OpenURL Connection Search

Select item for more details and to access through your institution.

Growth and characterization of A-plane ZnO and ZnCoO based heterostructures.
Published in:
Applied Physics A: Materials Science & Processing, 2007, v. 88, n. 1, p. 65, doi. 10.1007/s00339-007-3983-z
By:
- Chauveau, J.-M.;
- Morhain, C.;
- Lo, B.;
- Vinter, B.;
- Vennéguès, P.;
- Laügt, M.;
- Buell, D.;
- Tesseire-Doninelli, M.;
- Neu, G.
Publication type:
Article
X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy.
Published in:
Applied Physics A: Materials Science & Processing, 2007, v. 88, n. 1, p. 61, doi. 10.1007/s00339-007-3977-x
By:
- Martínez-Tomás, M.C.;
- Zúñiga-Pérez, J.;
- Vennéguès, P.;
- Tottereau, O.;
- Muñoz-Sanjosé, V.
Publication type:
Article
Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth.
Published in:
Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1878, doi. 10.1007/s11671-010-9724-9
By:
- Kriouche, N.;
- Leroux, M.;
- Vennéguès, P.;
- Nemoz, M.;
- Nataf, G.;
- Mierry, P.
Publication type:
Article
Al5+αSi5+δN12, a new Nitride compound.
Published in:
Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-52363-7
By:
- Dagher, R.;
- Lymperakis, L.;
- Delaye, V.;
- Largeau, L.;
- Michon, A.;
- Brault, J.;
- Vennéguès, P.
Publication type:
Article
Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy.
Published in:
Physica Status Solidi (B), 2016, v. 253, n. 11, p. 2225, doi. 10.1002/pssb.201600364
By:
- Nguyen, X. S.;
- Hou, H. W.;
- De Mierry, P.;
- Vennéguès, P.;
- Tendille, F.;
- Arehart, A. R.;
- Ringel, S. A.;
- Fitzgerald, E. A.;
- Chua, S. J.
Publication type:
Article
Green emission from semipolar InGaN quantum wells grown on low-defect (.
Published in:
Physica Status Solidi (B), 2016, v. 253, n. 1, p. 105, doi. 10.1002/pssb.201552298
By:
- de Mierry, P.;
- Kappei, L.;
- Tendille, F.;
- Vennéguès, P.;
- Leroux, M.;
- Zuniga‐Perez, J.
Publication type:
Article
2D versus 3D Growth Mode in ZnO Layers Grown by Plasma-Enhanced Molecular Beam Epitaxy on (0001) Sapphire.
Published in:
Physica Status Solidi (B), 2002, v. 229, n. 2, p. 931, doi. 10.1002/1521-3951(200201)229:2<931::AID-PSSB931>3.0.CO;2-J
By:
- Vigué, F.;
- Deparis, C.;
- Vennéguès, P.;
- Vézian, S.;
- Laügt, M.;
- Lorenzini, P.;
- Morhain, C.;
- Raymond, F.;
- Guion, J.;
- Faurie, J.P.
Publication type:
Article
TEM Study of the Behavior of Dislocations during ELO of GaN.
Published in:
Physica Status Solidi (B), 1999, v. 216, n. 1, p. 691, doi. 10.1002/(SICI)1521-3951(199911)216:1<691::AID-PSSB691>3.0.CO;2-8
By:
- Bousquet, V.;
- Vennéguès, P.;
- Beaumont, B.;
- Vaille, M.;
- Gibart, P.
Publication type:
Article
AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 3, p. 480, doi. 10.1002/pssa.201200572
By:
- Rennesson, S.;
- Damilano, B.;
- Vennéguès, P.;
- Chenot, S.;
- Cordier, Y.
Publication type:
Article
Evidence of multimicrometric coherent γ′ precipitates in a hot-forged γ-γ′ nickel-based superalloy.
Published in:
Journal of Microscopy, 2016, v. 263, n. 1, p. 106, doi. 10.1111/jmi.12380
By:
- CHARPAGNE, M.‐A.;
- VENNÉGUÈS, P.;
- BILLOT, T.;
- FRANCHET, J.‐M.;
- BOZZOLO, N.
Publication type:
Article
Intentional polarity conversion of AlN epitaxial layers by oxygen.
Published in:
Scientific Reports, 2018, v. 8, n. 1, p. 1, doi. 10.1038/s41598-018-32489-w
By:
- Stolyarchuk, N.;
- Markurt, T.;
- Courville, A.;
- March, K.;
- Zúñiga-Pérez, J.;
- Vennéguès, P.;
- Albrecht, M.
Publication type:
Article
Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber.
Published in:
Journal of the American Ceramic Society, 2017, v. 100, n. 5, p. 1814, doi. 10.1111/jace.14774
By:
- Vermillac, M.;
- Lupi, J.‐F.;
- Peters, F.;
- Cabié, M.;
- Vennéguès, P.;
- Kucera, C.;
- Neisius, T.;
- Ballato, J.;
- Blanc, W.
Publication type:
Article

Found: 12

Growth and characterization of A-plane ZnO and ZnCoO based heterostructures.

X-ray and transmission electron microscopy characterization of twinned CdO thin films grown on a-plane sapphire by metalorganic vapour phase epitaxy.

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth.

Al<sub>5+α</sub>Si<sub>5+δ</sub>N<sub>12</sub>, a new Nitride compound.

Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy.

Green emission from semipolar InGaN quantum wells grown on low-defect (.

2D versus 3D Growth Mode in ZnO Layers Grown by Plasma-Enhanced Molecular Beam Epitaxy on (0001) Sapphire.

TEM Study of the Behavior of Dislocations during ELO of GaN.

AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy.

Evidence of multimicrometric coherent γ′ precipitates in a hot-forged γ-γ′ nickel-based superalloy.

Intentional polarity conversion of AlN epitaxial layers by oxygen.

Fiber-draw-induced elongation and break-up of particles inside the core of a silica-based optical fiber.