Found: 15
Select item for more details and to access through your institution.
Spin-Dependent Electronic Dynamics in a Hybrid Nonresonance III-V/II-VI Heterostructure.
- Published in:
- Journal of Experimental & Theoretical Physics, 2018, v. 126, n. 2, p. 210, doi. 10.1134/S1063776118020012
- By:
- Publication type:
- Article
Midinfrared Injection-Pumped Laser Based on a III–V/II–VI Hybrid Heterostructure with Submonolayer InSb Insets.
- Published in:
- Technical Physics Letters, 2005, v. 31, n. 3, p. 235, doi. 10.1134/1.1894443
- By:
- Publication type:
- Article
SPIN DYNAMICS IN III-V/II-VI: Mn HETEROVALENT QUANTUM WELLS.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2009, v. 23, n. 12/13, p. 2739, doi. 10.1142/S0217979209062293
- By:
- Publication type:
- Article
Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures.
- Published in:
- Semiconductors, 2010, v. 44, n. 8, p. 1064, doi. 10.1134/S1063782610080191
- By:
- Publication type:
- Article
Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors.
- Published in:
- Semiconductors, 2010, v. 44, n. 5, p. 672, doi. 10.1134/S1063782610050222
- By:
- Publication type:
- Article
Spin injection in GaAs/GaSb quantum-well heterostructures.
- Published in:
- Semiconductors, 2010, v. 44, n. 2, p. 194, doi. 10.1134/S1063782610020107
- By:
- Publication type:
- Article
Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs.
- Published in:
- Semiconductors, 2009, v. 43, n. 5, p. 635, doi. 10.1134/S1063782609050182
- By:
- Publication type:
- Article
Highly Efficient Semiconductor Emitter of Single Photons in the Red Spectral Range.
- Published in:
- JETP Letters, 2019, v. 109, n. 3, p. 145, doi. 10.1134/S0021364019030135
- By:
- Publication type:
- Article
Large-magnitude spin polarization of electrons in an InAs-based diode structure.
- Published in:
- Semiconductors, 2007, v. 41, n. 11, p. 1293, doi. 10.1134/S1063782607110024
- By:
- Publication type:
- Article
Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.
- Published in:
- Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546
- By:
- Publication type:
- Article
MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells.
- Published in:
- Semiconductors, 2002, v. 36, n. 12, p. 1385
- By:
- Publication type:
- Article
Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy.
- Published in:
- Semiconductors, 2001, v. 35, n. 4, p. 419
- By:
- Publication type:
- Article
Photoluminescence of Ga[sub 1 – ][sub x]In[sub x]As[sub y]Sb[sub 1 – ][sub y] Solid Solutions Lattice-Matched to InAs.
- Published in:
- Semiconductors, 2000, v. 34, n. 12, p. 1376, doi. 10.1134/1.1331794
- By:
- Publication type:
- Article
III-V/II-VI heterovalent double quantum wells.
- Published in:
- Physica Status Solidi (B), 2006, v. 243, n. 4, p. 819, doi. 10.1002/pssb.200564763
- By:
- Publication type:
- Article
Electron spin resonance in GaSb–InAs–GaSb semimetal quantum wells.
- Published in:
- JETP Letters, 1998, v. 68, n. 10, p. 810, doi. 10.1134/1.567950
- By:
- Publication type:
- Article