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Design, Fabrication, and Characteristic Analysis of 64 × 64 InGaAs/InP Single-Photon Avalanche Diode Array.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2692, doi. 10.1007/s11664-022-09531-9
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- Publication type:
- Article
Effect of optical radiation on millimeter-wave characteristics and avalanche noise generation in double-drift impatt diodes based on opto-sensitive semiconductors.
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- Microwave & Optical Technology Letters, 2002, v. 33, n. 4, p. 295, doi. 10.1002/mop.10300
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- Article
A new accurate model for drain–gate avalanche current source of GaAs MESFET.
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- Microwave & Optical Technology Letters, 2000, v. 25, n. 4, p. 269, doi. 10.1002/(SICI)1098-2760(20000520)25:4<269::AID-MOP13>3.0.CO;2-8
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- Article
FLIP-CHIP InAIAs/InGaAs SUPERLATTICE AVALANCHE PHOTODIODES WITH BACK-ILLUMINATED STRUCTURES.
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- Microwave & Optical Technology Letters, 1994, v. 7, n. 3, p. 103, doi. 10.1002/mop.4650070307
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- Article
PHOTOAVALANCHE EFFECTS IN A GaAs MESFET.
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- Microwave & Optical Technology Letters, 1990, v. 3, n. 2, p. 60, doi. 10.1002/mop.4650030206
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- Publication type:
- Article
Hardware implementation algorithm and error analysis of high-speed fluorescence lifetime sensing systems using center-of-mass method.
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- Journal of Biomedical Optics, 2010, v. 15, n. 1, p. 017006, doi. 10.1117/1.3309737
- Publication type:
- Article
Efficiently reconstructing compound objects by quantum imaging with higher-order correlation functions.
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- Communications Physics, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42005-019-0234-5
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- Article
Single-photon Avalanche Diode Array Integrated with InGaZnO Thin-film Transistors for Time-correlated Applications.
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- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1176, doi. 10.1002/sdtp.10871
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- Article
Characteristic analysis of volatile avalanche diode threshold switching for bionic nerve synapse applications.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-00594-y
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- Article
Hot-Carrier Damage in N-Channel EDMOS Used in Single Photon Avalanche Diode Cell through Quasi-Static Modeling.
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- Micromachines, 2024, v. 15, n. 2, p. 205, doi. 10.3390/mi15020205
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- Publication type:
- Article
Avalanche Transients of Thick 0.35 µm CMOS Single-Photon Avalanche Diodes.
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- Micromachines, 2020, v. 11, n. 9, p. 869, doi. 10.3390/mi11090869
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- Article
Exciting an avalanche.
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- Nature Physics, 2012, v. 8, n. 7, p. 510, doi. 10.1038/nphys2366
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- Article
Time‐gated Raman and laser‐induced breakdown spectroscopy in mapping of eudialyte and catapleiite.
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- Journal of Raman Spectroscopy, 2020, v. 51, n. 9, p. 1462, doi. 10.1002/jrs.5622
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- Article
PULSE CLUSTERING UNDER AVALANCHE BREAKDOWN OF INTENTIONALLY DESIGNED SILICON MICROPLASMA.
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- Fluctuation & Noise Letters, 2008, v. 8, n. 2, p. L207, doi. 10.1142/S0219477508004374
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- Publication type:
- Article
NOISE CHARACTERISTIC AND QUALITY INVESTIGATION OF ULTRAFAST AVALANCHE PHOTODIODES.
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- Fluctuation & Noise Letters, 2007, v. 7, n. 3, p. L379
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- Article
A Solid-State Sub-Nanosecond Microwave Switch.
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- Russian Physics Journal, 2016, v. 59, n. 8, p. 1187, doi. 10.1007/s11182-016-0889-2
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- Publication type:
- Article
The effect of base thickness on the reverse volt–ampere characteristic of an S-diode.
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- Russian Physics Journal, 2009, v. 52, n. 2, p. 163, doi. 10.1007/s11182-009-9204-9
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- Publication type:
- Article
Single-photon avalanche diode detectors based on group IV materials.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 253, doi. 10.1007/s13204-021-01667-0
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- Publication type:
- Article
Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch.
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- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-29195-7
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- Publication type:
- Article
Low-latency time-of-flight non-line-of-sight imaging at 5 frames per second.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-26721-x
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- Publication type:
- Article
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 193, doi. 10.15407/spqeo22.02.193
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- Article
Peculiarities of study of Au-Ti-Pd-n<sup>+</sup>-n-n<sup>+</sup>-Si multilayer contact structure to avalanche transit-time diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 34, doi. 10.15407/spqeo22.01.34
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- Article
Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays.
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- Journal of Electronic Materials, 2015, v. 44, n. 11, p. 4187, doi. 10.1007/s11664-015-3975-2
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- Publication type:
- Article
Linear-Mode HgCdTe Avalanche Photodiodes for Photon-Counting Applications.
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- Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3092, doi. 10.1007/s11664-015-3824-3
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- Article
Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1303, doi. 10.1007/s11664-008-0449-9
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- Publication type:
- Article
Gated IR Imaging with 128 x 128 HgCdTe Electron Avalanche Photodiode FPA.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1334, doi. 10.1007/s11664-008-0433-4
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- Article
A Theoretical Model for the HgCdTe Electron Avalanche Photodiode.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1453, doi. 10.1007/s11664-008-0439-y
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- Publication type:
- Article
Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1376, doi. 10.1007/s11664-008-0420-9
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- Publication type:
- Article
Statistical Analysis of the Potential of a Bathymetric Lidar with Time-of-Flight Matrix Spad Photodetector.
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- Russian Physics Journal, 2020, v. 62, n. 9, p. 1724, doi. 10.1007/s11182-020-01898-8
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- Article
Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects.
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- Technical Physics, 2020, v. 65, n. 12, p. 2041, doi. 10.1134/S1063784220120117
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- Article
Comparison of Proton and Gamma Irradiation on Single-Photon Avalanche Diodes.
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- Electronics (2079-9292), 2024, v. 13, n. 6, p. 1086, doi. 10.3390/electronics13061086
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- Publication type:
- Article
Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes.
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- Electronics (2079-9292), 2024, v. 13, n. 1, p. 224, doi. 10.3390/electronics13010224
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- Article
LiDAR Point Cloud Object Recognition Method via Intensity Image Compensation.
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- Electronics (2079-9292), 2023, v. 12, n. 9, p. 2087, doi. 10.3390/electronics12092087
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- Publication type:
- Article
Gate-Width Optimisation Based on Time-Gated Single Photon Avalanche Diode Receiver for Optical Wireless Communications.
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- Electronics (2079-9292), 2022, v. 11, n. 14, p. N.PAG, doi. 10.3390/electronics11142218
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- Publication type:
- Article
A Multi-Time-Gated SPAD Array with Integrated Coarse TDCs.
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- Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11132015
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- Article
Bit Error Performance of APD and SPAD Receivers in Optical Wireless Communication.
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- Electronics (2079-9292), 2021, v. 10, n. 22, p. 2731, doi. 10.3390/electronics10222731
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- Publication type:
- Article
Design of a Real-Time Breakdown Voltage and On-Chip Temperature Monitoring System for Single Photon Avalanche Diodes.
- Published in:
- Electronics (2079-9292), 2021, v. 10, n. 1, p. 25, doi. 10.3390/electronics10010025
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- Publication type:
- Article
An Accurate Circuit Model for the Statistical Behavior of InP/InGaAs SPAD.
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- Electronics (2079-9292), 2020, v. 9, n. 12, p. 2059, doi. 10.3390/electronics9122059
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- Publication type:
- Article
Design and Implementation of a Compact Single-Photon Counting Module.
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- Electronics (2079-9292), 2020, v. 9, n. 7, p. 1131, doi. 10.3390/electronics9071131
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- Publication type:
- Article
Electrical μ-Lens Synthesis Using Dual-Junction Single-Photon Avalanche Diode.
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- Iranian Journal of Electrical & Electronic Engineering, 2019, v. 15, n. 4, p. 502, doi. 10.22068/IJEEE.15.4.502
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- Publication type:
- Article
Thick detection zone single-photon avalanche diode fabricated in 0.35 µm complementary metal-oxide semiconductors.
- Published in:
- Optical Engineering, 2015, v. 54, n. 5, p. 1, doi. 10.1117/1.OE.54.5.050503
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- Publication type:
- Article
Signal-to-noise ratio of Geiger-mode avalanche photodiode single-photon counting detectors.
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- Optical Engineering, 2014, v. 53, n. 8, p. 1, doi. 10.1117/1.OE.53.8.081904
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- Article
Frequency response and design consideration of GaN SAM avalanche photodiodes.
- Published in:
- Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 11, p. 1, doi. 10.1007/s00339-016-0531-8
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- Publication type:
- Article
Effect of temperature on avalanche region width and DC to RF conversion efficiency of the pnnn 4H-SiC impact avalanche transit time diodes.
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- Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 6, p. 1, doi. 10.1007/s00339-016-0087-7
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- Publication type:
- Article
Scale-Invariant Neuronal Avalanche Dynamics and the Cut-Off in Size Distributions.
- Published in:
- PLoS ONE, 2014, v. 9, n. 6, p. 1, doi. 10.1371/journal.pone.0099761
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- Publication type:
- Article
8 × 8-Mehrzonenerfassung.
- Published in:
- 2024
- Publication type:
- Product Review
Determination of the phonon spectrum of iron in myoglobin using inelastic X-ray scattering of synchrotron radiation.
- Published in:
- European Biophysics Journal, 1997, v. 25, n. 3, p. 221, doi. 10.1007/s002490050034
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- Publication type:
- Article
Simulation Study of Silicon-Based Single-Photon Avalanche Diodes with Double Buried Layers and Deep Trench Electrodes.
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- Crystals (2073-4352), 2021, v. 11, n. 10, p. 1176, doi. 10.3390/cryst11101176
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- Publication type:
- Article
Towards a solid‐state light detection and ranging system using holographic illumination and time‐of‐flight image sensing.
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- Journal of the Society for Information Display, 2022, v. 30, n. 5, p. 363, doi. 10.1002/jsid.1118
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- Publication type:
- Article
SPAD timing jitter modeling using Fourier series.
- Published in:
- Optica Applicata, 2023, v. 53, n. 2, p. 239, doi. 10.37190/oa230206
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- Publication type:
- Article