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Fabrication and characterization of modulation-doped β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 26, p. 1, doi. 10.1007/s10854-024-13430-6
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- Article
Electrodeposition of indium antimonide (InSb) from dimethyl sulfoxide-based electrolytes.
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- Journal of Solid State Electrochemistry, 2024, v. 28, n. 10, p. 3755, doi. 10.1007/s10008-024-05947-x
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- Article
OPTIMIZING DYESENSITIZED SOLAR CELL EFFICIENCY THROUGH TiO2/CuS DOPING: EFFECTS OF INTERNAL PARAMETER VARIATIONS.
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- Eastern-European Journal of Enterprise Technologies, 2024, v. 130, n. 5, p. 6, doi. 10.15587/1729-4061.2024.310454
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- Article
High Electron Mobility in Si-Doped Two-Dimensional β-Ga 2 O 3 Tuned Using Biaxial Strain.
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- Materials (1996-1944), 2024, v. 17, n. 16, p. 4008, doi. 10.3390/ma17164008
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- Article
Peculiarities of amplitude and phase spectra of semiconductor structures in THz frequency range.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 121, doi. 10.15407/spqeo25.02.121
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- Article
Composition and concentration dependences of electron mobility in semi-metal Hg1-xCdxTe quantum wells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 297, doi. 10.15407/spqeo18.03.297
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- Article
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg<sub>1-x</sub>Cd<sub>x</sub>Te/CdTe.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 85
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- Article
Electron mobility in the GaAs/InGaAs/GaAs quantum wells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 152
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- Article
Changes in Hall parameters after γ-irradiation (<sup>60</sup>Co) of n-Ge.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 294
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- Article
Effect of proton irradiation on AlGaN/AlN/GaN HEMTs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 279
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- Article
Influence of electron-electron drag on piezoresistance of n-Si.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 2, p. 183
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- Article
Band carriers scattering on impurities.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 2, p. 214, doi. 10.15407/spqeo13.02.214
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- Article
Electron mobility in Cd<sub>X</sub>Hg<sub>1-X</sub>Se.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 272
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- Article
Electron-electron drag in crystals with multivalley band.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 212
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- Article
Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 203, doi. 10.15407/spqeo11.03.203
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- Article
Calculation of electron mobility and effect of dislocation scattering in GaN.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 1, p. 1, doi. 10.15407/spqeo10.01.001
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- Article
Applications of aluminium hybrid foam sandwiches in battery housings for electric vehicles.
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- Materialwissenschaft und Werkstoffechnik, 2014, v. 45, n. 12, p. 1099, doi. 10.1002/mawe.201400358
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- Article
Graphdiyne: Bridging SnO<sub>2</sub> and Perovskite in Planar Solar Cells.
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- Angewandte Chemie, 2020, v. 132, n. 28, p. 11670, doi. 10.1002/ange.202003502
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- Article
On‐surface Synthesis of a Semiconducting 2D Metal–Organic Framework Cu<sub>3</sub>(C<sub>6</sub>O<sub>6</sub>) Exhibiting Dispersive Electronic Bands.
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- Angewandte Chemie, 2020, v. 132, n. 7, p. 2691, doi. 10.1002/ange.201913698
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- Article
Dodecatwistarene Imides with Zigzag‐Twisted Conformation for Organic Electronics.
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- Angewandte Chemie, 2020, v. 132, n. 5, p. 2024, doi. 10.1002/ange.201912356
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- Article
Indandione‐Terminated Quinoids: Facile Synthesis by Alkoxide‐Mediated Rearrangement Reaction and Semiconducting Properties.
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- Angewandte Chemie, 2020, v. 132, n. 1, p. 227, doi. 10.1002/ange.201911530
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- Article
High Electron Mobility of Amorphous Red Phosphorus Thin Films.
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- Angewandte Chemie, 2019, v. 131, n. 20, p. 6838, doi. 10.1002/ange.201902534
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- Article
Semi‐Locked Tetrathienylethene as a Building Block for Hole‐Transporting Materials: Toward Efficient and Stable Perovskite Solar Cells.
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- Angewandte Chemie, 2019, v. 131, n. 12, p. 3824, doi. 10.1002/ange.201811593
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- Article
Unique Supramolecular Liquid‐Crystal Phases with Different Two‐Dimensional Crystal Layers.
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- Angewandte Chemie, 2018, v. 130, n. 41, p. 13642, doi. 10.1002/ange.201805717
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- Article
n‐Type Azaacenes Containing B←N Units.
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- Angewandte Chemie, 2018, v. 130, n. 7, p. 2018, doi. 10.1002/ange.201712986
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- Article
Incorporation of 2,6‐Connected Azulene Units into the Backbone of Conjugated Polymers: Towards High‐Performance Organic Optoelectronic Materials.
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- Angewandte Chemie, 2018, v. 130, n. 5, p. 1336, doi. 10.1002/ange.201711802
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- Article
Ladder-type Heteroarenes: Up to 15 Rings with Five Imide Groups.
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- Angewandte Chemie, 2017, v. 129, n. 33, p. 10056, doi. 10.1002/ange.201702225
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- Article
Lead-free Perovskite Materials (NH<sub>4</sub>)<sub>3</sub>Sb<sub>2</sub>I<sub>x</sub>Br<sub>9− x</sub>.
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- Angewandte Chemie, 2017, v. 129, n. 23, p. 6628, doi. 10.1002/ange.201702265
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- Article
Self-Templating Synthesis of Hollow Co<sub>3</sub>O<sub>4</sub> Microtube Arrays for Highly Efficient Water Electrolysis.
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- Angewandte Chemie, 2017, v. 129, n. 5, p. 1344, doi. 10.1002/ange.201610413
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- Article
Polymer Acceptor Based on B←N Units with Enhanced Electron Mobility for Efficient All-Polymer Solar Cells.
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- Angewandte Chemie, 2016, v. 128, n. 17, p. 5399, doi. 10.1002/ange.201601305
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- Article
Synthesis, Structure, and Air-stable N-type Field-Effect Transistor Behaviors of Functionalized Octaazanonacene-8,19-dione.
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- Angewandte Chemie, 2015, v. 127, n. 21, p. 6390, doi. 10.1002/ange.201500972
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- Article
Effect of the Glass Transition Temperature of Organic Materials on Exciton Recombination Region of Deep Blue OLED under Thermal Stress.
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- Advanced Engineering Materials, 2024, v. 26, n. 5, p. 1, doi. 10.1002/adem.202301584
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An analytical model of low field and high field electron mobility in wurtzite indium nitride.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 11, p. 11353, doi. 10.1007/s10854-016-5259-x
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Non-parabolicity and inter-valley transitions within zinc-blende indium nitride.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5524, doi. 10.1007/s10854-014-2339-7
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- Article
Investigation on deep level defects in rapid thermal annealed undoped n-type InP.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 285, doi. 10.1007/s10854-009-9906-3
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- Article
IZO/Al/GZO multilayer films to replace ITO films.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 10, p. 981, doi. 10.1007/s10854-007-9430-2
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- Article
A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 678, doi. 10.1007/s10854-007-9378-2
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- Article
Electronic characterization of several 100 μm thick epitaxial GaAs layers.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 487, doi. 10.1007/s10854-007-9367-5
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- Article
Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 125, doi. 10.1007/s10854-007-9308-3
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- Article
Dielectric susceptibility of InN and related alloys.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 123, doi. 10.1007/s10854-007-9158-z
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- Article
Composite‐channel In<sub>0.</sub><sub>17</sub>Al<sub>0</sub><sub>.</sub><sub>83</sub>N/In<sub>0.</sub><sub>1</sub>Ga<sub>0</sub><sub>.</sub><sub>9</sub>N/GaN/Al<sub>0.</sub><sub>04</sub>Ga<sub>0</sub><sub>.</sub><sub>96</sub>N high electron mobility transistors for RF applications
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- International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 9, p. 1, doi. 10.1002/mmce.22775
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- Article
18‐31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T‐gate high electron mobility transistor (HEMT) process.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2018, v. 28, n. 8, p. 1, doi. 10.1002/mmce.21425
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Small-signal and noise modeling of class of HEMTs using knowledge-based artificial neural networks.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2013, v. 23, n. 1, p. 34, doi. 10.1002/mmce.20631
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- Article
In-deep insight into the extrinsic capacitance impact on GaN HEMT modeling at millimeter-wave band.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2012, v. 22, n. 3, p. 308, doi. 10.1002/mmce.20595
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- Article
Progress in the Study of Transient Luminous and Atmospheric Events: A Review.
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- Surveys in Geophysics, 2020, v. 41, n. 5, p. 1101, doi. 10.1007/s10712-020-09597-2
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- Article
Semiclassical consideration of oscillations of the layered crystal conductivity with allowance for the anisotropy of current carrier scattering on acoustic phonons.
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- Russian Physics Journal, 2006, v. 49, n. 6, p. 597, doi. 10.1007/s11182-006-0148-z
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- Article
Theory of a normal high-pressure glow discharge.
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- Russian Physics Journal, 2006, v. 49, n. 2, p. 199, doi. 10.1007/s11182-006-0087-8
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- Article
Nonlinear Waves in Carbon Nanotubes under Conditions of Electron-Phonon Bonding.
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- Russian Physics Journal, 2005, v. 48, n. 6, p. 639, doi. 10.1007/s11182-005-0179-x
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- Article
Estimation of the Electron Concentration, Diffusion Constant, and Mobility from Probe Current-Voltage Characteristics.
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- Russian Physics Journal, 2004, v. 47, n. 5, p. 539, doi. 10.1023/B:RUPJ.0000046328.20836.ec
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- Article
Contributions of Pseudoscalar Particles to the Abnormal Moments of an Electron in a Plane Wave Field.
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- Russian Physics Journal, 2004, v. 47, n. 4, p. 468, doi. 10.1023/B:RUPJ.0000042778.88964.5a
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- Article