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A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 34, p. 5316, doi. 10.1002/adfm.201303520
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- Article
Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2-x</sub>/TiN Structure.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 32, p. 5086, doi. 10.1002/adfm.201400064
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- Article
Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013).
- Published in:
- Advanced Functional Materials, 2013, v. 23, n. 11, p. 1350, doi. 10.1002/adfm.201370054
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- Article
32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory.
- Published in:
- Advanced Functional Materials, 2013, v. 23, n. 11, p. 1440, doi. 10.1002/adfm.201202170
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- Article
Resistance switching behavior of atomic layer deposited SrTiO<sub>3</sub> film through possible formation of Sr<sub>2</sub>Ti<sub>6</sub>O<sub>13</sub> or Sr<sub>1</sub>Ti<sub>11</sub>O<sub>20</sub> phases.
- Published in:
- Scientific Reports, 2016, p. 20550, doi. 10.1038/srep20550
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- Article
Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability.
- Published in:
- Advanced Functional Materials, 2019, v. 29, n. 8, p. N.PAG, doi. 10.1002/adfm.201806278
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- Article
Highly Improved Uniformity in the Resistive Switching Parameters of TiO<sub>2</sub> Thin Films by Inserting Ru Nanodots.
- Published in:
- Advanced Materials, 2013, v. 25, n. 14, p. 1987, doi. 10.1002/adma.201204572
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- Article
Weight Update Generation Circuit Utilizing Phase Noise of Integrated Complementary Metal–Oxide–Semiconductor Ring Oscillator for Memristor Crossbar Array Neural Network‐Based Stochastic Learning.
- Published in:
- Advanced Intelligent Systems (2640-4567), 2020, v. 2, n. 5, p. 1, doi. 10.1002/aisy.202000011
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- Article
A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors.
- Published in:
- Advanced Intelligent Systems (2640-4567), 2020, v. 2, n. 1, p. N.PAG, doi. 10.1002/aisy.201900082
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- Article
In‐Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 9, p. 1, doi. 10.1002/pssr.202100208
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- Article
Single‐Cell Stateful Logic Using a Dual‐Bit Memristor.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 3, p. N.PAG, doi. 10.1002/pssr.201800629
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- Article
Nociceptive Memristor.
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- Advanced Materials, 2018, v. 30, n. 8, p. 1, doi. 10.1002/adma.201704320
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- Article
Pt/Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2-x</sub> /Ti Resistive Switching Memory Competing with Multilevel NAND Flash.
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- Advanced Materials, 2015, v. 27, n. 25, p. 3811, doi. 10.1002/adma.201501167
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- Article
Review of Semiconductor Flash Memory Devices for Material and Process Issues (Adv. Mater. 43/2023).
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- Advanced Materials, 2023, v. 35, n. 43, p. 1, doi. 10.1002/adma.202370310
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- Article
Review of Semiconductor Flash Memory Devices for Material and Process Issues.
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- Advanced Materials, 2023, v. 35, n. 43, p. 1, doi. 10.1002/adma.202200659
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- Article
A Novel Stateful Logic Device and Circuit for In‐Memory Parity Programming in Crossbar Memory.
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- Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000672
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- Article
What Will Come After V‐NAND—Vertical Resistive Switching Memory?
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- Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800914
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- Article
Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor.
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- 2019
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- Correction Notice
Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 11, p. N.PAG, doi. 10.1002/aelm.201800189
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- Article
Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10<sup>9</sup> (Adv. Electron. Mater. 7/2017).
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700152
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- Publication type:
- Article
Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10<sup>9</sup>.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700152
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- Article
Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO<sub>2</sub>/Cu Electrochemical Metallization Device.
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- Advanced Electronic Materials, 2017, v. 3, n. 2, p. 1, doi. 10.1002/aelm.201600404
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- Publication type:
- Article
Comprehensive Writing Margin Analysis and its Application to Stacked one Diode‐One Memory Device for High‐Density Crossbar Resistance Switching Random Access Memory.
- Published in:
- Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600326
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- Publication type:
- Article