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Berichtigung: Nanoscale Control of Homoepitaxial Growth on a Two‐Dimensional Zeolite.
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- 2018
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- Publication type:
- Correction Notice
Nanoscale Control of Homoepitaxial Growth on a Two-Dimensional Zeolite.
- Published in:
- Angewandte Chemie, 2017, v. 129, n. 2, p. 550, doi. 10.1002/ange.201607063
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- Publication type:
- Article
Drift of adatoms on the (111) silicon surface under electromigration conditions.
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- JETP Letters, 2011, v. 94, n. 2, p. 147, doi. 10.1134/S0021364011140128
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- Publication type:
- Article
Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films.
- Published in:
- Scientific Reports, 2015, p. 16334, doi. 10.1038/srep16334
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- Publication type:
- Article
ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.
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- Scientific Reports, 2015, p. 11499, doi. 10.1038/srep11499
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- Publication type:
- Article
Growth of Bulk Gallium Nitride Single Crystal by Sodium Flux Method: A Brief Review.
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- Journal of Physical Science, 2019, v. 30, n. 2, p. 189, doi. 10.21315/jps2019.30.2.11
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- Publication type:
- Article
Solution‐Processed Selective Area Homoepitaxial Growth of Suspended MAPbX<sub>3</sub> (X = Cl, Br) Perovskite Micro‐Arrays.
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- Advanced Functional Materials, 2023, v. 33, n. 4, p. 1, doi. 10.1002/adfm.202208841
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- Publication type:
- Article
Optical Properties of GGG Epitaxial Films Grown from PbO-B<sub>2</sub>O<sub>3</sub>-V<sub>2</sub>O<sub>5</sub> Flux.
- Published in:
- Acta Physica Polonica: A, 2018, v. 133, n. 4, p. 954, doi. 10.12693/APhysPolA.133.954
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- Publication type:
- Article
Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates.
- Published in:
- 2012
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- Publication type:
- Proceeding
Molecular dynamics simulation of surface morphology during homoepitaxial growth of Copper.
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- European Physical Journal - Applied Physics, 2019, v. 87, n. 3, p. 1, doi. 10.1051/epjap/2019190080
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- Publication type:
- Article
Growth of Si on Si(1 1 1)-7×7 at room temperature under laser substrate excitation.
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- European Physical Journal - Applied Physics, 2015, v. 69, n. 1, p. 10301-p1, doi. 10.1051/epjap/2014140126
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- Publication type:
- Article
GaAs p- i- n structures for X-ray detectors grown on Ge and GaAs substrates.
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- Technical Physics Letters, 2012, v. 38, n. 5, p. 399, doi. 10.1134/S1063785012050161
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- Publication type:
- Article
Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates.
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- Technical Physics Letters, 2012, v. 38, n. 5, p. 412, doi. 10.1134/S1063785012050082
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- Publication type:
- Article
The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers.
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- Crystals (2073-4352), 2023, v. 13, n. 6, p. 935, doi. 10.3390/cryst13060935
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- Publication type:
- Article
A Review of Homoepitaxy of III-Nitride Semiconductors by Metal Organic Chemical Vapor Deposition and the Effects on Vertical Devices.
- Published in:
- Crystals (2073-4352), 2023, v. 13, n. 3, p. 387, doi. 10.3390/cryst13030387
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- Publication type:
- Article
Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates.
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- Crystals (2073-4352), 2023, v. 13, n. 1, p. 62, doi. 10.3390/cryst13010062
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- Publication type:
- Article
Multifunctional Pd/MOFs@MOFs Confined Core‐Shell Catalysts with Wrinkled Surface for Selective Catalysis.
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- Chemistry - An Asian Journal, 2021, v. 16, n. 22, p. 3743, doi. 10.1002/asia.202100922
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- Publication type:
- Article
In Situ Observations of Templated Grain Growth in ( Na<sub>0.5</sub> K<sub>0.5</sub>)<sub>0.98</sub> Li<sub>0.02</sub> NbO<sub>3</sub> Piezoceramics: Texture Development and Template-Matrix Interactions.
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- Journal of the American Ceramic Society, 2012, v. 95, n. 8, p. 2653, doi. 10.1111/j.1551-2916.2012.05268.x
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- Publication type:
- Article
Nanoscale Control of Homoepitaxial Growth on a Two-Dimensional Zeolite.
- Published in:
- Angewandte Chemie International Edition, 2017, v. 56, n. 2, p. 535, doi. 10.1002/anie.201607063
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- Publication type:
- Article
Cover Picture: Nanoscale Control of Homoepitaxial Growth on a Two-Dimensional Zeolite (Angew. Chem. Int. Ed. 2/2017).
- Published in:
- Angewandte Chemie International Edition, 2017, v. 56, n. 2, p. 419, doi. 10.1002/anie.201611986
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- Publication type:
- Article
Chemical Cross-linking of Polypropylenes Towards New Shape Memory Polymers.
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- Macromolecular Rapid Communications, 2015, v. 36, n. 8, p. 744, doi. 10.1002/marc.201400727
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- Publication type:
- Article
Diamond Diode Structures Based on Homoepitaxial Films.
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- Journal of Communications Technology & Electronics, 2018, v. 63, n. 7, p. 828, doi. 10.1134/S1064226918070148
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- Publication type:
- Article
Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 24, p. 1, doi. 10.1002/pssa.202000465
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- Publication type:
- Article
High Crystallinity and Highly Relaxed Al<sub>0.60</sub>Ga<sub>0.40</sub>N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 14, p. 1, doi. 10.1002/pssa.201900868
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- Publication type:
- Article
Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019).
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 4, p. N.PAG, doi. 10.1002/pssa.201970019
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- Publication type:
- Article
Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 4, p. N.PAG, doi. 10.1002/pssa.201800652
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- Publication type:
- Article
Homoepitaxial Diamond Structures with Incorporated SiV Centers.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 22, p. N.PAG, doi. 10.1002/pssa.201800371
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- Publication type:
- Article
Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 11, p. 2365, doi. 10.1002/pssa.201532449
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- Publication type:
- Article
Free exciton luminescence from a diamond p-i-n diode grown on a substrate produced by heteroepitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 10, p. 2251, doi. 10.1002/pssa.201431167
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- Publication type:
- Article
Improvement of dislocation density in thick CVD single crystal diamond films by coupling H<sub>2</sub>/O<sub>2</sub> plasma etching and chemo-mechanical or ICP treatment of HPHT substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 10, p. 2264, doi. 10.1002/pssa.201431181
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- Publication type:
- Article
Homoepitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub> layers by metal-organic vapor phase epitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 27, doi. 10.1002/pssa.201330092
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- Publication type:
- Article
Semiconducting Sn-doped β-GaO homoepitaxial layers grown by metal organic vapour-phase epitaxy.
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- Journal of Materials Science, 2016, v. 51, n. 7, p. 3650, doi. 10.1007/s10853-015-9693-6
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- Publication type:
- Article
Preparation and characterization of Sn-doped β-GaO homoepitaxial films by MOCVD.
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- Journal of Materials Science, 2015, v. 50, n. 8, p. 3252, doi. 10.1007/s10853-015-8893-4
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- Publication type:
- Article
Metal‐Oxide Transistors: Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In<sub>2</sub>O<sub>3</sub> Transistors (Adv. Electron. Mater. 11/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000354
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- Publication type:
- Article
Coating Thickness Controls Crystallinity and Enables Homoepitaxial Growth of Ultra‐Thin‐Channel Blade‐Coated In<sub>2</sub>O<sub>3</sub> Transistors.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000354
- By:
- Publication type:
- Article
Homoepitaxial Nanostructures of Zinc Oxide.
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- Journal of Nanomaterials, 2015, p. 1, doi. 10.1155/2015/872793
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- Publication type:
- Article
Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2014, v. 43, n. 4, p. 926, doi. 10.1007/s11664-014-3070-0
- By:
- Publication type:
- Article
Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching.
- Published in:
- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 794, doi. 10.1007/s11664-013-2527-x
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- Publication type:
- Article
Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.
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- Materials (1996-1944), 2022, v. 15, n. 10, p. 3594, doi. 10.3390/ma15103594
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- Publication type:
- Article
Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages.
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- Materials (1996-1944), 2021, v. 14, n. 20, p. 5964, doi. 10.3390/ma14205964
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- Publication type:
- Article
Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals.
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- Materials (1996-1944), 2020, v. 13, n. 8, p. 1978, doi. 10.3390/ma13081978
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- Publication type:
- Article
Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System.
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- Materials (1996-1944), 2019, v. 12, n. 23, p. 3953, doi. 10.3390/ma12233953
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- Publication type:
- Article
Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers.
- Published in:
- Materials (1996-1944), 2016, v. 9, n. 9, p. 743, doi. 10.3390/ma9090743
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- Publication type:
- Article
Ultrathin DDR Films with Exceptionally High CO<sub>2</sub> Flux and Uniformly Adjustable Orientations.
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 18, p. 1, doi. 10.1002/adfm.202112427
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- Publication type:
- Article
Exploring the use of switchback for mitigating homoepitaxial unidirectional grain growth and porosity in WAAM of aluminium alloys.
- Published in:
- International Journal of Advanced Manufacturing Technology, 2019, v. 104, n. 1-4, p. 1581, doi. 10.1007/s00170-019-03959-w
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- Publication type:
- Article
Stress control by micropits density variation in strained AlGaN/GaN/SiN/AlN/Si(111) heterostructures.
- Published in:
- Crystal Research & Technology, 2016, v. 51, n. 3, p. 225, doi. 10.1002/crat.201500276
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- Publication type:
- Article
Smart-cut-like laser slicing of GaN substrate using its own nitrogen.
- Published in:
- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-97159-w
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- Publication type:
- Article
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study.
- Published in:
- Crystals (2073-4352), 2020, v. 10, n. 2, p. 57, doi. 10.3390/cryst10020057
- By:
- Publication type:
- Article
Hydrothermal Crystal Growth of Piezoelectric α-Quartz Phase of AO<sub>2</sub> (A = Ge, Si) and MXO<sub>4</sub> (M = Al, Ga, Fe and X = P, As): A Historical Overview.
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- Crystals (2073-4352), 2017, v. 7, n. 2, p. 38, doi. 10.3390/cryst7020038
- By:
- Publication type:
- Article
Stable Electron Concentration Si-doped β-Ga 2 O 3 Films Homoepitaxial Growth by MOCVD.
- Published in:
- Coatings (2079-6412), 2021, v. 11, n. 5, p. 589, doi. 10.3390/coatings11050589
- By:
- Publication type:
- Article