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The response mechanism analysis of HMX1 knockout strain to levulinic acid in Saccharomyces cerevisiae.
Published in:
Frontiers in Microbiology, 2024, p. 1, doi. 10.3389/fmicb.2024.1416903
By:
- Jiaye Tang;
- Yulei Chen;
- Qian Li;
- Wenli Xin;
- Ximeng Xiao;
- Xuemei Chen;
- Lixi Yang;
- Borui Mou;
- Jialian Li;
- Fujia Lu;
- Chun Fu;
- Wencong Long;
- Hong Liao;
- Xuebing Han;
- Peng Feng;
- Wei Li;
- Kedi Zhou;
- Liuyun Yang;
- Yaojun Yang;
- Menggen Ma
Publication type:
Article
Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier.
Published in:
Advanced Functional Materials, 2021, v. 31, n. 15, p. 1, doi. 10.1002/adfm.202009771
By:
- Zhang, Xiaoyue;
- Tang, Ning;
- Yang, Liuyun;
- Fang, Chi;
- Wan, Caihua;
- Liu, Xingchen;
- Zhang, Shixiong;
- Zhang, Yunfan;
- Wang, Xinqiang;
- Lu, Yuan;
- Ge, Weikun;
- Han, Xiufeng;
- Shen, Bo
Publication type:
Article
Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures.
Published in:
Advanced Functional Materials, 2020, v. 30, n. 46, p. 1, doi. 10.1002/adfm.202004450
By:
- Yang, Liuyun;
- Wang, Xinqiang;
- Wang, Tao;
- Wang, Jingyue;
- Zhang, Wenjie;
- Quach, Patrick;
- Wang, Ping;
- Liu, Fang;
- Li, Duo;
- Chen, Ling;
- Liu, Shangfeng;
- Wei, Jiaqi;
- Yang, Xuelin;
- Xu, Fujun;
- Tang, Ning;
- Tan, Wei;
- Zhang, Jian;
- Ge, Weikun;
- Wu, Xiaosong;
- Zhang, Chi
Publication type:
Article
Experimental Evidence of Large Bandgap Energy in Atomically Thin AlN.
Published in:
Advanced Functional Materials, 2019, v. 29, n. 36, p. N.PAG, doi. 10.1002/adfm.201902608
By:
- Wang, Ping;
- Wang, Tao;
- Wang, Hui;
- Sun, Xiaoxiao;
- Huang, Pu;
- Sheng, Bowen;
- Rong, Xin;
- Zheng, Xiantong;
- Chen, Zhaoying;
- Wang, Yixin;
- Wang, Ding;
- Liu, Huapeng;
- Liu, Fang;
- Yang, Liuyun;
- Li, Duo;
- Chen, Ling;
- Yang, Xuelin;
- Xu, Fujun;
- Qin, Zhixin;
- Shi, Junjie
Publication type:
Article
Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes.
Published in:
Advanced Science, 2020, v. 7, n. 21, p. 1, doi. 10.1002/advs.202000917
By:
- Liu, Fang;
- Yu, Ye;
- Zhang, Yuantao;
- Rong, Xin;
- Wang, Tao;
- Zheng, Xiantong;
- Sheng, Bowen;
- Yang, Liuyun;
- Wei, Jiaqi;
- Wang, Xuepeng;
- Li, Xianbin;
- Yang, Xuelin;
- Xu, Fujun;
- Qin, Zhixin;
- Zhang, Zhaohui;
- Shen, Bo;
- Wang, Xinqiang
Publication type:
Article
High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy.
Published in:
Advanced Science, 2018, v. 5, n. 9, p. 1, doi. 10.1002/advs.201800844
By:
- Wang, Tao;
- Wang, Xinqiang;
- Chen, Zhaoying;
- Sun, Xiaoxiao;
- Wang, Ping;
- Zheng, Xiantong;
- Rong, Xin;
- Yang, Liuyun;
- Guo, Weiwei;
- Wang, Ding;
- Cheng, Jianpeng;
- Lin, Xi;
- Li, Peng;
- Li, Jun;
- He, Xin;
- Zhang, Qiang;
- Li, Mo;
- Zhang, Jian;
- Yang, Xuelin;
- Xu, Fujun
Publication type:
Article
Dominant Influence of Interface Roughness Scattering on the Performance of GaN Terahertz Quantum Cascade Lasers.
Published in:
Nanoscale Research Letters, 2019, v. 14, n. 1, p. N.PAG, doi. 10.1186/s11671-019-3043-6
By:
- Cheng, Junyan;
- Quach, Patrick;
- Wang, Ding;
- Liu, Fang;
- Liu, Shangfeng;
- Yang, Liuyun;
- Liu, Huapeng;
- Shen, Bo;
- Tong, Yuzhen;
- Wang, Xinqiang
Publication type:
Article
Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration (Adv. Mater. 5/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 5, p. 1, doi. 10.1002/adma.202270038
By:
- Liu, Fang;
- Wang, Tao;
- Zhang, Zhihong;
- Shen, Tong;
- Rong, Xin;
- Sheng, Bowen;
- Yang, Liuyun;
- Li, Duo;
- Wei, Jiaqi;
- Sheng, Shanshan;
- Li, Xingguang;
- Chen, Zhaoying;
- Tao, Renchun;
- Yuan, Ye;
- Yang, Xuelin;
- Xu, Fujun;
- Zhang, Jingmin;
- Liu, Kaihui;
- Li, Xin‐Zheng;
- Shen, Bo
Publication type:
Article
Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration.
Published in:
Advanced Materials, 2022, v. 34, n. 5, p. 1, doi. 10.1002/adma.202106814
By:
- Liu, Fang;
- Wang, Tao;
- Zhang, Zhihong;
- Shen, Tong;
- Rong, Xin;
- Sheng, Bowen;
- Yang, Liuyun;
- Li, Duo;
- Wei, Jiaqi;
- Sheng, Shanshan;
- Li, Xingguang;
- Chen, Zhaoying;
- Tao, Renchun;
- Yuan, Ye;
- Yang, Xuelin;
- Xu, Fujun;
- Zhang, Jingmin;
- Liu, Kaihui;
- Li, Xin‐Zheng;
- Shen, Bo
Publication type:
Article
Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800651
By:
- Chen, Zhaoying;
- Wang, Tao;
- Yang, Liuyun;
- Sheng, Bowen;
- Lin, Shaojun;
- Rong, Xin;
- Wang, Ping;
- Ge, Weikun;
- Shen, Bo;
- Wang, Xinqiang;
- Wang, Ding;
- Liu, Yinong;
- Su, Juan;
- Shi, Xiangyang;
- Tan, Wei;
- Zhang, Jian
Publication type:
Article

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