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  • Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 4, p. 1, doi. 10.1002/pssa.201900532
    By:
    • Gudovskikh, Alexander S.;
    • Uvarov, Alexander. V.;
    • Morozov, Ivan A.;
    • Bukatin, Anton S.;
    • Baranov, Artem I.;
    • Kudryashov, Dmitry A.;
    • Kalyuzhnyy, Nikolay A.;
    • Mintairov, Sergey A.;
    • Zubkov, Vasily I.;
    • Yakovlev, George E.;
    • Kleider, Jean-Paul
    Publication type:
    Article

  • Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900532
    By:
    • Gudovskikh, Alexander S.;
    • Uvarov, Alexander. V.;
    • Morozov, Ivan A.;
    • Bukatin, Anton S.;
    • Baranov, Artem I.;
    • Kudryashov, Dmitry A.;
    • Kalyuzhnyy, Nikolay A.;
    • Mintairov, Sergey A.;
    • Zubkov, Vasily I.;
    • Yakovlev, George E.;
    • Kleider, Jean-Paul
    Publication type:
    Article