Found: 1
Select item for more details and to access through your institution.
A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model.
- Published in:
- Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2619-x
- By:
- Publication type:
- Article