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Design of a Novel Barrier-Well Asymmetric Spacer Layer Tunnel Diodes for Implantable Rectenna Circuits.
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- Iranian Journal of Electrical & Electronic Engineering, 2024, v. 20, n. 3, p. 1
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Detection and Prediction of Probe Mark Damage in Wafer Testing.
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- Electronics (2079-9292), 2024, v. 13, n. 20, p. 4075, doi. 10.3390/electronics13204075
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Research on Asymmetrical Operation of Multilevel Converter-Type Solid-State Transformers Based on High-Frequency Link Interconnection.
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- Electronics (2079-9292), 2024, v. 13, n. 20, p. 4043, doi. 10.3390/electronics13204043
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A New Magnetic Coupler with High Misalignment Tolerance and Inherent Constant Current–Constant Voltage for Underground Wireless Charging.
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- Energies (19961073), 2024, v. 17, n. 20, p. 5130, doi. 10.3390/en17205130
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The Effect of Air Humidity on the Performance of DC Link Capacitor Components.
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- Energies (19961073), 2024, v. 17, n. 20, p. 5081, doi. 10.3390/en17205081
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Capacitance estimation of MPPF capacitor considering temperature in railway vehicles APS.
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- Electrical Engineering, 2024, v. 106, n. 5, p. 5461, doi. 10.1007/s00202-024-02279-x
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Giant enhancement and quick stabilization of capacitance in antiferroelectrics by phase transition engineering.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-53661-z
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Exploring the Capacitance-Based Stress Self-Sensing Mechanism in Geopolymer Mortar and Its Correlation with Stress Levels.
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- Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5629, doi. 10.1007/s11664-024-11269-5
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Effect of Hold Time on Electrical Properties of Lithium Zinc Borate Glass Ceramics for Energy Storage Applications.
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- Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5682, doi. 10.1007/s11664-024-11265-9
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p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors.
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- Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2591, doi. 10.1007/s11664-024-11004-0
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Microstructure Evolution and Performance Enhancement of Sintered Aluminum Foils for Aluminum Electrolytic Capacitors.
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- Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2026, doi. 10.1007/s11664-024-10947-8
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Design, Modeling, and Fabrication of an Ultra-Thin Planar Capacitor.
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- Journal of Electronic Materials, 2024, v. 53, n. 1, p. 449, doi. 10.1007/s11664-023-10795-y
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- Article
Investigation of Core–Shell Junctionless Gate-Stack DG-FET in Low-Power Applications Using Charge-Based Modeling.
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- Journal of Electronic Materials, 2024, v. 53, n. 1, p. 157, doi. 10.1007/s11664-023-10742-x
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Silver-Doped Diamond-Like Carbon (DLC:Ag) Nanocomposite Films for Solar Tracking Applications.
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- Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2807, doi. 10.1007/s11664-023-10243-x
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OFF Current Reduction in Negative Capacitance Heterojunction TFET.
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- Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2695, doi. 10.1007/s11664-023-10232-0
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Design and Analysis of a Symmetrical Low-κ Source-Side Spacer Multi-gate Nanowire Device.
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- Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2561, doi. 10.1007/s11664-023-10217-z
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Synthesis of LiV<sub>3</sub>O<sub>8</sub> by an Ultrasound-Assisted Rheological Phase Reaction Method for Aqueous Supercapacitor Application.
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- Journal of Electronic Materials, 2023, v. 52, n. 3, p. 1794, doi. 10.1007/s11664-022-10108-9
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On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies.
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- Journal of Electronic Materials, 2022, v. 51, n. 8, p. 4437, doi. 10.1007/s11664-022-09689-2
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Nonlinearity Analysis of Quantum Capacitance and its Effect on Nano-Graphene Field Effect Transistor Characteristics.
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- Journal of Electronic Materials, 2022, v. 51, n. 8, p. 4616, doi. 10.1007/s11664-022-09639-y
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Design and Performance Optimization of Dopingless Vertical Nanowire TFET Using Gate Stacking Technique.
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- Journal of Electronic Materials, 2022, v. 51, n. 7, p. 4005, doi. 10.1007/s11664-022-09658-9
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Structural, Optical and Electrical Properties of Band-Aligned CdBr<sub>2</sub>/Au/Ga<sub>2</sub>S<sub>3</sub> Interfaces and Their Application As Band Filters Suitable for 5G Technologies.
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- Journal of Electronic Materials, 2022, v. 51, n. 7, p. 3693, doi. 10.1007/s11664-022-09616-5
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Design and Characterization of (Yb, Al, Cu, Au)/GeO<sub>2</sub>/C As MOS Field Effect Transistors, Negative Capacitance Effect Devices and Band Pass/Reject Filters Suitable for 4G Technologies.
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- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2510, doi. 10.1007/s11664-022-09514-w
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Dual P<sup>+</sup>-Wire Double-Gate Junctionless MOSFET with 10-nm Regime for Low Power Applications.
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- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2083, doi. 10.1007/s11664-022-09462-5
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Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN.
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- Journal of Electronic Materials, 2022, v. 51, n. 4, p. 1731, doi. 10.1007/s11664-022-09431-y
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A Review on a Negative Capacitance Field-Effect Transistor for Low-Power Applications.
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- Journal of Electronic Materials, 2022, v. 51, n. 3, p. 923, doi. 10.1007/s11664-021-09384-8
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Performance of Broken Gap MoO<sub>3</sub>/ZnS Heterojunctions as Abrupt Electronic Switches, MOSFETs, Negative Capacitance FETs and Bandpass Filters Suitable for 3G/4G Technologies.
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- Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1048, doi. 10.1007/s11664-021-09353-1
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Pitfalls and Methods in the Measurement of the Electrical Resistance and Capacitance of Materials.
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- Journal of Electronic Materials, 2021, v. 50, n. 12, p. 6567, doi. 10.1007/s11664-021-09223-w
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Experimental Study on Negative Capacitance and Luminous Intensity of Light-Emitting Diodes Under AC Small Signal Modulation.
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- Journal of Electronic Materials, 2021, v. 50, n. 11, p. 6214, doi. 10.1007/s11664-021-09148-4
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Preparation and Evaluation of the Supercapacitive Performance of MnO2/3D-reduced Graphene Oxide Aerogel Composite Electrode Through In Situ Electrochemical Deposition.
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- Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4557, doi. 10.1007/s11664-021-08997-3
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Synthesis of NiCo2O4 Nanoneedles on rGO for Asymmetric Supercapacitors.
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- Journal of Electronic Materials, 2021, v. 50, n. 7, p. 4196, doi. 10.1007/s11664-021-08918-4
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Analysis of Electrical and Capacitance–Voltage of PVA/nSi.
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- Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3498, doi. 10.1007/s11664-021-08867-y
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Chemical Vapor Deposition Synthesis and Characterization of Hollow Carbon Nanospheres with High Specific Capacitance and Excellent Cycling Stability.
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- Journal of Electronic Materials, 2021, v. 50, n. 5, p. 2922, doi. 10.1007/s11664-021-08818-7
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Liquid-Exfoliated Molybdenum Telluride Nanosheets for High-Performance Supercapacitors.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2277, doi. 10.1007/s11664-021-08742-w
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Innovative Organic MEH-PPV Heterojunction Device Made by USP and PVD.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2287, doi. 10.1007/s11664-021-08738-6
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Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias.
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- Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1162, doi. 10.1007/s11664-020-08691-w
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Analytical Modeling of Current and Quantum Capacitance of Single-Electron Transistor with Island Made of Armchair WSe2 Nanoribbon.
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- Journal of Electronic Materials, 2020, v. 49, n. 12, p. 7400, doi. 10.1007/s11664-020-08511-1
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Electrospun Ni-Ni(OH)2/Carbon Nanofibers as Flexible Binder-Free Supercapacitor Electrode with Enhanced Specific Capacitance.
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- Journal of Electronic Materials, 2020, v. 49, n. 12, p. 7211, doi. 10.1007/s11664-020-08458-3
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Effect of Channel Engineering on Quasi-Static Capacitance-Voltage Characteristics of Double-Gate MOSFET.
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- Journal of Electronic Materials, 2020, v. 49, n. 10, p. 5816, doi. 10.1007/s11664-020-08307-3
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Charge-Plasma-Based Negative Capacitance Ring-FET: Design, Investigation and Reliability Analysis.
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- Journal of Electronic Materials, 2020, v. 49, n. 8, p. 4852, doi. 10.1007/s11664-020-08205-8
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Postcomposition Preparation and Supercapacitive Properties of Polyaniline Nanotube/Graphene Oxide Composites with Interfacial Electrostatic Interaction.
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- Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4076, doi. 10.1007/s11664-020-08128-4
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Performance Analysis of a Charge Plasma Junctionless Nanotube Tunnel FET Including the Negative Capacitance Effect.
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- Journal of Electronic Materials, 2020, v. 49, n. 4, p. 2349, doi. 10.1007/s11664-020-07969-3
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Two-Dimensional Cadmium Hydroxide Nanosheets for Electrochemical Capacitors Under High Operating Voltage.
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- Journal of Electronic Materials, 2020, v. 49, n. 2, p. 995, doi. 10.1007/s11664-019-07860-w
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Junction Parameters and Electrical Characterization of the Al/n-Si/Cu<sub>2</sub>CoSnS<sub>4</sub>/Au Heterojunction.
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- Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6480, doi. 10.1007/s11664-019-07445-7
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Triangular Carbon Nanotube Bundle Interconnects for Subthreshold VLSI Circuits.
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- Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6372, doi. 10.1007/s11664-019-07431-z
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Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors.
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- Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6084, doi. 10.1007/s11664-019-07253-z
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Double Layer Impedance in Mixtures of Acetonitrile and Water.
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- Electroanalysis, 2018, v. 30, n. 8, p. 1626, doi. 10.1002/elan.201800025
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Pencil-drawn Paper-based Non-invasive and Wearable Capacitive Respiration Sensor.
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- Electroanalysis, 2017, v. 29, n. 12, p. 2680, doi. 10.1002/elan.201700438
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Quick Determination of Electroactive Surface Area of Some Oxide Electrode Materials.
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- Electroanalysis, 2016, v. 28, n. 10, p. 2394, doi. 10.1002/elan.201600178
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Electric Field Modulation of Silicon upon Tethering of Highly Charged Nucleic Acids. Capacitive Studies on DNA-modified Silicon (111).
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- Electroanalysis, 2016, v. 28, n. 10, p. 2367, doi. 10.1002/elan.201600285
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Self-assembled Ultrathin Gold Nanowires as Highly Transparent, Conductive and Stretchable Supercapacitor.
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- Electroanalysis, 2016, v. 28, n. 6, p. 1298, doi. 10.1002/elan.201600081
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- Article