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Double gate operation of metal nanodot array based single electron device.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-15734-1
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- Article
Strong Surface-Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions.
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- Advanced Functional Materials, 2015, v. 25, n. 18, p. 2708, doi. 10.1002/adfm.201500371
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- Article
Dynamics of an Electrically Driven Phase Transition in Ca<sub>2</sub>RuO<sub>4</sub> Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201303
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- Article
Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.
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- Scientific Reports, 2015, p. 17103, doi. 10.1038/srep17103
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- Article
Controlled Current Transport in Pt/Nb:SrTiO<sub>3</sub> Junctions via Insertion of Uniform Thin Layers of TaO<sub>x</sub>.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 7, p. N.PAG, doi. 10.1002/pssr.201900136
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- Article