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Comparative evaluation of centralized and decentralized solar street lighting systems.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2024, v. 14, n. 5, p. 4869, doi. 10.11591/ijece.v14i5.pp4869-4878
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Molecular level interaction, molecular structure, chemical reactivity, electronic and topological exploration and docking studies of 1-acetyl-4-piperidinecarboxylic acid.
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- Zeitschrift für Physikalische Chemie, 2024, v. 238, n. 9, p. 1705, doi. 10.1515/zpch-2023-0543
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Dimensional analysis of partial discharge initiated by a metallic particle adhering to the spacer surface in a gas-insulated system.
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- Communications in Science & Technology, 2021, v. 6, n. 2, p. 91, doi. 10.21924/cst.6.2.2021.556
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Simultaneous Optimal Allocation of EVCSs and RESs Using an Improved Genetic Method.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2024, v. 2024, p. 1, doi. 10.1049/2024/4798197
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- Article
Liver electrical activity upon epinephrine action.
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- Physiological Journal / Fiziologichnyi Zhurnal, 2024, v. 70, n. 4, p. 63
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Current Mode KHN Low-Voltage, High-Performance CMOS Transistor Based on Multi-Output Operational Transconductivity Amplifier for Universal Filter Applications.
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- Journal of Natural & Applied Sciences, 2024, v. 28, n. 2, p. 235, doi. 10.19113/sdufenbed.1512118
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- Article
МЕНТОЛ: КВАНТОВО-ХИМИЧЕСКИЙ ПОДХОД К ИЗУЧЕНИЮ СТРУКТУРЫ И СВОЙСТВ
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- Uzbek Chemical Journal / O'Zbekiston Kimyo Jurnali, 2024, v. 1, n. 3, p. 72
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Electroosmotic Flow Modulation through Soft Nanochannel Filled with Power-law Fluid under Impacts of Ion Steric and Ion Partitioning Effects.
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- Colloid Journal, 2024, v. 86, n. 4, p. 610, doi. 10.1134/S1061933X24600222
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Dihydrophenazine-based polymer with multi-electron redox characteristics: its electrochemical performances as the cathode of aqueous zinc-ion batteries.
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- Journal of Solid State Electrochemistry, 2024, v. 28, n. 10, p. 3769, doi. 10.1007/s10008-024-05968-6
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The Impact of Interfacial Recombination on Hysteresis in Back-Contact Perovskite Solar Cells.
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- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6003, doi. 10.1007/s11664-024-11308-1
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Metal‐Induced Enhancement of Tetrel Bonding. The Case of C⋅⋅⋅X−Ir<sup>III</sup> (X=Cl, Br) Tetrel Bond Involving a Methyl Group.
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- Chemistry - An Asian Journal, 2024, v. 19, n. 17, p. 1, doi. 10.1002/asia.202400421
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- Article
Engineering the electrostatic potential in a COF's pore by selecting quadrupolar building blocks and linkages.
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- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00496-3
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Numerical Diagnostics of Solution Blow-Up in a Thermoelectric Semiconductor Model.
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- Computational Mathematics & Mathematical Physics, 2024, v. 64, n. 7, p. 1595, doi. 10.1134/S0965542524700647
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Experimental Study on Thermal Runaway Characteristics of High-Nickel Ternary Lithium-Ion Batteries under Normal and Low Pressures.
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- Batteries, 2024, v. 10, n. 8, p. 287, doi. 10.3390/batteries10080287
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Recurrent Supramolecular Patterns in a Series of Salts of Heterocyclic Polyamines and Heterocyclic Dicarboxylic Acids: Synthesis, Single-Crystal X-ray Structure, Hirshfeld Surface Analysis, Energy Framework, and Quantum Chemical Calculations.
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- Crystals (2073-4352), 2024, v. 14, n. 8, p. 733, doi. 10.3390/cryst14080733
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Application of a Modified First-Order Plate Theory to Structural Analysis of Sensitive Elements in a Pyroelectric Detector.
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- Micromachines, 2024, v. 15, n. 8, p. 1012, doi. 10.3390/mi15081012
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A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices.
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- Micromachines, 2024, v. 15, n. 8, p. 993, doi. 10.3390/mi15080993
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Neural Network-Based Aggregated Equivalent Modeling of Distributed Photovoltaic External Characteristics of Faults.
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- Electronics (2079-9292), 2024, v. 13, n. 16, p. 3232, doi. 10.3390/electronics13163232
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Characterization of Breakdown Arcs Induced by Venting Particles Generated by Thermal Runaway of Large-Capacity Ternary Lithium-Ion Batteries.
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- Electronics (2079-9292), 2024, v. 13, n. 16, p. 3168, doi. 10.3390/electronics13163168
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Molecular Docking Study of the Benzylidene-bis-(4-Hydroxycoumarin) Derivatives as Antiviral to Coronavirus COVID-19.
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- Systematic Reviews in Pharmacy, 2024, v. 15, n. 2, p. 81, doi. 10.31858/0975-8453.15.2.81-87
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The free path and generation rate of fast-moving electron interacting with dielectric media.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 1, p. 010, doi. 10.15407/spqeo25.01.010
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The approaches for localized surface plasmon resonance wavelength position tuning. Short review.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 304, doi. 10.15407/spqeo24.03.304
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Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 3, p. 294, doi. 10.15407/spqeo21.03.294
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Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 259, doi. 10.15407/spqeo20.02.259
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Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 168, doi. 10.15407/spqeo20.02.168
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In--HgCdTe--In structures with symmetric nonlinear I--V characteristics for sub-THz direct detection.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 173, doi. 10.15407/spqeo20.02.173
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Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 97
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Determination of the Schottky barrier height in diodes based on Au--TiB<sub>2</sub>2--n-SiC 6H from the current-voltage and capacitance-voltage characteristics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 398
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Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 210
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Effect of proton irradiation on AlGaN/AlN/GaN HEMTs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 279
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Charge transport in bismuth orthogermanate crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 2, p. 170
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Negative magnetoresistance of heavily doped silicon p-n junction.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 88
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Non-ohmic conduction in tin dioxide based ceramics with copper addition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 71
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Electrophysical properties of meso-porous silicon free standing films modified with palladium.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 1
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Electrical properties of n-SnS<sub>2</sub>/n-CdIn<sub>2</sub>Te<sub>4</sub> heterostructure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 444, doi. 10.15407/spqeo13.04.444
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The study of solar cells with back side contacts at low illumination.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 348, doi. 10.15407/spqeo13.04.348
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Low voltage FLC for fast active matrix displays.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 3, p. 290, doi. 10.15407/spqeo13.03.290
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Elimination of the data-dependent defects by doubling the frequency of driving signals for cholesteric LCDs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 2, p. 173, doi. 10.15407/spqeo13.02.173
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Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 1, p. 61
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- Article
Factor of interfacial potential for the surface plasmon-polariton resonance sensor response.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 329, doi. 10.15407/spqeo11.04.329
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Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC<sub>60</sub>) film heterostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 236, doi. 10.15407/spqeo11.03.236
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Fluctuations of current, electroluminescence and acoustic emission in light-emitting ?<sup>3</sup>?<sup>5</sup> heterostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 230, doi. 10.15407/spqeo11.03.230
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Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 203, doi. 10.15407/spqeo11.03.203
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Charge characteristics of the MOS structures with oxide films containing Si nanocrystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 46, doi. 10.15407/spqeo10.02.046
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Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 40, doi. 10.15407/spqeo10.02.040
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Flexible electroluminescent panels.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 16, doi. 10.15407/spqeo10.02.016
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Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 4, p. 45, doi. 10.15407/spqeo9.04.045
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Determination of potential distribution in a three-barrier structure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 3, p. 35, doi. 10.15407/spqeo9.03.035
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Dynamic electrophysical characterization of porous silicon humidity sensing.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 79, doi. 10.15407/spqeo9.01.079
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Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 68, doi. 10.15407/spqeo9.01.068
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