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2.3- μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor.
- Published in:
- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1770, doi. 10.1007/s11664-008-0495-3
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- Article