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Influences of dielectric constant and scan rate on hysteresis effect in perovskite solar cell with simulation and experimental analyses.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-11899-x
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Study on the effect of size on InGaN red micro-LEDs.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05370-0
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- Article
Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT.
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- Micromachines, 2023, v. 14, n. 2, p. 423, doi. 10.3390/mi14020423
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- Article
Influences of dielectric constant and scan rate on hysteresis effect in perovskite solar cell with simulation and experimental analyses.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-11899-x
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- Publication type:
- Article
Giant gauge factor of Van der Waals material based strain sensors.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22316-8
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Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy.
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- Scientific Reports, 2017, p. 45519, doi. 10.1038/srep45519
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- Article
Numerical Analysis and Optimization of a Hybrid Layer Structure for Triplet–Triplet Fusion Mechanism in Organic Light‐Emitting Diodes.
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- Advanced Theory & Simulations, 2023, v. 6, n. 2, p. 1, doi. 10.1002/adts.202200633
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- Article
Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics.
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- Progress in Photovoltaics, 2014, v. 22, n. 4, p. 452, doi. 10.1002/pip.2291
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- Article
Hybrid classical-quantum linear solver using Noisy Intermediate-Scale Quantum machines.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-52275-6
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- Article
Analysis of Light‐Emission Polarization Ratio in Deep‐Ultraviolet Light‐Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k·p Method.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 2, p. 1, doi. 10.1002/pssr.202100498
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- Article
Study of the Factors Limiting the Efficiency of Vertical-Type Nitride- and AlInGaP-Based Quantum-Well Micro-LEDs.
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- Processes, 2022, v. 10, n. 3, p. 489, doi. 10.3390/pr10030489
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- Article
Electronic properties of MoS<sub>2</sub> nanoribbon with strain using tight-binding method.
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- Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201600565
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- Article
Characterization of semi-polar (202¯1) InGaN microLEDs.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-72720-1
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- Article
A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 6, p. 1, doi. 10.1002/pssa.201900522
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- Article
3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 1, p. N.PAG, doi. 10.1002/pssa.201800524
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- Article
Studies of 2D Bulk and Nanoribbon Band Structures in Mo<sub>x</sub>W<sub>1–x</sub>S<sub>2</sub> Alloy System Using Full sp<sup>3</sup>d<sup>5</sup> Tight‐Binding Model.
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- Physica Status Solidi (B), 2021, v. 258, n. 2, p. 1, doi. 10.1002/pssb.202000375
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- Article
Study of thermoelectric properties of indium nitride nanowire.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1562, doi. 10.1002/pssa.201001047
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- Article
Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells.
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- Nanoscale Research Letters, 2020, v. 15, n. 1, p. N.PAG, doi. 10.1186/s11671-020-03392-z
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- Article
Disorder effects in nitride semiconductors: impact on fundamental and device properties.
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- Nanophotonics (21928606), 2021, v. 10, n. 1, p. 3, doi. 10.1515/nanoph-2020-0590
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- Article
Efficient and Bright Organic Radical Light‐Emitting Diodes with Low Efficiency Roll‐Off.
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- Advanced Materials, 2023, v. 35, n. 45, p. 1, doi. 10.1002/adma.202303666
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- Article
High optical power and low‐efficiency droop blue light‐emitting diodes using compositionally step‐graded InGaN barrier.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1187, doi. 10.1049/el.2015.1647
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- Article