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Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences.
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- Physica Status Solidi (B), 2001, v. 228, n. 1, p. 95, doi. 10.1002/1521-3951(200111)228:1<95::AID-PSSB95>3.0.CO;2-Q
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Large Spectral Splitting of TE and TM Components of QDs in a Microcavity.
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- Physica Status Solidi (B), 2001, v. 224, n. 3, p. 811, doi. 10.1002/(SICI)1521-3951(200104)224:3<811::AID-PSSB811>3.0.CO;2-X
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InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 μm Wavelength Range.
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- Physica Status Solidi (B), 2001, v. 224, n. 3, p. 803, doi. 10.1002/(SICI)1521-3951(200104)224:3<803::AID-PSSB803>3.0.CO;2-T
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Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 511, doi. 10.1002/(SICI)1521-3951(199911)216:1<511::AID-PSSB511>3.0.CO;2-7
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Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 435, doi. 10.1002/(SICI)1521-3951(199911)216:1<435::AID-PSSB435>3.0.CO;2-O
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