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Correction: Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method.
- Published in:
- 2024
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- Publication type:
- Correction Notice
Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 5, p. 1, doi. 10.1007/s10854-024-12111-8
- By:
- Publication type:
- Article
A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 28, p. 1, doi. 10.1007/s10854-023-11302-z
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- Publication type:
- Article
Variation of the Surface States and Series Resistance Depending on Voltage, and Their Effects on the Electrical Features of a Schottky Structure with CdZnO Interface.
- Published in:
- Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2432, doi. 10.1007/s11664-022-10192-x
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- Publication type:
- Article