Found: 6
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Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor.
- Published in:
- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-392
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- Article
A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory.
- Published in:
- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-603
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- Article
Compensation of Voltage Sags and Swells Using Dynamic Voltage Restorer Based on Bi-Directional H-Bridge AC/AC Converter.
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- Processes, 2021, v. 9, n. 9, p. 1541, doi. 10.3390/pr9091541
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- Article
High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 8, p. 1310, doi. 10.3390/nano13081310
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- Article
Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET).
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- Nanomaterials (2079-4991), 2022, v. 12, n. 20, p. 3712, doi. 10.3390/nano12203712
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- Article
Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO 2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 13, p. 2165, doi. 10.3390/nano12132165
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- Article