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Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds.
- Published in:
- Russian Physics Journal, 2018, v. 61, n. 8, p. 1450, doi. 10.1007/s11182-018-1555-7
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Physical Properties of Solid Solutions In<sub>x</sub>Al<sub>1-x</sub>N.
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- Russian Physics Journal, 2018, v. 61, n. 6, p. 1160, doi. 10.1007/s11182-018-1511-6
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- Article
In<sub>x</sub>Al<sub>1 –</sub><sub>x</sub>N Solid Solutions: Composition Stability Issues.
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- Semiconductors, 2019, v. 53, n. 12, p. 1724, doi. 10.1134/S1063782619160061
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- Article
Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy.
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- Semiconductors, 2002, v. 36, n. 9, p. 953, doi. 10.1134/1.1507270
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- Article
Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.
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- Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790
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- Article
Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions on Structure and Properties of Layers.
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- Crystallography Reports, 2002, v. 47, n. 7, p. S118, doi. 10.1134/1.1529966
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- Article