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Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields.
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- Acta Physica Polonica: A, 2011, v. 119, n. 2, p. 170
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- Article
Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1174, doi. 10.1134/S1063785018120556
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- Article
Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping.
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- Technical Physics Letters, 2018, v. 44, n. 2, p. 145, doi. 10.1134/S106378501802027X
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- Article
The Influence of the Annealing Regime on the Properties of Terahertz Antennas Based on Low-Temperature-Grown Gallium Arsenide.
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- Technical Physics Letters, 2018, v. 44, n. 1, p. 44, doi. 10.1134/S1063785018010169
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- Article
Contact Potential Difference in the Absence of a Current through a Sample in the Quantum Hall Effect Regime in InGaAs/InAlAs Heterostructure.
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- Physics of Metals & Metallography, 2024, v. 125, n. 2, p. 137, doi. 10.1134/S0031918X23603165
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- Article
THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures.
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- Optics & Spectroscopy, 2020, v. 128, n. 7, p. 1010, doi. 10.1134/S0030400X20070097
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- Article
Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains.
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- Journal of Communications Technology & Electronics, 2021, v. 66, n. 12, p. 1385, doi. 10.1134/S1064226921440017
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- Article
Effect of the spacer growth temperature on the electrophysical and structural properties of PHEMTs.
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- Technical Physics, 2007, v. 52, n. 4, p. 440, doi. 10.1134/S106378420704007X
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- Article
Conductance Anisotropy of δ-Si Doped GaAs Layers Grown by Molecular Beam Epitaxy on (111)A GaAs Substrates and Misoriented in the [211] Direction.
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- Doklady Physics, 2002, v. 47, n. 6, p. 419, doi. 10.1134/1.1493376
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- Article
Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates.
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- Crystallography Reports, 2020, v. 65, n. 3, p. 496, doi. 10.1134/S1063774520030104
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- Publication type:
- Article
New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate.
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- Crystallography Reports, 2019, v. 64, n. 2, p. 205, doi. 10.1134/S1063774519020111
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- Article
The electrical and structural properties of In<sub> y</sub>Ga<sub>1 − y</sub>As/In<sub> x</sub>Al<sub>1 − x</sub>As/InP quantum wells with different InAs content.
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- Crystallography Reports, 2010, v. 55, n. 1, p. 6, doi. 10.1134/S1063774510010025
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- Article
Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths.
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- Semiconductors, 2013, v. 47, n. 9, p. 1203, doi. 10.1134/S106378261309008X
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- Article
Electron transport in an InAlAs/InGaAs/InAlAs quantum well with a δ-Si doped barrier in high electric fields.
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- Semiconductors, 2010, v. 44, n. 7, p. 898, doi. 10.1134/S1063782610070122
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- Article
Drift velocity of electrons in quantum wells in high electric fields.
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- Semiconductors, 2009, v. 43, n. 4, p. 458, doi. 10.1134/S1063782609040095
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- Publication type:
- Article
The effect of spacer-layer growth temperature on mobility in a two-dimensional electron gas in PHEMT structures.
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- Semiconductors, 2006, v. 40, n. 12, p. 1445, doi. 10.1134/S1063782606120141
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- Article
Electron Magnetotransport in Coupled Quantum Wells with Double-Sided Doping.
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- Semiconductors, 2004, v. 38, n. 11, p. 1326, doi. 10.1134/1.1823069
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- Article
Electron Transport in Coupled Quantum Wells with Double-Sided Doping.
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- Semiconductors, 2003, v. 37, n. 6, p. 686, doi. 10.1134/1.1582536
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- Article
Features of Pulsed Laser Annealing of BC<sub>3</sub> Films on a Sapphire Substrate.
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- Technical Physics Letters, 2019, v. 45, n. 5, p. 446, doi. 10.1134/S1063785019050055
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- Article
QUANTUM AND TRANSPORT SCATTERING TIMES IN AlGaAs/InGaAs NANOHETEROSTRUCTURES WITH AlAs INSERTS IN THE SPACER LAYER.
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- Lithuanian Journal of Physics, 2015, v. 55, n. 4, p. 249
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- Publication type:
- Article
3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K.
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- Semiconductors, 2022, v. 56, n. 2, p. 71, doi. 10.1134/S1063782622010080
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- Article
Electron-Quantum Transport in Pseudomorphic and Metamorphic In<sub>0.2</sub>Ga<sub>0.8</sub>As-Based Quantum Wells.
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- Semiconductors, 2019, v. 53, n. 3, p. 339, doi. 10.1134/S1063782619030205
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- Article
Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.
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- 2018
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- Correction Notice
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures.
- Published in:
- Semiconductors, 2018, v. 52, n. 12, p. 1551, doi. 10.1134/S1063782618120102
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- Publication type:
- Article
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz.
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- Semiconductors, 2018, v. 52, n. 11, p. 1380, doi. 10.1134/S1063782618110118
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- Publication type:
- Article
Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains.
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- Semiconductors, 2018, v. 52, n. 4, p. 473, doi. 10.1134/S1063782618040036
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- Publication type:
- Article