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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 317
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- Article
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 337, doi. 10.15407/spqeo13.04.337
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- Article
Enhancement of Photoluminescence Intensity in MOCVD-Grown GaAs/AlGaAs Quantum Wells by Hydrogenation.
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- Physica Status Solidi (B), 1993, v. 178, n. 1, p. K57, doi. 10.1002/pssb.2221780137
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- Article
X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure.
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- Semiconductors, 2010, v. 44, n. 9, p. 1199, doi. 10.1134/S1063782610090174
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Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures.
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- Semiconductors, 2010, v. 44, n. 8, p. 1090, doi. 10.1134/S1063782610080245
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- Article
Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask.
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- Semiconductors, 1997, v. 31, n. 4, p. 401
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- Article