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The Study of DC- and AC-Driven GaAs-Coupled Gas Discharge Micro Plasma Systems: Modeling and Simulation.
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- Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3792, doi. 10.1007/s11664-024-11098-6
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- Article
Accurate computer-aided modeling of multilayer GaAs microstrip lines using a spectral-domain method.
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- Microwave & Optical Technology Letters, 2003, v. 39, n. 2, p. 159, doi. 10.1002/mop.11156
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- Article
60 GHz fiber-radio communication system for indoor ATM network.
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- Microwave & Optical Technology Letters, 2001, v. 30, n. 5, p. 307, doi. 10.1002/mop.1298
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- Article
Frequency-dependent behavior of optically illuminated HEMT.
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- Microwave & Optical Technology Letters, 2001, v. 30, n. 2, p. 138, doi. 10.1002/mop.1245
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- Article
S-band MMIC amplifier using Ga<sub>0.51</sub>In<sub>0.49</sub>P/GaAs MISFETS as active devices.
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- Microwave & Optical Technology Letters, 1999, v. 20, n. 3, p. 188, doi. 10.1002/(SICI)1098-2760(19990205)20:3<188::AID-MOP12>3.0.CO;2-L
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- Article
An optimization procedure for MMIC large-signal amplifiers.
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- Microwave & Optical Technology Letters, 1998, v. 19, n. 6, p. 386, doi. 10.1002/(SICI)1098-2760(19981220)19:6<386::AID-MOP3>3.0.CO;2-F
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- Article
Studies on low-leakage surface-undoped InAlAs/InGaAs-doped channel HFETs.
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- Microwave & Optical Technology Letters, 1998, v. 17, n. 5, p. 315, doi. 10.1002/(SICI)1098-2760(19980405)17:5<315::AID-MOP12>3.0.CO;2-2
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- Article
Modeling of nonlinear wave propagation in GaAs-AlAs MQW with a perturbation technique.
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- Microwave & Optical Technology Letters, 1997, v. 15, n. 4, p. 198, doi. 10.1002/(SICI)1098-2760(199707)15:4<198::AID-MOP3>3.0.CO;2-A
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- Article
K-band monolithic mixer with the use of a GaAs cold FET.
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- Microwave & Optical Technology Letters, 1997, v. 14, n. 4, p. 199, doi. 10.1002/(SICI)1098-2760(199703)14:4<199::AID-MOP1>3.0.CO;2-E
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- Article
THE EFFECTS OF CROSSING INTERCONNECTIONS ON SIGNAL PROPAGATION ON THE GaAs-BASED INTEGRATED CIRCUITS.
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- Microwave & Optical Technology Letters, 1993, v. 6, n. 11, p. 646, doi. 10.1002/mop.4650061110
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- Article
Entanglement between nuclear spin and field mode in GaAs semiconductors.
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- European Physical Journal B: Condensed Matter, 2006, v. 51, n. 1, p. 25, doi. 10.1140/epjb/e2006-00196-7
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- Article
Impact of Electronic States of Conical Shape of Indium Arsenide/Gallium Arsenide Semiconductor Quantum Dots.
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- Applications & Applied Mathematics, 2021, v. 16, n. 2, p. 1029
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- Article
Semiconductor spintronics: Doppler speed gun for spins.
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- Nature Physics, 2012, v. 8, n. 2, p. 115, doi. 10.1038/nphys2187
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- Article
In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001).
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- Journal of Nanoparticle Research, 2011, v. 13, n. 11, p. 5847, doi. 10.1007/s11051-011-0340-0
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- Article
Simultaneous effects of electron-hole correlation, hydrostatic pressure, and temperature on the third harmonic generation in parabolic GaAs quantum dots.
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- Journal of Nanoparticle Research, 2011, v. 13, n. 11, p. 6103, doi. 10.1007/s11051-011-0348-5
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- Article
An EBSD Study of Gallium Arsenide Nanopillars.
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- 2011
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- Abstract
Resonant tunneling transport through GaAs/AlGaAs superlattices in strong tilted magnetic field.
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- Journal of Experimental & Theoretical Physics, 2006, v. 103, n. 3, p. 428, doi. 10.1134/S1063776106090123
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- Article
Properties of Exciton States in GaAs/AlGaAs Quantum Wells in the Presence of a Quasi-Two-Dimensional Electron Gas.
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- Journal of Experimental & Theoretical Physics, 2002, v. 94, n. 4, p. 785, doi. 10.1134/1.1477904
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- Article
Towards single-chip radiofrequency signal processing via acoustoelectric electron–phonon interactions.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22935-1
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- Article
Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix.
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- Journal of Nanomaterials, 2022, p. 1, doi. 10.1155/2022/3767355
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- Article
Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 118, doi. 10.15407/spqeo20.01.118
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- Article
Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction.
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- Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3585, doi. 10.1007/s11664-018-6203-z
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- Article
Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3076, doi. 10.1007/s11664-015-3822-5
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- Article
Design of S-Graded Buffer Layers for Metamorphic ZnS<sub>y</sub>Se<sub>1−y</sub>/GaAs (001) Semiconductor Devices.
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- Journal of Electronic Materials, 2013, v. 42, n. 12, p. 3408, doi. 10.1007/s11664-013-2771-0
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- Article
Computational study of Ga<sub>n</sub>As<sub>m</sub> (m + n = 2–9) clusters using DFT calculations.
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- Journal of Nanoparticle Research, 2019, v. 21, n. 11, p. N.PAG, doi. 10.1007/s11051-019-4664-5
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- Article
The effect of low-level laser therapy during orthodontic movement: a preliminary study.
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- Lasers in Medical Science, 2008, v. 23, n. 1, p. 27, doi. 10.1007/s10103-007-0449-7
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- Article
Optical modulation of the effective channel thickness in GaAs field effect transistors with a Schottky gate (MESFETs).
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- Journal of Applied Spectroscopy, 2006, v. 73, n. 3, p. 394, doi. 10.1007/s10812-006-0089-x
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- Article
Influence of Nonlinear Refraction on the Spectral Characteristics of GaAlAs/GaAs Lasers.
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- Journal of Applied Spectroscopy, 2003, v. 70, n. 1, p. 79, doi. 10.1023/A:1023224509318
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- Article
MOVPE of structures with aluminum nanocluster layers in a GaAs matrix.
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- Technical Physics Letters, 2007, v. 33, n. 5, p. 444, doi. 10.1134/S1063785007050252
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- Article
Optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices.
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- Technical Physics Letters, 2007, v. 33, n. 5, p. 384, doi. 10.1134/S1063785007050070
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- Article
Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3–1.55 μm spectral range.
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- Technical Physics Letters, 2006, v. 32, n. 3, p. 229, doi. 10.1134/S1063785006030163
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- Article
Output Radiation Focusing in Curved-Grating Distributed Bragg Reflector Laser.
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- Technical Physics Letters, 2005, v. 31, n. 10, p. 824, doi. 10.1134/1.2121827
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- Article
Stability of Quasi-Ballistic MESFETs with Various Buffer Layer Structures under Irradiation with Neutrons Possessing Different Energy Spectra.
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- Technical Physics Letters, 2005, v. 31, n. 10, p. 881, doi. 10.1134/1.2121846
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- Article
GaAs Nanowhisker Arrays Grown by Magnetron Sputter Deposition.
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- Technical Physics Letters, 2005, v. 31, n. 8, p. 644, doi. 10.1134/1.2035352
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- Article
Strain-Renormalized Energy Spectra of Electrons and Holes in InAs Quantum Dots in the InAs/GaAs Heterosystem.
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- Technical Physics Letters, 2005, v. 31, n. 8, p. 691, doi. 10.1134/1.2035368
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- Article
Peculiarities of the Long-Range Effects in GaAs-Based Transistor Structures upon Combined Irradiation with Ions of Various Masses.
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- Technical Physics Letters, 2003, v. 29, n. 1, p. 54, doi. 10.1134/1.1544347
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- Article
Multivalent Substitution in a Quasi-Binary Ga[sub 1 – ][sub x](II–Mn–IV)[sub x]As Solid Solution.
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- Technical Physics Letters, 2002, v. 28, n. 11, p. 889, doi. 10.1134/1.1526873
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- Article
Spatiotemporal Structures in a Transversely Extended Semiconductor System.
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- Technical Physics Letters, 2002, v. 28, n. 11, p. 910, doi. 10.1134/1.1526880
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- Article
Photoelectric Properties of Planar Structures with Double Schottky Barrier Treated in a High-Vacuum Microwave Discharge.
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- Technical Physics Letters, 2002, v. 28, n. 8, p. 625, doi. 10.1134/1.1505531
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- Article
High-Power Low-Threshold Laser Diodes (λ = 0.94 μm) Based on MBE-Grown In[sub 0.1]Ga[sub 0.9]As/AlGaAs/GaAs Heterostructures.
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- Technical Physics Letters, 2002, v. 28, n. 8, p. 696, doi. 10.1134/1.1505554
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- Article
Photovoltaic X-ray Detectors Based on Epitaxial GaAs Structures.
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- Technical Physics Letters, 2002, v. 28, n. 1, p. 15, doi. 10.1134/1.1448629
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- Article
Special Features of the Periodic-Pulse-Train Laser Radiation Confinement in Doped Gallium Arsenide and Zinc Selenide.
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- Technical Physics Letters, 2002, v. 28, n. 1, p. 48, doi. 10.1134/1.1448640
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- Article
Lasing characteristics of lasers with a vertical cavity based on In[sub 0.2]Ga[sub 0.8]As quantum wells.
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- Technical Physics Letters, 1999, v. 25, n. 10, p. 775, doi. 10.1134/1.1262631
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- Article
Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures.
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- Technical Physics Letters, 1999, v. 25, n. 7, p. 522, doi. 10.1134/1.1262540
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- Article
Long-term relaxation of the photovoltage in a heteroepitaxial structure.
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- Technical Physics Letters, 1997, v. 23, n. 6, p. 430, doi. 10.1134/1.1261702
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- Article
Kinetic model of GaAs(100) growth from molecular beams.
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- Technical Physics Letters, 1997, v. 23, n. 1, p. 38, doi. 10.1134/1.1261610
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- Article
Exciton absorption of the GaAs semiconductor crystals under optical pumping to the conduction band.
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- Technical Physics, 2013, v. 58, n. 7, p. 1039, doi. 10.1134/S1063784213070256
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- Article
Self-limited ionization in bandgap renormalized GaAs at high femtosecond laser intensities.
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- Optical Engineering, 2012, v. 51, n. 12, p. 1, doi. 10.1117/1.OE.51.12.121808
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- Article
Mechanical Flip-Chip for Ultra-High Electron Mobility Devices.
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- Scientific Reports, 2015, p. 13494, doi. 10.1038/srep13494
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- Article
Electronic transport and band structures of GaAs/AlAs nanostructures superlattices for near-infrared detection.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 1, p. 1, doi. 10.1007/s00339-016-0629-z
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- Article