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Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination.
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- Microscopy & Microanalysis, 2015, v. 21, n. 6, p. 1406, doi. 10.1017/S1431927615015378
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- Article
Strain Analysis of CdTe on InSb Epitaxial Structures Using X-ray-Based Reciprocal Space Measurements and Dynamical Diffraction Simulations.
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- Journal of Electronic Materials, 2018, v. 47, n. 10, p. 5666, doi. 10.1007/s11664-018-6566-1
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- Article
Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition.
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- Journal of Electronic Materials, 2011, v. 40, n. 4, p. 419, doi. 10.1007/s11664-010-1396-9
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- Article
Investigation of Structures, Stabilities, and Electronic and Magnetic Properties of Niobium Carbon Clusters Nb 7 C n (n = 1–7).
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- Molecules, 2024, v. 29, n. 8, p. 1692, doi. 10.3390/molecules29081692
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- Article
Making Sense of the Growth Behavior of Ultra-High Magnetic Gd 2 -Doped Silicon Clusters.
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- Molecules, 2023, v. 28, n. 13, p. 5071, doi. 10.3390/molecules28135071
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- Article
Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement.
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- Progress in Photovoltaics, 2013, v. 21, n. 3, p. 344, doi. 10.1002/pip.1215
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Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs.
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- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1799, doi. 10.1007/s10854-012-0665-1
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- Article
The high electron mobility for spin‐down channel of two‐dimensional spin‐polarized half‐metallic ferromagnetic EuSi<sub>2</sub>N<sub>4</sub> monolayer.
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- Journal of Computational Chemistry, 2024, v. 45, n. 31, p. 2678, doi. 10.1002/jcc.27474
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- Article
Aromatic and magnetic properties in a series of heavy rare earth‐doped Ge<sub>6</sub> cluster anions.
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- Journal of Computational Chemistry, 2024, v. 45, n. 14, p. 1087, doi. 10.1002/jcc.27317
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- Article
Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers.
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- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 197, doi. 10.1002/pssb.200672571
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- Article
Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi<sub>2</sub>Te<sub>3</sub> by Multifunctionality of Native Defects.
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- Advanced Materials, 2015, v. 27, n. 24, p. 3681, doi. 10.1002/adma.201501350
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- Article
Strategies for Analyzing Noncommon‐Atom Heterovalent Interfaces: The Case of CdTe‐on‐InSb.
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- Advanced Materials Interfaces, 2020, v. 7, n. 3, p. N.PAG, doi. 10.1002/admi.201901658
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- Article
An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures.
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- Light: Science & Applications, 2022, v. 11, n. 1, p. 1, doi. 10.1038/s41377-022-00833-5
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- Article