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48.2: Invited Paper: High conductivity & transparent aluminum‐based multi‐layer source/drain electrodes for thin film transistors.
- Published in:
- SID Symposium Digest of Technical Papers, 2018, v. 49, p. 504, doi. 10.1002/sdtp.12766
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- Article
Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes.
- Published in:
- Applied Sciences (2076-3417), 2017, v. 7, n. 8, p. 844, doi. 10.3390/app7080844
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- Article
Island-Like AZO/Al<sub>2</sub>O<sub>3</sub> Bilayer Channel Structure for Thin Film Transistors.
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- Advanced Materials Interfaces, 2017, v. 4, n. 15, p. n/a, doi. 10.1002/admi.201700063
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- Article
High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature.
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- Materials (1996-1944), 2018, v. 11, n. 10, p. 1871, doi. 10.3390/ma11101871
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- Article
A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO<sub>2</sub> Gate Insulator TFT with a High Concentration Precursor.
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- Materials (1996-1944), 2017, v. 10, n. 8, p. 972, doi. 10.3390/ma10080972
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- Article
All-Aluminum Thin Film Transistor Fabrication at Room Temperature.
- Published in:
- Materials (1996-1944), 2017, v. 10, n. 3, p. 222, doi. 10.3390/ma10030222
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- Article