Found: 18
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Facility for Testing MSR Materials at the NRC Kurchatov Institute.
- Published in:
- Physics of Atomic Nuclei, 2023, v. 86, n. 8, p. 1914, doi. 10.1134/S1063778823080161
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On the Nature of the Decrease in the Rate of the B2 Ordering Process in a Cu–Pd Solid Solution as the Equiatomic Composition Is Approached.
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- Inorganic Materials, 2023, v. 59, n. 12, p. 1295, doi. 10.1134/S002016852312004X
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Defect structure of TiS<sub>3</sub> single crystals with different resistivity.
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- Journal of Materials Science, 2021, v. 56, n. 3, p. 2150, doi. 10.1007/s10853-020-05357-0
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- Article
The Study of Colored Zones on the Surface of a Stela from the Peschanny IV Burial Ground.
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- Crystallography Reports, 2023, v. 68, n. 1, p. 167, doi. 10.1134/S1063774523010157
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The Provenance Study of the Raw Materials of the Ancient Terracotta Found near the Crimean Bridge: Natural-Science Approach.
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- Crystallography Reports, 2022, v. 67, n. 7, p. 1279, doi. 10.1134/S1063774522070458
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- Article
Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates.
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- Crystallography Reports, 2020, v. 65, n. 3, p. 496, doi. 10.1134/S1063774520030104
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- Article
Structural Study of Defects in Granulated EP741NP Nickel Alloy.
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- Crystallography Reports, 2019, v. 64, n. 4, p. 570, doi. 10.1134/S1063774519040242
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- Article
New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate.
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- Crystallography Reports, 2019, v. 64, n. 2, p. 205, doi. 10.1134/S1063774519020111
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Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.
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- Crystallography Reports, 2017, v. 62, n. 6, p. 947, doi. 10.1134/S1063774517060104
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Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates.
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- Crystallography Reports, 2017, v. 62, n. 4, p. 589, doi. 10.1134/S1063774517030063
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- Article
Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures.
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- Crystallography Reports, 2017, v. 62, n. 2, p. 265, doi. 10.1134/S1063774517020298
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- Article
Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates.
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- Crystallography Reports, 2017, v. 62, n. 1, p. 82, doi. 10.1134/S1063774517010072
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- Article
Structural and electrophysical properties of InAlAs/InGaAs/InAlAs/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well.
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- Crystallography Reports, 2015, v. 60, n. 3, p. 397, doi. 10.1134/S1063774515030062
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Erratum to: 'Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well'.
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- 2015
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- Erratum
Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well.
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- Crystallography Reports, 2014, v. 59, n. 6, p. 900, doi. 10.1134/S1063774514060108
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Structural characterization and magnetic response of poly(p-xylylene)–MnSb and MnSb films deposited at cryogenic temperature.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-95475-9
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- Article
Control of Mooij correlations at the nanoscale in the disordered metallic Ta–nanoisland FeNi multilayers.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-78185-6
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High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2016, v. 10, n. 3, p. 495, doi. 10.1134/S1027451016030095
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- Article