Found: 18
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Ferromagnetic Mn–Al–C L1<sub>0</sub> Formation by Electric Current Assisted Annealing.
- Published in:
- Advanced Engineering Materials, 2023, v. 25, n. 18, p. 1, doi. 10.1002/adem.202201805
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- Article
Effect of Induced Stimuli on the Leakage Current of Operative Oxide-based Devices inside a TEM.
- Published in:
- 2022
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- Publication type:
- Abstract
Birth of a grain boundary: In situ TEM Observation of the Microstructure Evolution in HfO<sub>2</sub> Based Memristors.
- Published in:
- 2021
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- Abstract
Birth of a grain boundary: In situ TEM Observation of the Microstructure Evolution in HfO2 Based Memristors.
- Published in:
- 2021
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- Abstract
Transforming Transmission Electron Microscopy with MerlinEM Electron Counting Detector.
- Published in:
- 2020
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- Abstract
Machine Learning Assisted Pattern Matching: Insight into Oxide Electronic Device Performance by Phase Determination in 4D-STEM Datasets.
- Published in:
- 2020
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- Publication type:
- Abstract
Transforming Transmission Electron Microscopy with MerlinEM Electron Counting Detector.
- Published in:
- 2020
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- Publication type:
- Abstract
Machine Learning Assisted Pattern Matching: Insight into Oxide Electronic Device Performance by Phase Determination in 4D-STEM Datasets.
- Published in:
- 2020
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- Publication type:
- Abstract
Piezoelectricity and rotostriction through polar and non-polar coupled instabilities in bismuth-based piezoceramics.
- Published in:
- Scientific Reports, 2016, p. 28742, doi. 10.1038/srep28742
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- Article
Enabling nanoscale flexoelectricity at extreme temperature by tuning cation diffusion.
- Published in:
- Nature Communications, 2018, v. 9, p. 1, doi. 10.1038/s41467-018-06959-8
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- Article
Controlling the Formation of Conductive Pathways in Memristive Devices.
- Published in:
- Advanced Science, 2022, v. 9, n. 33, p. 1, doi. 10.1002/advs.202201806
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- Article
Controlling the Formation of Conductive Pathways in Memristive Devices (Adv. Sci. 33/2022).
- Published in:
- Advanced Science, 2022, v. 9, n. 33, p. 1, doi. 10.1002/advs.202270212
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- Article
Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties (Adv. Funct. Mater. 20/2024).
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 20, p. 1, doi. 10.1002/adfm.202302290
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- Publication type:
- Article
Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 20, p. 1, doi. 10.1002/adfm.202302290
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- Publication type:
- Article
Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching (Adv. Electron. Mater. 11/2020).
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202070044
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- Publication type:
- Article
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000439
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- Article
Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019).
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201970054
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- Publication type:
- Article
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900484
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- Publication type:
- Article