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Selective Area Epitaxy of InP/GaInP<sub>2</sub>Quantum Dots from Metal-Organic Compounds.
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- Semiconductors, 2024, v. 58, n. 2, p. 187, doi. 10.1134/S1063782624020167
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Magnetic Properties of Co: TiO<sub>2</sub> Thin Films with Low Cobalt Concentration.
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- Pertanika Journal of Social Sciences & Humanities, 2017, v. 25S, p. 57
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- Article
Smart Metal‐Organic Frameworks (MOFs): Switching Gas Permeation through MOF Membranes by External Stimuli.
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- Chemical Engineering & Technology, 2018, v. 41, n. 2, p. 224, doi. 10.1002/ceat.201700635
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A Metal–Organic Framework with Cooperative Phosphines That Permit Post‐Synthetic Installation of Open Metal Sites.
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- Angewandte Chemie, 2018, v. 130, n. 30, p. 9439, doi. 10.1002/ange.201802402
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Star PolyMOCs with Diverse Structures, Dynamics, and Functions by Three-Component Assembly.
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- Angewandte Chemie, 2017, v. 129, n. 1, p. 194, doi. 10.1002/ange.201609261
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Morphological and Structural Evolutions of Metal-Organic Framework Particles from Amorphous Spheres to Crystalline Hexagonal Rods.
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- Angewandte Chemie, 2015, v. 127, n. 36, p. 10710, doi. 10.1002/ange.201504873
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Superprotonic Conductivity of a UiO-66 Framework Functionalized with Sulfonic Acid Groups by Facile Postsynthetic Oxidation.
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- Angewandte Chemie, 2015, v. 127, n. 17, p. 5231, doi. 10.1002/ange.201411703
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- Article
Influence of substrate temperature on the optical properties of Sb-doped ZnO films prepared by MOCVD.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 3, p. 2602, doi. 10.1007/s10854-016-5836-z
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- Article
Effect of VI/II gas ratio on the properties of MOCVD grown ZnO nanostructures.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1756, doi. 10.1007/s10854-016-5722-8
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- Article
Stable self-polarization in Nd and Ti codoped BiFeO films.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 2233, doi. 10.1007/s10854-016-5793-6
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- Article
High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 745, doi. 10.1007/s10854-016-5585-z
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- Article
Assessment of refractive index changes by spectral reflectance in the first stages of AlGaN layer growth using SiN treatment.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 6, p. 6336, doi. 10.1007/s10854-016-4568-4
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Structural investigation of AlInN/AlN/GaN heterostructures.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2852, doi. 10.1007/s10854-015-4101-1
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- Article
Effects of AlN buffer on the physical properties of GaN films grown on 6H-SiC substrates.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 1738, doi. 10.1007/s10854-015-3948-5
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Characterization of tunable band gap aluminum indium oxide films prepared on SiO (0001) by MOCVD.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 599, doi. 10.1007/s10854-015-3794-5
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Characterization of Sn-doped β-GaO films deposited on MgO (100) substrate by MOCVD.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 10, p. 7889, doi. 10.1007/s10854-015-3440-2
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Electromagnetic and microwave absorption properties of carbon fibers coated with carbonyl iron.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6518, doi. 10.1007/s10854-015-3247-1
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Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 3, p. 1591, doi. 10.1007/s10854-014-2580-0
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Epitaxial growth and optical characterization of AlInGaN quaternary alloys with high Al/In mole ratio.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 705, doi. 10.1007/s10854-014-2453-6
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Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4200, doi. 10.1007/s10854-014-2149-y
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The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4268, doi. 10.1007/s10854-014-2159-9
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Growth characteristics and device properties of MOD derived β-GaO films.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3629, doi. 10.1007/s10854-014-2066-0
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Indium rich InGaN solar cells grown by MOCVD.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3652, doi. 10.1007/s10854-014-2070-4
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Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 267, doi. 10.1007/s10854-013-1582-7
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Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate.
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- Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4471, doi. 10.1007/s10854-013-1427-4
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Improved quality of GaN epilayer grown on porous SiC substrate by in situ H pre-treatment.
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- Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 9, p. 3299, doi. 10.1007/s10854-013-1246-7
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Large and uniform piezoresponse of BiFeWO thin film annealed at 450 °C.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1864, doi. 10.1007/s10854-012-0675-z
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Influence of thin platinum layer on the magnetic properties of multiple layers of CVD cobalt thin films.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1881, doi. 10.1007/s10854-012-0678-9
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Characterization of IrO/CNT nanocomposites.
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- Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 890, doi. 10.1007/s10854-010-0231-7
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Raman spectroscopy study of the phase transformation on nanocrystalline titania films prepared via metal organic vapour deposition.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 303, doi. 10.1007/s10854-008-9595-3
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Growth and characterization of well-aligned rutile TiO<sub>2</sub> nanocrystals on sapphire substrates via metal organic vapour deposition.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 332, doi. 10.1007/s10854-008-9611-7
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- Article
Effect of β-irradiation on photoluminescence of MOCVD grown GaN.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 14, doi. 10.1007/s10854-008-9587-3
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Study of in-depth strain variation in ion-irradiated GaN.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 68, doi. 10.1007/s10854-007-9540-x
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Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 107, doi. 10.1007/s10854-007-9556-2
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The application of a statistical methodology to investigate deposition parameters in CdTe/CdS solar cells grown by MOCVD.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 7, p. 639, doi. 10.1007/s10854-007-9412-4
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- Article
Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 471, doi. 10.1007/s10854-007-9365-7
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In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 137, doi. 10.1007/s10854-007-9306-5
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Dislocations at the interface between sapphire and GaN.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 143, doi. 10.1007/s10854-007-9307-4
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Effect of doping on properties of Zno:Cu and Zno:Ag thin films.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 11, p. 1115, doi. 10.1007/s10854-007-9256-y
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Conformal growth and characterization of hafnium silicate thin film by MOCVD using HTB (hafnium tertra-tert-butoxide) and TDEAS (tetrakis-diethylamino silane).
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 4, p. 391, doi. 10.1007/s10854-006-9050-2
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Low temperature growth of ZnO thin film on Si(100) substrates by metal organic chemical vapor deposition.
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- Journal of Materials Science Letters, 2003, v. 22, n. 15, p. 1117, doi. 10.1023/A:1024955412422
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- Article
Strain-Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer.
- Published in:
- Strain, 2011, v. 47, p. 19, doi. 10.1111/j.1475-1305.2009.00730.x
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GaN Thin Films Deposited on n-Si (111) Substrate with a Metal Organic Chemical Vapor Deposition System for Sensing Ultraviolet Light.
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- Sensors & Materials, 2016, v. 28, n. 6, p. 689, doi. 10.18494/sam.2016.1334
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MOVPE Technology of Fe-Compensated InP Layers for the Quantum Cascade Laser Applications.
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- International Journal of Electronics & Telecommunications, 2020, v. 66, n. 2, p. 389, doi. 10.24425/ijet.2020.131890
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- Article
AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell.
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- International Journal of Electronics & Telecommunications, 2014, v. 60, n. 2, p. 151, doi. 10.2478/eletel-2014-0018
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- Article
Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.
- Published in:
- Scientific Reports, 2015, p. 16612, doi. 10.1038/srep16612
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Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition.
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- Scientific Reports, 2015, p. 10808, doi. 10.1038/srep10808
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Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen.
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- Scientific Reports, 2015, p. 9703, doi. 10.1038/srep09703
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- Article
Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes.
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- Scientific Reports, 2015, p. 7747, doi. 10.1038/srep07747
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Detection of Volatile Organic Compounds by Weight-Detectable Sensors coated with Metal-Organic Frameworks.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep06247
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