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An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4599, doi. 10.1007/s11664-021-09001-8
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Y.;
- Yakushev, M. V.
Publication type:
Article
Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures.
Published in:
Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3714, doi. 10.1007/s11664-021-08877-w
By:
- Izhnin, I. I.;
- Mynbaev, K. D.;
- Voitsekhovskii, A. V.;
- Korotaev, A. G.;
- Varavin, V. S.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Yakushev, M. V.;
- Fitsych, O. I.;
- Swiatek, Z.;
- Jakiela, R.
Publication type:
Article
Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques.
Published in:
Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2323, doi. 10.1007/s11664-021-08752-8
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Varavin, V. S.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Y.;
- Yakushev, M. V.;
- Marin, D. V.
Publication type:
Article
Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8.
Published in:
Journal of Electronic Materials, 2020, v. 49, n. 8, p. 4642, doi. 10.1007/s11664-020-08160-4
By:
- Mynbaev, K. D.;
- Smirnov, A. M.;
- Bazhenov, N. L.;
- Mikhailov, N. N.;
- Remesnik, V. G.;
- Yakushev, M. V.
Publication type:
Article
Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques.
Published in:
Journal of Electronic Materials, 2020, v. 49, n. 5, p. 3202, doi. 10.1007/s11664-020-08005-0
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Varavin, V. S.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Y.;
- Yakushev, M. V.;
- Marin, D. V.
Publication type:
Article
The Effect of a Surface Layer on Determination of the Dielectric Functions of ZnTe Films by the Ellipsometric Technique.
Published in:
Optics & Spectroscopy, 2002, v. 92, n. 5, p. 780, doi. 10.1134/1.1481146
By:
- Shvets, V. A.;
- Yakushev, M. V.
Publication type:
Article
Photoluminescence Spectra of the AgGaTe[sub 2] Single Crystals Doped with Hydrogen.
Published in:
Optics & Spectroscopy, 2000, v. 88, n. 3, p. 377
By:
- Bodnar’, I. V.;
- Gremenok, V. F.;
- Martin, R. W.;
- Yakushev, M. V.
Publication type:
Article
Investigation of the Strongly Correlated Two-Hole State of Copper in Resonant Photoemission States of Chalcogenide Materials for Photovoltaics.
Published in:
Physics of Metals & Metallography, 2018, v. 119, n. 6, p. 520, doi. 10.1134/S0031918X18060108
By:
- Kuznetsova, T. V.;
- Grebennikov, V. I.;
- Yakushev, M. V.
Publication type:
Article
The Effect of Copper on the Electronic Structure and Effective Masses of CuIn5Se8 Single Crystals Revealed by Angle-Resolved Photoemission Spectroscopy.
Published in:
Physics of Metals & Metallography, 2018, v. 119, n. 5, p. 430, doi. 10.1134/S0031918X18050083
By:
- Kuznetsova, T. V.;
- Grebennikov, V. I.;
- Lupiszanski, D.;
- Bodnar’, I. V.;
- Vyalikh, D.;
- Reinert, F.;
- Yakushev, M. V.
Publication type:
Article
Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator.
Published in:
Russian Physics Journal, 2018, v. 60, n. 11, p. 1853, doi. 10.1007/s11182-018-1294-9
By:
- Dzyadukh, S. M.;
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Sidorov, G. Yu.;
- Varavin, V. S.;
- Vasil’ev, V. V.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Yakushev, M. V.
Publication type:
Article
Defects in Arsenic Implanted р -n- and n -p- Structures Based on MBE Grown CdHgTe Films.
Published in:
Russian Physics Journal, 2018, v. 60, n. 10, p. 1752, doi. 10.1007/s11182-018-1278-9
By:
- Izhnin, I.;
- Fitsych, E.;
- Voitsekhovskii, A.;
- Korotaev, A.;
- Mynbaev, K.;
- Varavin, V.;
- Dvoretsky, S.;
- Mikhailov, N.;
- Yakushev, M.;
- Bonchyk, A.;
- Savytskyy, H.;
- Świątek, Z.
Publication type:
Article
Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdHgTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates.
Published in:
Russian Physics Journal, 2017, v. 60, n. 2, p. 360, doi. 10.1007/s11182-017-1083-x
By:
- Voitsekhovskii, A.;
- Nesmelov, S.;
- Dzyadukh, S.;
- Varavin, V.;
- Vasil'ev, V.;
- Dvoretskii, S.;
- Mikhailov, N.;
- Yakushev, M.;
- Sidorov, G.
Publication type:
Article
Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy.
Published in:
Russian Physics Journal, 2016, v. 59, n. 3, p. 442, doi. 10.1007/s11182-016-0792-x
By:
- Świątek, Z.;
- Ozga, P.;
- Izhnin, I.;
- Fitsych, E.;
- Voitsekhovskii, A.;
- Korotaev, A.;
- Mynbaev, K.;
- Varavin, V.;
- Dvoretsky, S.;
- Mikhailov, N.;
- Yakushev, M.;
- Bonchyk, A.;
- Savytsky, H.
Publication type:
Article
The photoelectrical properties of MIS structures based on heteroepitaxial n-Hg1- xCd xTe ( x = 0.21-0.23).
Published in:
Russian Physics Journal, 2013, v. 55, n. 8, p. 917, doi. 10.1007/s11182-013-9901-2
By:
- Voitsekhovskii, A.;
- Nesmelov, S.;
- Dzyadukh, S.;
- Vasil'ev, V.;
- Varavin, V.;
- Dvoretskii, S.;
- Mikhailov, N.;
- Sidorov, Yu.;
- Yakushev, M.
Publication type:
Article
Analysis of the photoluminescence spectra of CdHgte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy.
Published in:
Russian Physics Journal, 2013, v. 55, n. 8, p. 910, doi. 10.1007/s11182-013-9900-3
By:
- Voitsekhovskii, A.;
- Gorn, D.;
- Izhnin, I.;
- Izhnin, A.;
- Goldin, V.;
- Mikhailov, N.;
- Dvoretskii, S.;
- Sidorov, Yu.;
- Yakushev, M.;
- Varavin, V.
Publication type:
Article
Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric.
Published in:
Russian Physics Journal, 2010, v. 53, n. 2, p. 148, doi. 10.1007/s11182-010-9399-9
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Varavin, V. S.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.;
- Vasil'ev, V. V.;
- Yakushev, M. V.
Publication type:
Article
Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films.
Published in:
Applied Nanoscience, 2022, v. 12, n. 3, p. 395, doi. 10.1007/s13204-021-01704-y
By:
- Izhnin, I.;
- Voitsekhovskii, A. V.;
- Korotaev, A. G.;
- Mynbaev, K. D.;
- Swiatek, Z.;
- Morgiel, J.;
- Fitsych, O. I.;
- Varavin, V. S.;
- Marin, D. V.;
- Yakushev, M. V.;
- Bonchyk, O. Yu.;
- Savytskyy, H. V.
Publication type:
Article
Admittance of barrier nanostructures based on MBE HgCdTe.
Published in:
Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z
By:
- Izhnin, I. I.;
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Y.;
- Yakushev, M. V.
Publication type:
Article
Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy.
Published in:
Applied Nanoscience, 2020, v. 10, n. 12, p. 4971, doi. 10.1007/s13204-020-01327-9
By:
- Bonchyk, O. Yu.;
- Savytskyy, H. V.;
- Izhnin, I. I.;
- Mynbaev, K. D.;
- Syvorotka, I. I.;
- Korotaev, A. G.;
- Voitsekhovskii, A. V.;
- Fitsych, O. I.;
- Varavin, V. S.;
- Marin, D. V.;
- Mikhailov, N. N.;
- Yakushev, M. V.;
- Swiatek, Z.;
- Morgiel, J.;
- Jakiela, R.
Publication type:
Article
TEM studies of structural defects in HgTe/HgCdTe quantum wells.
Published in:
Applied Nanoscience, 2020, v. 10, n. 8, p. 2867, doi. 10.1007/s13204-019-01142-x
By:
- Bonchyk, O. Yu.;
- Savytskyy, H. V.;
- Swiatek, Z.;
- Morgiel, Y.;
- Izhnin, I. I.;
- Voitsekhovskii, A. V.;
- Korotaev, A. G.;
- Mynbaev, K. D.;
- Fitsych, O. I.;
- Varavin, V. S.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Yakushev, M. V.
Publication type:
Article
Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study.
Published in:
Applied Nanoscience, 2019, v. 9, n. 5, p. 725, doi. 10.1007/s13204-018-0679-y
By:
- Bonchyk, O. Yu.;
- Savytskyy, H. V.;
- Swiatek, Z.;
- Morgiel, Y.;
- Izhnin, I. I.;
- Voitsekhovskii, A. V.;
- Korotaev, A. G.;
- Mynbaev, K. D.;
- Fitsych, O. I.;
- Varavin, V. S.;
- Dvoretsky, S. A.;
- Marin, D. V.;
- Yakushev, M. V.
Publication type:
Article
A new design of scanning IR detectors.
Published in:
Opto-Electronics Review, 2020, v. 28, n. 2, p. 93, doi. 10.24425/opelre.2020.132505
By:
- Dvoretsky, S. A.;
- Kovchavtsev, A. P.;
- Lee, I. I.;
- Polovinkin, V. G.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Narrow-gap piezoelectric heterostructure as IR detector.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 1, p. 65
By:
- Sizov, F. F.;
- Smirnov, A. B.;
- Savkina, R. K.;
- Deriglazov, V. A.;
- Yakushev, M. V.
Publication type:
Article
Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies.
Published in:
Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4731, doi. 10.1007/s11664-018-6364-9
By:
- Mynbaev, K. D.;
- Bazhenov, N. L.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Varavin, V. S.;
- Marin, D. V.;
- Yakushev, M. V.
Publication type:
Article
Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors.
Published in:
Russian Physics Journal, 2021, v. 64, n. 5, p. 763, doi. 10.1007/s11182-021-02390-7
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Admittance of Barrier Structures Based on Mercury Cadmium Telluride.
Published in:
Russian Physics Journal, 2020, v. 63, n. 3, p. 432, doi. 10.1007/s11182-020-02054-y
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride.
Published in:
Russian Physics Journal, 2020, v. 63, n. 6, p. 907, doi. 10.1007/s11182-020-02117-0
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE.
Published in:
Russian Physics Journal, 2020, v. 63, n. 2, p. 290, doi. 10.1007/s11182-020-02034-2
By:
- Izhnin, I. I.;
- Fitsych, O. I.;
- Voitsekhovskii, A. V.;
- Korotaev, A. G.;
- Mynbaev, K. D.;
- Kurbanov, K. R.;
- Varavin, V. S.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Remesnik, V. G.;
- Yakushev, M. V.;
- Bonchyk, O. Yu.;
- Savytskyy, H. V.;
- Świątek, Z.;
- Morgiel, J.
Publication type:
Article
Influence of Chemical Composition Heterogeneity on the Spectral Position of the Fundamental Absorption Edge of Cu(In, Ga)Se Solid Solutions.
Published in:
Journal of Applied Spectroscopy, 2014, v. 81, n. 3, p. 404, doi. 10.1007/s10812-014-9945-2
By:
- Refahati, N.;
- Mudryi, A.;
- Zhivulko, V.;
- Yakushev, M.;
- Martin, R.
Publication type:
Article
Structural and optical properties of CdS/Cu(In,Ga)Se heterostructures irradiated by high-energy electrons*.
Published in:
Journal of Applied Spectroscopy, 2010, v. 77, n. 5, p. 668, doi. 10.1007/s10812-010-9385-6
By:
- Karotki, A.;
- Mudryi, A.;
- Yakushev, M.;
- Luckert, F.;
- Martin, R.
Publication type:
Article
Structural and optical properties of thin films of Cu(In,Ga)Se2 semiconductor compounds.
Published in:
Journal of Applied Spectroscopy, 2010, v. 77, n. 3, p. 371, doi. 10.1007/s10812-010-9341-5
By:
- Mudryi, A. V.;
- Gremenok, V. F.;
- Karotki, A. V.;
- Zalesski, V. B.;
- Yakushev, M. V.;
- Luckert, F.;
- Martin, R.
Publication type:
Article
Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods.
Published in:
Journal of Applied Spectroscopy, 2009, v. 76, n. 2, p. 215, doi. 10.1007/s10812-009-9163-5
By:
- Mudryi, A. V.;
- Karotki, A. V.;
- Yakushev, M. V.;
- Martin, R.
Publication type:
Article
Magnetic field effect on free and bound excitons in chalcopyrite CuInS2.
Published in:
Journal of Applied Spectroscopy, 2007, v. 74, n. 3, p. 415, doi. 10.1007/s10812-007-0068-x
By:
- Mudryi, A.;
- Ivanyukovich, A.;
- Yakushev, M.;
- Martin, R.;
- Saad, A.
Publication type:
Article
Defect formation in thin films of the semiconductor compound Cu(In,Ga)Se2 when bombarded by protons.
Published in:
Journal of Applied Spectroscopy, 2006, v. 73, n. 6, p. 928, doi. 10.1007/s10812-006-0178-x
By:
- Mudryi, A. V.;
- Ivanyukovich, A. V.;
- Yakushev, M. V.;
- Kulikauskas, V. S.;
- Chernysh, V. S.
Publication type:
Article
Optical properties of indium nitride powder and films.
Published in:
Journal of Applied Spectroscopy, 2006, v. 73, n. 1, p. 95, doi. 10.1007/s10812-006-0041-0
By:
- Mudryi, A.;
- Ivanyukovich, A.;
- Korotkii, A.;
- Emtsev, V.;
- Yakushev, M.
Publication type:
Article
Radiation-induced defects in thin Cu(In,Ga)Se2 films on exposure to high-energy electron irradiation.
Published in:
Journal of Applied Spectroscopy, 2005, v. 72, n. 6, p. 883, doi. 10.1007/s10812-006-0020-5
By:
- Mudryi, A.;
- Gremenok, V.;
- Ivanyukovich, A.;
- Yakushev, M.;
- Feofanov, Ya.
Publication type:
Article
Effect of Electron Irradiation on the Photopleochroism of ZnO/CdS/Cu(In,Ga)Se2 Solar Cells.
Published in:
Technical Physics Letters, 2005, v. 31, n. 8, p. 698, doi. 10.1134/1.2035370
By:
- Baıramov, B. Kh.;
- Nikolaev, Yu. A.;
- Rud', V. Yu.;
- Rud', Yu. V.;
- Terukov, E. I.;
- Yakushev, M. V.
Publication type:
Article
Use of ellipsometric measurements for high-sensitivity monitoring of surface temperature.
Published in:
Technical Physics Letters, 1999, v. 25, n. 7, p. 577, doi. 10.1134/1.1262559
By:
- Yakushev, M. V.;
- Shvets, V. A.
Publication type:
Article
Theory and Calculation of Electrostatic Electron Mirrors with Allowance for Relativistic Effects.
Published in:
Technical Physics, 2021, v. 66, n. 5, p. 690, doi. 10.1134/S1063784221050054
By:
- Bimurzaev, S. B.;
- Yakushev, E. M.
Publication type:
Article
High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy.
Published in:
Technical Physics, 2013, v. 58, n. 10, p. 1536, doi. 10.1134/S1063784213100198
By:
- Mynbaev, K.;
- Bazhenov, N.;
- Shilyaev, A.;
- Dvoretskii, S.;
- Mikhailov, N.;
- Yakushev, M.;
- Remesnik, V.;
- Varavin, V.
Publication type:
Article
Strong interband Faraday rotation in 3D topological insulator Bi2Se3.
Published in:
Scientific Reports, 2016, p. 19087, doi. 10.1038/srep19087
By:
- Ohnoutek, L.;
- Hakl, M.;
- Veis, M.;
- Piot, B. A.;
- Faugeras, C.;
- Martinez, G.;
- Yakushev, M. V.;
- Martin, R. W.;
- Drašar, Č.;
- Materna, A.;
- Strzelecka, G.;
- Hruban, A.;
- Potemski, M.;
- Orlita, M.
Publication type:
Article
Photoacoustic Spectroscopy of Defect States in Etched and Air-annealed CuInSe.
Published in:
Crystal Research & Technology, 1995, v. 30, n. 4, p. 517, doi. 10.1002/crat.2170300417
By:
- Zegadi, A.;
- Yakushev, M. V.;
- Neumann, H.;
- Slifkin, M. A.;
- Tomlinson, R. D.
Publication type:
Article
Ion channeling study of defects in CuInTe.
Published in:
Crystal Research & Technology, 1995, v. 30, n. 1, p. 121, doi. 10.1002/crat.2170300119
By:
- Yakushev, M. V.;
- Neumann, H.;
- Tomlinson, R. D.
Publication type:
Article
Comparative optical absorption and photoreflectance study of n-type CuInSe.
Published in:
Crystal Research & Technology, 1994, v. 29, n. 5, p. 719, doi. 10.1002/crat.2170290527
By:
- Neumann, H.;
- Hörig, W.;
- Jones, P. A.;
- Lippold, G.;
- Sobotta, H.;
- Tomlinson, R. D.;
- Yakushev, M. V.
Publication type:
Article
Effect of plasma hydrogenation on the defect properties of CuInSe.
Published in:
Crystal Research & Technology, 1994, v. 29, n. 3, p. 427, doi. 10.1002/crat.2170290329
By:
- Yakushev, M. V.;
- Zegadi, A.;
- Neumann, H.;
- Jones, P. A.;
- Hill, A. E.;
- Pilkington, R. D.;
- Slifkin, M. A.;
- Tomlinson, R. D.
Publication type:
Article
Influence of proton implantation on the properties of CuInSe.
Published in:
Crystal Research & Technology, 1994, v. 29, n. 3, p. 417, doi. 10.1002/crat.2170290328
By:
- Yakushev, M. V.;
- Neumann, H.;
- Tomlinson, R. D.;
- Rimmer, P.;
- Lippold, G.
Publication type:
Article
Influence of proton implantation on the properties of CuInSe.
Published in:
Crystal Research & Technology, 1994, v. 29, n. 1, p. 125, doi. 10.1002/crat.2170290127
By:
- Yakushev, M. V.;
- Tomlinson, R. D.;
- Neumann, H.
Publication type:
Article
Electrical Properties of CuInSe.
Published in:
Crystal Research & Technology, 1993, v. 28, n. 2, p. 267, doi. 10.1002/crat.2170280221
By:
- Tomlinson, R. D.;
- Yakushev, M. V.;
- Neumann, H.
Publication type:
Article
Diode n-p CuInSe.
Published in:
Crystal Research & Technology, 1990, v. 25, n. 11, p. 1299, doi. 10.1002/crat.2170251113
By:
- Medvedkin, G. A.;
- Yu. Rud, V.;
- Yakushev, M. V.
Publication type:
Article
An Ion-Optical Circuit of a Small-Sized Mass-Spectrometer for the Isotope Analysis of Hydrogen–Helium Mixtures.
Published in:
Journal of Analytical Chemistry, 2020, v. 75, n. 13, p. 1693, doi. 10.1134/S1061934820130134
By:
- Sachenko, V. D.;
- Yakushev, E. M.;
- Nazarenko, L. M.;
- Antonov, A. S.;
- Gall, L. N.;
- Gall, N. R.;
- Berdnikov, A. S.
Publication type:
Article

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