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Analysis of III–V Heterojunction TFET for High-Frequency Analog Applications.
- Published in:
- Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5468, doi. 10.1007/s11664-024-11261-z
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- Article
Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge.
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- Journal of Electronic Materials, 2023, v. 52, n. 8, p. 5150, doi. 10.1007/s11664-023-10502-x
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- Article
Prediction of Shockley-Read-Hall Centers in Strained Layer Superlattices for Mid-Wave Infrared Photodetectors.
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- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4695, doi. 10.1007/s11664-022-09741-1
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- Article
Bandgap Engineering and Short-Wavelength Infrared Detection of InGaAs/GaAsSb Superlattices Lattice-Matched to InP.
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- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4703, doi. 10.1007/s11664-022-09745-x
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- Article
Correction to: Effect of Polymer Capping Layer on III-V Materials: Disorder's Control in P3HT/BGaAs/GaAs Heterostructure.
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- 2022
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- Publication type:
- Correction Notice
Effect of Polymer Capping Layer on III-V Materials: Disorder's Control in P3HT/BGaAs/GaAs Heterostructure.
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- Journal of Electronic Materials, 2022, v. 51, n. 7, p. 3521, doi. 10.1007/s11664-022-09504-y
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- Article
Design, Fabrication, and Characteristic Analysis of 64 × 64 InGaAs/InP Single-Photon Avalanche Diode Array.
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- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2692, doi. 10.1007/s11664-022-09531-9
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- Article
The Influence of Growth Parameters of Strain InGaAs Quantum Wells on Luminescent Properties.
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- Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1421, doi. 10.1007/s11664-021-09394-6
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- Article
Interfacial X-ray photospectrometry study of In<sub>0.53</sub>Ga<sub>0.47</sub>As under different passivation treatments for metal oxide semiconductor field effect transistor devices.
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- Micro & Nano Letters (Wiley-Blackwell), 2013, v. 8, n. 11, p. 836, doi. 10.1049/mnl.2013.0560
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- Article
Excitons in InGaAs quantum dots without electron wetting layer states.
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- Communications Physics, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42005-019-0194-9
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- Article
Near‐Infrared Image Analysis as Tool for Monitoring Process Activities.
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- ChemBioEng Reviews, 2018, v. 5, n. 5, p. 334, doi. 10.1002/cben.201800013
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- Publication type:
- Article
Optical Detection of the Cyclotron Resonance in Inhomogeneous Ferromagnetic Structures InGaAs/GaAs/δ-〈Mn〉.
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- JETP Letters, 2022, v. 116, n. 4, p. 232, doi. 10.1134/S002136402260135X
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- Article
High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-11946-7
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- Article
Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-09136-6
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- Article
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05721-x
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- Article
Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-01446-5
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- Article
Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser.
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- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33528-x
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- Article
Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs.
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- Micromachines, 2023, v. 14, n. 11, p. 2073, doi. 10.3390/mi14112073
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- Article
A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P + -Pocket and InAlAs-Block.
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- Micromachines, 2023, v. 14, n. 11, p. 2049, doi. 10.3390/mi14112049
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- Article
A New Analytical Large-Signal Model for Quasi-Ballistic Transport in InGaAs HEMTs Accommodating Dislocation Scattering.
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- Micromachines, 2023, v. 14, n. 5, p. 1023, doi. 10.3390/mi14051023
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- Publication type:
- Article
Free-Running Single-Photon Detection via GHz Gated InGaAs/InP APD for High Time Resolution and Count Rate up to 500 Mcount/s.
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- Micromachines, 2023, v. 14, n. 2, p. 437, doi. 10.3390/mi14020437
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- Article
Adhesion Evaluation of an Embedded SiN/GaAs Interface Using a Novel "Push-Out" Technique.
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- Micromachines, 2023, v. 14, n. 1, p. 37, doi. 10.3390/mi14010037
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- Article
Suppression of the Electrical Crosstalk of Planar-Type High-Density InGaAs Detectors with a Guard Hole.
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- Micromachines, 2022, v. 13, n. 10, p. 1797, doi. 10.3390/mi13101797
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- Article
Developing a Real-Time Working Method That Improves Process Efficiency in High-Power Fiber Laser Systems.
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- Micromachines, 2022, v. 13, n. 9, p. 1552, doi. 10.3390/mi13091552
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- Article
The Impact of Manufacturing Imperfections on the Performance of Metalenses and a Manufacturing-Tolerant Design Method.
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- Micromachines, 2022, v. 13, n. 9, p. 1531, doi. 10.3390/mi13091531
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- Article
A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.
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- Micromachines, 2022, v. 13, n. 9, p. 1474, doi. 10.3390/mi13091474
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- Publication type:
- Article
Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review.
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- Micromachines, 2020, v. 11, n. 8, p. 750, doi. 10.3390/mi11080750
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- Article
Miniature Broadband NIR Spectrometer Based on FR4 Electromagnetic Scanning Micro-Grating.
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- Micromachines, 2020, v. 11, n. 4, p. 393, doi. 10.3390/mi11040393
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- Article
Molecule Sensitive Optical Imaging and Monitoring Techniques—A Review of Applications in Micro-Process Engineering.
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- Micromachines, 2020, v. 11, n. 4, p. 353, doi. 10.3390/mi11040353
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- Article
The effect of temperature, hydrostatic pressure and magnetic field on the nonlinear optical properties of AlGaAs/GaAs semi-parabolic quantum well.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 27, p. N.PAG, doi. 10.1142/S0217979219503259
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- Article
The electrical current characteristics of thermally annealed Co/anodic oxide layer/n-GaAs sandwich structures.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 21, p. N.PAG, doi. 10.1142/S0217979219502321
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- Article
Plasmon modes in graphene — GaAs heterostructures at finite temperature.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 16, p. N.PAG, doi. 10.1142/S0217979219501741
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- Article
The electron-longitudinal optical phonon scattering rate in GaInAsP/InP stepped quantum well.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 26, p. 1, doi. 10.1142/S0217979216501964
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- Article
Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 22, p. -1, doi. 10.1142/S0217979216501393
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- Article
Simulation of -factor, bandgap frequency and defect band structure dependence upon hole radius of air formed in InGaAs waveguides.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 21, p. -1, doi. 10.1142/S0217979216501447
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- Article
Evaluating the effects of nonlinear optical gain and thermal carrier escape on the performance of InGaAs/GaAs self-assembled quantum dot lasers.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 19, p. -1, doi. 10.1142/S0217979216501216
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- Article
Optical Properties of InGaAs/GaAs Surface Quantum Dots Regulated by Introducing a Si Doped Interlayer.
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- Journal of Synthetic Crystals, 2023, v. 52, n. 1, p. 73
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- Publication type:
- Article
2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate.
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- Journal of Nanomaterials, 2016, p. 1, doi. 10.1155/2016/8393502
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- Publication type:
- Article
Unraveling the Gain Mechanism in High Performance Solution-Processed PbS Infrared PIN Photodiodes.
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 8, p. 1233, doi. 10.1002/adfm.201403673
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- Article
Facile Fabrication of PbS Nanocrystal:C<sub>60</sub> Fullerite Broadband Photodetectors with High Detectivity.
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- Advanced Functional Materials, 2013, v. 23, n. 33, p. 4149, doi. 10.1002/adfm.201202818
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- Article
Aquiring High-Quality Microscopic Images Through Silicon Without Damaging the Finished Product.
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- Microscopy & Microanalysis, 2019, p. 1138, doi. 10.1017/S1431927618006177
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- Article
Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography.
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- Microscopy & Microanalysis, 2019, p. 398, doi. 10.1017/S1431927618002489
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- Article
Effects of topically administered 0.6% hyaluronic acid on the healing of labial frenectomy in conventional and 940-nm indium gallium arsenide phosphide (InGaAsP) diode laser techniques in pediatric patients: a randomized, placebo-controlled clinical study
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- Lasers in Medical Science, 2024, v. 39, n. 1, p. 1, doi. 10.1007/s10103-024-03983-7
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- Article
Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review).
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- Applied Solar Energy (19349424), 2019, v. 55, n. 5, p. 291, doi. 10.3103/S0003701X1905013X
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- Article
Determination of a High-Power THz Detector for EA-FEL Radiation Using Optical Sampling of GaAs and ZnTe Crystals.
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- Designs, 2022, v. 6, n. 6, p. 109, doi. 10.3390/designs6060109
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- Article
Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300437
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- Article
Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate (Adv. Electron. Mater. 11/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370050
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- Article
Comparative Study of the Two-Dimensional Plasma Excitations in the Heterostructures ZnO/MgZnO, AlAs/AlGaAs, and GaAs/AlGaAs.
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- Journal of Experimental & Theoretical Physics, 2020, v. 130, n. 4, p. 594, doi. 10.1134/S1063776120020053
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- Article
Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures.
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- Journal of Experimental & Theoretical Physics, 2013, v. 117, n. 1, p. 144, doi. 10.1134/S1063776113080116
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- Article
Analytic description of nanowires II: morphing of regular cross sections for zincblende‐ and diamond‐structures to match arbitrary shapes.
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- Acta Crystallographica Section B: Structural Science, Crystal Engineering & Materials, 2022, v. 78, n. 4, p. 643, doi. 10.1107/S2052520622004942
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- Article