Found: 14
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A novel model for microwave C–V characteristics of an integrated planar Schottky varactor diode in MMICs.
- Published in:
- Microwave & Optical Technology Letters, 1998, v. 18, n. 6, p. 436, doi. 10.1002/(SICI)1098-2760(19980820)18:6<436::AID-MOP19>3.0.CO;2-X
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- Article
Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs.
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- Micromachines, 2020, v. 11, n. 1, p. 76, doi. 10.3390/mi11010076
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- Article
Ku‐band GaN 100‐W internally matched amplifier using accurate large signal model.
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- International Journal of Numerical Modelling, 2020, v. 33, n. 4, p. 1, doi. 10.1002/jnm.2596
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- Article
Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs.
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- International Journal of Numerical Modelling, 2020, v. 33, n. 3, p. 1, doi. 10.1002/jnm.2620
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- Article
A 220 GHz GaN‐based monolithic integrated frequency doubler delivering over 0.25 W output power.
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- Microwave & Optical Technology Letters, 2024, v. 66, n. 10, p. 1, doi. 10.1002/mop.34339
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- Article
Accurate on Wafer Calibration and S-Parameter Measurement Setup for InP-Based HEMT Devices to 220 GHz.
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- Progress in Electromagnetics Research M, 2024, v. 126, p. 99, doi. 10.2528/PIERM23110503
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- Article
Preparation of graphene/copper composites using solution-combusted porous sheet-like cuprous oxide.
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- Journal of Materials Science, 2019, v. 54, n. 1, p. 396, doi. 10.1007/s10853-018-2850-y
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- Article
Dynamic Spectral Modulation on Meta‐Waveguides Utilizing Liquid Crystal.
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- Advanced Science, 2023, v. 10, n. 34, p. 1, doi. 10.1002/advs.202304116
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- Article
Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1241, doi. 10.1002/pssa.201532805
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- Article
Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS<sub>2</sub> by Dielectric and Carrier Screening.
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- Advanced Materials, 2016, v. 28, n. 3, p. 547, doi. 10.1002/adma.201503033
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- Article
Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS<sub>2</sub> by Dielectric and Carrier Screening (Adv. Mater. 3/2016).
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- Advanced Materials, 2016, v. 28, n. 3, p. 546, doi. 10.1002/adma.201670019
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- Article
High-Performance Monolayer WS<sub>2</sub> Field-Effect Transistors on High-κ Dielectrics.
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- Advanced Materials, 2015, v. 27, n. 35, p. 5230, doi. 10.1002/adma.201502222
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- Article
Interface Engineering for High-Performance Top-Gated MoS<sub>2</sub> Field-Effect Transistors.
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- Advanced Materials, 2014, v. 26, n. 36, p. 6255, doi. 10.1002/adma.201402008
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- Article
An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band.
- Published in:
- Micromachines, 2018, v. 9, n. 8, p. 396, doi. 10.3390/mi9080396
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- Article