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Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals.
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- Technical Physics Letters, 2008, v. 34, n. 5, p. 405, doi. 10.1134/S1063785008050131
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- Article
Mode Transformation in Hybrid Waveguides Based on Lithium Niobate for Efficient Coupling to a Standard Single Mode Fiber.
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- Technical Physics, 2023, v. 68, n. 11, p. 443, doi. 10.1134/S1063784223900334
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- Article
Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers.
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- Technical Physics, 2019, v. 64, n. 10, p. 1509, doi. 10.1134/S106378421910013X
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- Article
Lasing in 9.6-μm Quantum Cascade Lasers.
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- Technical Physics, 2018, v. 63, n. 10, p. 1511, doi. 10.1134/S1063784218100043
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- Article
InAsSbP Photodiodes for 2.6-2.8-µm Wavelengths.
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- Technical Physics, 2018, v. 63, n. 2, p. 226, doi. 10.1134/S1063784218020172
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- Article
Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments.
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- Technical Physics, 2014, v. 59, n. 6, p. 879, doi. 10.1134/S1063784214060152
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- Article
Electronic System of Remote Optical Control of LiNbO3 Mach-Zehnder Modulator Operating Point.
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- Electronics (2079-9292), 2023, v. 12, n. 1, p. 206, doi. 10.3390/electronics12010206
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- Article
Structural approach to enhance the fracture resistance of high-strength metallic materials.
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- International Applied Mechanics, 2006, v. 42, n. 8, p. 904, doi. 10.1007/s10778-006-0158-0
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Laws of Influence of Structural Characteristics on the Strength and Crack Resistance of Aging Metallic Materials.
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- International Applied Mechanics, 2005, v. 41, n. 1, p. 70, doi. 10.1007/s10778-005-0060-1
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- Article
On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb).
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- Semiconductors, 2023, v. 57, n. 13, p. 621, doi. 10.1134/S1063782623030193
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- Article
Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers.
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- Semiconductors, 2019, v. 53, n. 7, p. 930, doi. 10.1134/S1063782619070248
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- Article
Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers.
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- Semiconductors, 2018, v. 52, n. 12, p. 1603, doi. 10.1134/S106378261812014X
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- Article
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers.
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- Semiconductors, 2018, v. 52, n. 6, p. 745, doi. 10.1134/S1063782618060039
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- Article
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands.
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- Semiconductors, 2018, v. 52, n. 5, p. 622, doi. 10.1134/S1063782618050056
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- Article
Investigation of the Modified Structure of a Quantum Cascade Laser.
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- Semiconductors, 2018, v. 52, n. 1, p. 126, doi. 10.1134/S106378261801013X
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- Article
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures.
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- Semiconductors, 2017, v. 51, n. 2, p. 260, doi. 10.1134/S1063782617020269
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- Article
On the gain properties of 'thin' elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm.
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- Semiconductors, 2016, v. 50, n. 10, p. 1412, doi. 10.1134/S1063782616100201
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- Article
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect.
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- Semiconductors, 2016, v. 50, n. 6, p. 828, doi. 10.1134/S1063782616060051
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- Article
Photodiode 1 × 64 linear array based on a double p-InAsSbP/ n-InAsSb/ n-InAs heterostructure.
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- Semiconductors, 2016, v. 50, n. 5, p. 646, doi. 10.1134/S1063782616050122
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- Article
Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites.
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- Semiconductors, 2015, v. 49, n. 2, p. 247, doi. 10.1134/S1063782615020049
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- Article
Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells.
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- Semiconductors, 2014, v. 48, n. 9, p. 1217, doi. 10.1134/S1063782614090024
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- Article
Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges.
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- Semiconductors, 2013, v. 47, n. 12, p. 1570, doi. 10.1134/S1063782613120191
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- Article
Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices.
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- Semiconductors, 2013, v. 47, n. 11, p. 1478, doi. 10.1134/S1063782613110080
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- Article
A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters.
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- Semiconductors, 2011, v. 45, n. 9, p. 1219, doi. 10.1134/S1063782611090193
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- Article
Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures.
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- Semiconductors, 2010, v. 44, n. 8, p. 1064, doi. 10.1134/S1063782610080191
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- Article
Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors.
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- Semiconductors, 2010, v. 44, n. 5, p. 672, doi. 10.1134/S1063782610050222
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- Article
Spin injection in GaAs/GaSb quantum-well heterostructures.
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- Semiconductors, 2010, v. 44, n. 2, p. 194, doi. 10.1134/S1063782610020107
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- Article
Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices.
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- JETP Letters, 2016, v. 103, n. 2, p. 122, doi. 10.1134/S002136401602003X
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- Article
Micro-Photoluminescence Studies of CdSe/ZnSe Quantum Dot Structures Grown under Different Conditions.
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- Acta Physica Polonica: A, 2016, v. 129, n. 1A, p. A-117, doi. 10.12693/APhysPolA.129.A-117
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- Article
Negative Differential Conductivity in InAs/AlSb Superlattices.
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- Acta Physica Polonica: A, 2011, v. 119, n. 2, p. 210
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- Article
Array of InGaAsSb light-emitting diodes (λ = 3.7 μm).
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- Semiconductors, 2009, v. 43, n. 4, p. 508, doi. 10.1134/S1063782609040198
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- Article
Highly sensitive submillimeter InSb photodetectors.
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- Semiconductors, 2008, v. 42, n. 10, p. 1234, doi. 10.1134/S1063782608100163
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- Article
Large-magnitude spin polarization of electrons in an InAs-based diode structure.
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- Semiconductors, 2007, v. 41, n. 11, p. 1293, doi. 10.1134/S1063782607110024
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- Article
Anomalous electron spin splitting in InAs pumped by injection.
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- Semiconductors, 2007, v. 41, n. 5, p. 570, doi. 10.1134/S1063782607050181
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- Article
Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures.
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- Physica Status Solidi (B), 2016, v. 253, n. 8, p. 1503, doi. 10.1002/pssb.201600064
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- Article
p‐InAsSbP/n‐InAs Double Heterostructure as an On‐Chip Midinfrared Evanescent Wave Sensor of Liquids.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 2, p. 1, doi. 10.1002/pssa.202100456
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- Article
InAs<sub>0.7</sub>Sb<sub>0.3</sub> Bulk Photodiodes Operating at Thermoelectric‐Cooler Temperatures.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 7, p. 1, doi. 10.1002/pssa.201700694
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- Article
Longwave (λ<sub>0.1</sub> = 10 μm, 296 K) Infrared Photodetectors Based on InAsSb<sub>0.38</sub> Solid Solution.
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- Optics & Spectroscopy, 2024, v. 132, n. 2, p. 158, doi. 10.1134/S0030400X24020115
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- Article
On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions.
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- Optics & Spectroscopy, 2023, v. 131, n. 1, p. 31, doi. 10.1134/S0030400X23030116
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- Article
On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance.
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- Optics & Spectroscopy, 2021, v. 129, n. 11, p. 1231, doi. 10.1134/S0030400X21090101
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- Article
Electronic Transport in InAs/AlSb Superlattices with Electric Domains.
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- Journal of Communications Technology & Electronics, 2022, v. 67, n. 7, p. 882, doi. 10.1134/S1064226922070026
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- Article
Features of Tunneling Current in Superlattices with Electrical Domains.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 10, p. 1140, doi. 10.1134/S1064226919090158
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- Article
NON-RESONANT TUNNELLING IN SHORT-PERIOD SUPERLATTICES WITH OPTICAL CAVITIES.
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- Lithuanian Journal of Physics, 2014, v. 54, n. 1, p. 50, doi. 10.3952/lithjphys.54112
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- Article
Power-over-Fiber with Simultaneous Transmission of Optical Carrier for a High Frequency Analog Signal over Standard Single-Mode Fiber.
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- Photonics, 2023, v. 10, n. 1, p. 17, doi. 10.3390/photonics10010017
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- Article
Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature.
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- Technical Physics Letters, 2018, v. 44, n. 9, p. 814, doi. 10.1134/S1063785018090249
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- Article
Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range.
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- Technical Physics Letters, 2018, v. 44, n. 2, p. 174, doi. 10.1134/S1063785018020189
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- Article
MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells.
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- Technical Physics Letters, 2015, v. 41, n. 9, p. 905, doi. 10.1134/S1063785015090229
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- Article
Power increase in Q-switched two-sectional quantum well lasers due to Stark effect.
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- Technical Physics Letters, 2015, v. 41, n. 10, p. 984, doi. 10.1134/S106378501510020X
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- Article
Metal Electrodes for Filtering the Localized Fundamental Mode of a Ridge Optical Waveguide on a Thin Lithium Niobate Nanofilm.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 20, p. 2755, doi. 10.3390/nano13202755
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- Article