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Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization.
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- Advanced Engineering Materials, 2020, v. 22, n. 9, p. 1, doi. 10.1002/adem.201900778
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- Article
Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 295, doi. 10.1002/adem.200800292
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- Article
Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.
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- Crystals (2073-4352), 2023, v. 13, n. 11, p. 1590, doi. 10.3390/cryst13111590
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Multiscale Simulations for Defect-Controlled Processing of Group IV Materials.
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- Crystals (2073-4352), 2022, v. 12, n. 12, p. 1701, doi. 10.3390/cryst12121701
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- Article
Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process.
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- Materials (1996-1944), 2022, v. 15, n. 5, p. 1897, doi. 10.3390/ma15051897
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Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal.
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- Materials (1996-1944), 2019, v. 12, n. 22, p. 3652, doi. 10.3390/ma12223652
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- Article
Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals.
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- Materials (1996-1944), 2019, v. 12, n. 16, p. 2591, doi. 10.3390/ma12162591
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- Article
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide.
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- Materials (1996-1944), 2019, v. 12, n. 15, p. 2487, doi. 10.3390/ma12152487
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- Article
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks.
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- Materials (1996-1944), 2019, v. 12, n. 15, p. 2353, doi. 10.3390/ma12152353
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- Article
Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC.
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- Materials (1996-1944), 2019, v. 12, n. 13, p. 2207, doi. 10.3390/ma12132207
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- Article
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth.
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- Materials (1996-1944), 2019, v. 12, n. 13, p. 2179, doi. 10.3390/ma12132179
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Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC.
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- Crystal Research & Technology, 2023, v. 58, n. 7, p. 1, doi. 10.1002/crat.202300034
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- Article
Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results.
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- Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900121
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- Article
Solution Growth of Silicon Carbide Using the Vertical Bridgman Method.
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- Crystal Research & Technology, 2018, v. 53, n. 7, p. 1, doi. 10.1002/crat.201800019
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- Article
Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure.
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- Coatings (2079-6412), 2019, v. 9, n. 8, p. 484, doi. 10.3390/coatings9080484
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Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga<sub>2</sub>O<sub>3</sub>, and Diamond.
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- Zeitschrift für Anorganische und Allgemeine Chemie, 2017, v. 643, n. 21, p. 1312, doi. 10.1002/zaac.201700270
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- Article
Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites.
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- Physica Status Solidi (B), 2022, v. 259, n. 9, p. 1, doi. 10.1002/pssb.202200094
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Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters.
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- Physica Status Solidi (B), 2020, v. 257, n. 1, p. N.PAG, doi. 10.1002/pssb.201900286
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- Article