Found: 55
Select item for more details and to access through your institution.
High‐efficiency balanced power amplifier using miniaturized harmonics suppressed coupler.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 8, p. 1, doi. 10.1002/mmce.22252
- By:
- Publication type:
- Article
Neuro-space mapping modeling approach for trapping and self-heating effects on GaAs and GaN devices.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2017, v. 27, n. 6, p. n/a, doi. 10.1002/mmce.21106
- By:
- Publication type:
- Article
Low phase-noise X-band oscillator based on elliptic filter and branchline coupler.
- Published in:
- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2019, v. 13, n. 7, p. 888, doi. 10.1049/iet-map.2018.5336
- By:
- Publication type:
- Article
Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer.
- Published in:
- Scientific Reports, 2015, p. 7860, doi. 10.1038/srep07860
- By:
- Publication type:
- Article
Room temperature electrical spin injection into GaAs by an oxide spin injector.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep05588
- By:
- Publication type:
- Article
A Two-stages Microstrip Power Amplifier for WiMAX Applications.
- Published in:
- Telkomnika, 2018, v. 16, n. 6, p. 2500, doi. 10.12928/TELKOMNIKA.v16i6.9338
- By:
- Publication type:
- Article
A 1.9- GHz silicon-on-insulator CMOS stacked- FET power amplifier with uniformly distributed voltage stresses.
- Published in:
- International Journal of Circuit Theory & Applications, 2017, v. 45, n. 11, p. 1660, doi. 10.1002/cta.2325
- By:
- Publication type:
- Article
Microstrip Power Amplifier Design for ISM Band Using Balanced Amplifier Topology.
- Published in:
- International Journal of Microwave & Optical Technology, 2020, v. 15, n. 4, p. 289
- By:
- Publication type:
- Article
The Economics of GaAs and CMOS PAs: Crunch Time.
- Published in:
- Microwave Journal, 2013, p. 4
- By:
- Publication type:
- Article
A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling.
- Published in:
- Micromachines, 2020, v. 11, n. 9, p. 831, doi. 10.3390/mi11090831
- By:
- Publication type:
- Article
Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction.
- Published in:
- Journal of Synchrotron Radiation, 2015, v. 22, n. 1, p. 67, doi. 10.1107/S1600577514023480
- By:
- Publication type:
- Article
Electric field effects on exciton in the shape of transmission spectra in high-purity GaAs at room temperature.
- Published in:
- Optical & Quantum Electronics, 2015, v. 47, n. 2, p. 203, doi. 10.1007/s11082-014-9901-7
- By:
- Publication type:
- Article
Wafer design of widely tunable vertical-external-cavity surface-emitting laser with broadband gain spectrum.
- Published in:
- Optical & Quantum Electronics, 2015, v. 47, n. 2, p. 423, doi. 10.1007/s11082-014-9924-0
- By:
- Publication type:
- Article
InGaP//GaAs//CIGS 3-junction spectrum-splitting solar cells with low-concentration ratio.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 6, p. 1535, doi. 10.1002/pssa.201532811
- By:
- Publication type:
- Article
Pre-emphasis enabled 50 Gbit/s transmission over 1000 m SMF using a 1060 nm single-mode VCSEL.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 20, p. 1186, doi. 10.1049/el.2018.6170
- By:
- Publication type:
- Article
340 GHz lens-coupled 4 × 4 GaAs detector array for terahertz imaging applications.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 20, p. 1180, doi. 10.1049/el.2018.5856
- By:
- Publication type:
- Article
Enhancing performance of a InGaP/GaAs VCO by means of a switching architecture.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 11, p. 695, doi. 10.1049/el.2018.0965
- By:
- Publication type:
- Article
Memory characteristics of capacitors with poly-GaAs floating gates.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 11, p. 963, doi. 10.1049/el.2015.3823
- By:
- Publication type:
- Article
Terahertz wireless communication using GaAs transistors as detectors.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 4, p. 323, doi. 10.1049/el.2013.3702
- By:
- Publication type:
- Article
1/f2 spectra of decoherence noise on 75As nuclear spins in bulk GaAs.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-67636-9
- By:
- Publication type:
- Article
Effect of Mobility on (I-V) Characteristics of Gaas MESFET.
- Published in:
- International Journal of Electrical & Computer Engineering (2088-8708), 2017, v. 7, n. 1, p. 169, doi. 10.11591/ijece.v7i1.pp169-175
- By:
- Publication type:
- Article
A 2.1 to 4.6 GHz Wideband Low Noise Amplifier Using ATF10136.
- Published in:
- International Journal of Microwave & Optical Technology, 2013, v. 8, n. 1, p. 6
- By:
- Publication type:
- Article
Generation and Detection of Terahertz Waves Using Low-Temperature-Grown GaAs with an Annealing Process.
- Published in:
- ETRI Journal, 2014, v. 36, n. 1, p. 159, doi. 10.4218/etrij.14.0213.0319
- By:
- Publication type:
- Article
Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.
- Published in:
- Crystallography Reports, 2017, v. 62, n. 6, p. 947, doi. 10.1134/S1063774517060104
- By:
- Publication type:
- Article
Electrical and structural characteristics of metamorphic In<sub>0.38</sub>Al<sub>0.62</sub>As/In<sub>0.37</sub>Ga<sub>0.63</sub>As/In<sub>0.38</sub>Al<sub>0.62</sub>As HEMT nanoheterostructures.
- Published in:
- Crystallography Reports, 2013, v. 58, n. 6, p. 914, doi. 10.1134/S1063774513060114
- By:
- Publication type:
- Article
Output Stages of Operational Amplifiers Based on Gallium Arsenide NJFET and Bipolar PNP Transistors.
- Published in:
- IUP Journal of Electrical & Electronics Engineering, 2023, v. 16, n. 2, p. 25
- By:
- Publication type:
- Article
Design Features of Op-Amp Based on Bipolar Transistors for Anti-Aliasing Active LPF with a Low Systematic Component of Zero Offset Voltage.
- Published in:
- IUP Journal of Electrical & Electronics Engineering, 2022, v. 15, n. 3, p. 24
- By:
- Publication type:
- Article
Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT transistor.
- Published in:
- Journal of Engineering (17264073), 2021, v. 27, n. 2, p. 13, doi. 10.31026/j.eng.2021.02.02
- By:
- Publication type:
- Article
Adhesive bonding for mechanically stacked solar cells.
- Published in:
- Progress in Photovoltaics, 2015, v. 23, n. 9, p. 1080, doi. 10.1002/pip.2517
- By:
- Publication type:
- Article
Simultaneous effects of pressure and temperature on excitons in Pöschl-Teller quantum well.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500503
- By:
- Publication type:
- Article
Microdisk Injection Lasers for the 1.27-μm Spectral Range.
- Published in:
- Semiconductors, 2016, v. 50, n. 3, p. 390, doi. 10.1134/S1063782616030131
- By:
- Publication type:
- Article
Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction.
- Published in:
- Semiconductors, 2014, v. 48, n. 5, p. 584, doi. 10.1134/S1063782614050248
- By:
- Publication type:
- Article
Photoluminescence studies of InAlAs/InGaAs/InAlAs metamorphic heterostructures on GaAs substrates.
- Published in:
- Semiconductors, 2014, v. 48, n. 5, p. 640, doi. 10.1134/S1063782614050078
- By:
- Publication type:
- Article
Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions.
- Published in:
- Semiconductors, 2014, v. 48, n. 5, p. 625, doi. 10.1134/S1063782614050029
- By:
- Publication type:
- Article
Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well.
- Published in:
- Semiconductors, 2013, v. 47, n. 6, p. 804, doi. 10.1134/S1063782613060237
- By:
- Publication type:
- Article
Formation of Nanoscale T-Shaped Gates Using Directional Angular Deposition of Thin Aluminum Films.
- Published in:
- Russian Physics Journal, 2021, v. 64, n. 2, p. 261, doi. 10.1007/s11182-021-02324-3
- By:
- Publication type:
- Article
Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates.
- Published in:
- Russian Physics Journal, 2013, v. 56, n. 1, p. 55, doi. 10.1007/s11182-013-9994-7
- By:
- Publication type:
- Article
Analysis and Design of a GaAs Monolithic Tunable Polyphase Filter in S/C Bands.
- Published in:
- Journal of Microwaves, Optoelectronics & Electromagnetic Applications, 2015, v. 14, n. 1, p. AoP14, doi. 10.1590/2179-10742015v14i1423
- By:
- Publication type:
- Article
Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays.
- Published in:
- Instruments & Experimental Techniques, 2018, v. 61, n. 5, p. 665, doi. 10.1134/S0020441218040176
- By:
- Publication type:
- Article
Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 9, p. 703, doi. 10.1002/pssr.201600227
- By:
- Publication type:
- Article
Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots.
- Published in:
- Superficies y Vacío, 2017, v. 30, n. 4, p. 56, doi. 10.47566/2017_syv30_1-040056
- By:
- Publication type:
- Article
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors.
- Published in:
- Semiconductors, 2019, v. 53, n. 10, p. 1353, doi. 10.1134/S1063782619100178
- By:
- Publication type:
- Article
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
- Published in:
- Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
- By:
- Publication type:
- Article
Localization-Delocalization Transition in Disordered One-Dimensional Exciton-Polariton System.
- Published in:
- Semiconductors, 2018, v. 52, n. 4, p. 458, doi. 10.1134/S106378261804019X
- By:
- Publication type:
- Article
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1395, doi. 10.1134/S1063782617110136
- By:
- Publication type:
- Article
Features of the selective manganese doping of GaAs structures.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1415, doi. 10.1134/S1063782617110148
- By:
- Publication type:
- Article
Contactless characterization of manganese and carbon delta-layers in gallium arsenide.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1420, doi. 10.1134/S1063782617110161
- By:
- Publication type:
- Article
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1431, doi. 10.1134/S1063782617110185
- By:
- Publication type:
- Article
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1435, doi. 10.1134/S1063782617110288
- By:
- Publication type:
- Article
Inhomogeneous dopant distribution in III-V nanowires.
- Published in:
- Semiconductors, 2017, v. 51, n. 11, p. 1427, doi. 10.1134/S1063782617110173
- By:
- Publication type:
- Article