OpenURL Connection Search

Select item for more details and to access through your institution.

Indium Diffusion Behavior and Application in HfO<sub>2</sub>‐Based Conductive Bridge Random Access Memory.
Published in:
Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 11, p. N.PAG, doi. 10.1002/pssr.201900285
By:
- Zheng, Hao-Xuan;
- Shih, Chih-Cheng;
- Chang, Ting-Chang;
- Shih, Lin-Yi;
- Shih, Yao-Kai;
- Tseng, Yi-Ting;
- Chen, Wen-Chung;
- Huang, Wei-Chen;
- Yang, Chih-Cheng;
- Wu, Pei-Yu;
- Huang, Hui-Chun;
- Tsai, Tsung-Ming;
- Sze, Simon M.
Publication type:
Article
Study on the adsorption law of nonionic surfactants on the surface of clay minerals.
Published in:
Applied Chemical Industry, 2023, v. 52, n. 9, p. 2728
By:
- ZHAO Shuai;
- TIAN Yu;
- ZHENG Hao-xuan;
- TIAN Hao-rui;
- ZHANG Rui;
- HU Qiang-qiang;
- YAN Xiao-long;
- SHI Yong-min
Publication type:
Article
Conduction Mechanism and Improved Endurance in HfO-Based RRAM with Nitridation Treatment.
Published in:
Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2330-3
By:
- Yuan, Fang-Yuan;
- Deng, Ning;
- Shih, Chih-Cheng;
- Tseng, Yi-Ting;
- Chang, Ting-Chang;
- Chang, Kuan-Chang;
- Wang, Ming-Hui;
- Chen, Wen-Chung;
- Zheng, Hao-Xuan;
- Wu, Huaqiang;
- Qian, He;
- Sze, Simon
Publication type:
Article
Meridian study on the response current affected by electrical pulse and acupuncture.
Published in:
Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03373-2
By:
- Hung, Yu-Chiang;
- Chen, Wen-Chung;
- Chang, Ting-Chang;
- Zheng, Hao-Xuan;
- Liu, Yan-Wen;
- Tan, Yung-Fang;
- Lin, Shih-Kai;
- Lu, Ying-Hsin;
- Hu, Wen-Long;
- Tsai, Tsung-Ming
Publication type:
Article
Memristors: In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array (Adv. Electron. Mater. 9/2020).
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202070036
By:
- Cheng, Long;
- Li, Jiancong;
- Zheng, Hao‐Xuan;
- Yuan, Peng;
- Yin, Jiahao;
- Yang, Ling;
- Luo, Qing;
- Li, Yi;
- Lv, Hangbing;
- Chang, Ting‐Chang;
- Miao, Xiangshui
Publication type:
Article
In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000457
By:
- Cheng, Long;
- Li, Jiancong;
- Zheng, Hao‐Xuan;
- Yuan, Peng;
- Yin, Jiahao;
- Yang, Ling;
- Luo, Qing;
- Li, Yi;
- Lv, Hangbing;
- Chang, Ting‐Chang;
- Miao, Xiangshui
Publication type:
Article
Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000066
By:
- Huang, Wei‐Chen;
- Zheng, Hao‐Xuan;
- Chen, Po‐Hsun;
- Chang, Ting‐Chang;
- Tan, Yung‐Fang;
- Lin, Shih‐Kai;
- Zhang, Yong‐Ci;
- Jin, Fu‐Yuan;
- Wu, Chung‐Wei;
- Yeh, Yu‐Hsuan;
- Chou, Sheng‐Yao;
- Huang, Hui‐Chun;
- Chen, Yan‐Wen;
- Sze, Simon M.
Publication type:
Article
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High- k Spacer Structure.
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201700171
By:
- Tseng, Yi‐Ting;
- Chen, Po‐Hsun;
- Chang, Ting‐Chang;
- Chang, Kuan‐Chang;
- Tsai, Tsung‐Ming;
- Shih, Chih‐Cheng;
- Huang, Hui‐Chun;
- Yang, Cheng‐Chi;
- Lin, Chih‐Yang;
- Wu, Cheng‐Hsien;
- Zheng, Hao‐Xuan;
- Zhang, Shengdong;
- Sze, Simon M.
Publication type:
Article
Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High- k Spacer Structure (Adv. Electron. Mater. 9/2017).
Published in:
Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201770041
By:
- Tseng, Yi‐Ting;
- Chen, Po‐Hsun;
- Chang, Ting‐Chang;
- Chang, Kuan‐Chang;
- Tsai, Tsung‐Ming;
- Shih, Chih‐Cheng;
- Huang, Hui‐Chun;
- Yang, Cheng‐Chi;
- Lin, Chih‐Yang;
- Wu, Cheng‐Hsien;
- Zheng, Hao‐Xuan;
- Zhang, Shengdong;
- Sze, Simon M.
Publication type:
Article

Found: 9