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Synthesis and Characterization of BaZrS<sub>3</sub> Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS<sub>3</sub> on Zirconium Foil and Silicon Carbide Substrates.
- Published in:
- Advanced Engineering Materials, 2024, v. 26, n. 18, p. 1, doi. 10.1002/adem.202302161
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- Publication type:
- Article
Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization.
- Published in:
- Advanced Engineering Materials, 2020, v. 22, n. 9, p. 1, doi. 10.1002/adem.201900778
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- Publication type:
- Article
Selection of essential records from a repository program to inform future generations: insights from a study for the Konrad repository.
- Published in:
- 2023
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- Publication type:
- Abstract
Knowledge Management in the Federal Company for Radioactive Waste Disposal (BGE).
- Published in:
- Safety of Nuclear Waste Disposal, 2021, v. 1, p. 251, doi. 10.5194/sand-1-251-2021
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- Publication type:
- Article
Epitaxial Metal Halide Perovskites by Inkjet‐Printing on Various Substrates.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 43, p. 1, doi. 10.1002/adfm.202004612
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- Publication type:
- Article
Synthesis of BaZrS 3 and BaS 3 Thin Films: High and Low Temperature Approaches.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 3, p. 267, doi. 10.3390/cryst14030267
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- Publication type:
- Article
Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.
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- Crystals (2073-4352), 2023, v. 13, n. 11, p. 1590, doi. 10.3390/cryst13111590
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- Article
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials.
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- Crystals (2073-4352), 2022, v. 12, n. 12, p. 1701, doi. 10.3390/cryst12121701
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- Publication type:
- Article
Flow Stability, Convective Heat Transfer and Chemical Reactions in Ammonothermal Autoclaves—Insights by In Situ Measurements of Fluid Temperatures.
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- Crystals (2073-4352), 2020, v. 10, n. 9, p. 723, doi. 10.3390/cryst10090723
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- Publication type:
- Article
Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure.
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- Coatings (2079-6412), 2019, v. 9, n. 8, p. 484, doi. 10.3390/coatings9080484
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- Publication type:
- Article
Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC.
- Published in:
- Crystal Research & Technology, 2023, v. 58, n. 7, p. 1, doi. 10.1002/crat.202300034
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- Publication type:
- Article
Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga<sub>2</sub>O<sub>3</sub>, and Diamond.
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- Zeitschrift für Anorganische und Allgemeine Chemie, 2017, v. 643, n. 21, p. 1312, doi. 10.1002/zaac.201700270
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- Publication type:
- Article
Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN<sub>2</sub> and ZnGeN<sub>2</sub> and Dissolution Monitoring by In Situ X-ray Imaging.
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- Chemistry - A European Journal, 2017, v. 23, n. 50, p. 12275, doi. 10.1002/chem.201701081
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- Publication type:
- Article
Depth-resolved and temperature dependent analysis of phase formation processes in Cu-Zn-Sn-Se films on ZnO substrates.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 7730, doi. 10.1007/s10854-017-6467-8
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- Publication type:
- Article
Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters.
- Published in:
- Physica Status Solidi (B), 2020, v. 257, n. 1, p. N.PAG, doi. 10.1002/pssb.201900286
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- Publication type:
- Article
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution.
- Published in:
- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1239, doi. 10.1002/pssb.200743520
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- Publication type:
- Article
Dislocation arrangements in 4H‐SiC and their influence on the local crystal lattice properties.
- Published in:
- Journal of Applied Crystallography, 2023, v. 56, n. 3, p. 776, doi. 10.1107/S1600576723003291
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- Publication type:
- Article
Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites.
- Published in:
- Physica Status Solidi (B), 2022, v. 259, n. 9, p. 1, doi. 10.1002/pssb.202200094
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- Publication type:
- Article
Novel Photonic Applications of Silicon Carbide.
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- Materials (1996-1944), 2023, v. 16, n. 3, p. 1014, doi. 10.3390/ma16031014
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- Publication type:
- Article
Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process.
- Published in:
- Materials (1996-1944), 2022, v. 15, n. 5, p. 1897, doi. 10.3390/ma15051897
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- Publication type:
- Article
Analysis of Compositional Gradients in Cu(In,Ga)(S,Se) 2 Solar Cell Absorbers Using Energy Dispersive X-ray Analysis with Different Acceleration Energies.
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- Materials (1996-1944), 2021, v. 14, n. 11, p. 2861, doi. 10.3390/ma14112861
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- Publication type:
- Article
Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal.
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- Materials (1996-1944), 2019, v. 12, n. 22, p. 3652, doi. 10.3390/ma12223652
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- Publication type:
- Article
Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules.
- Published in:
- Materials (1996-1944), 2019, v. 12, n. 19, p. 3272, doi. 10.3390/ma12193272
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- Publication type:
- Article
Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals.
- Published in:
- Materials (1996-1944), 2019, v. 12, n. 16, p. 2591, doi. 10.3390/ma12162591
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- Publication type:
- Article
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide.
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- Materials (1996-1944), 2019, v. 12, n. 15, p. 2487, doi. 10.3390/ma12152487
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- Publication type:
- Article
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks.
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- Materials (1996-1944), 2019, v. 12, n. 15, p. 2353, doi. 10.3390/ma12152353
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- Publication type:
- Article
Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC.
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- Materials (1996-1944), 2019, v. 12, n. 13, p. 2207, doi. 10.3390/ma12132207
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- Publication type:
- Article
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth.
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- Materials (1996-1944), 2019, v. 12, n. 13, p. 2179, doi. 10.3390/ma12132179
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- Publication type:
- Article
Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 295, doi. 10.1002/adem.200800292
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- Publication type:
- Article
The 50th Anniversary of the German Association for Crystal Growth, DGKK.
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- Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.202000009
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- Publication type:
- Article
Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results.
- Published in:
- Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900121
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- Publication type:
- Article
Solution Growth of Silicon Carbide Using the Vertical Bridgman Method.
- Published in:
- Crystal Research & Technology, 2018, v. 53, n. 7, p. 1, doi. 10.1002/crat.201800019
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- Publication type:
- Article
Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping page 2-9 by Peter Wellmann et al.
- Published in:
- 2015
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- Publication type:
- Other
Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping.
- Published in:
- Crystal Research & Technology, 2015, v. 50, n. 1, p. 2, doi. 10.1002/crat.201400216
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- Publication type:
- Article