
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- Polymers & Polymer Composites, 2021, v. 29, n. 7, p. 1055, doi. 10.1177/0967391120949489
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Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 10, p. 1092, doi. 10.1049/mnl.2019.0055
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Two-stage op-amp and integrator realisation through GaAsP/AlGaSb nanowire CP-TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 9, p. 980, doi. 10.1049/mnl.2018.5675
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Investigation of RF and linearity performance of electrode work-function engineered HDB vertical TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 1, p. 17, doi. 10.1049/mnl.2018.530
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Negative bias temperature instability in SOI-like p-type metal oxide semiconductor devices.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 8, p. 1151, doi. 10.1049/mnl.2018.0012
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Double trenches LDMOS with trapezoidal gate.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 5, p. 695, doi. 10.1049/mnl.2017.0532
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PSOI pLDMOS with n-buried layer.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 10, p. 726, doi. 10.1049/mnl.2017.0169
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On-resistance reduction in vertical double diffusion metal oxide semiconductor devices using stress applied by thin film.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 5, p. 275, doi. 10.1049/mnl.2016.0320
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Performance and electrical characteristics of hybrid carbon nanotube field effect transistors.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 9, p. 476, doi. 10.1049/mnl.2016.0241
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New folding lateral double diffused metal oxide semiconductor breaking silicon limit with ultra-low specific on-resistance.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 2, p. 99, doi. 10.1049/mnl.2015.0413
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Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs.
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- Micro & Nano Letters (Wiley-Blackwell), 2014, v. 9, n. 2, p. 123, doi. 10.1049/mnl.2013.0553
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3D ZnO/ZIF‐8 Hierarchical Nanostructure for Sensitive and Selective NO<sub>2</sub> Sensing at Room Temperature.
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- Small Structures, 2024, v. 5, n. 4, p. 1, doi. 10.1002/sstr.202300503
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Resonant tunnelling into the two-dimensional subbands of InSe layers.
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- Communications Physics, 2020, v. 3, n. 1, p. 1, doi. 10.1038/s42005-020-0290-x
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