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Microstructural Characterization of High Indium-Composition InXGa1−XN Epilayers Grown on c-Plane Sapphire Substrates.
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- Microscopy & Microanalysis, 2013, v. 19, n. S5, p. 145, doi. 10.1017/S143192761301252X
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- Article
In Situ Study of Reduction Process of CuO Paste and Its Effect on Bondability of Cu-to-Cu Joints.
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- Journal of Electronic Materials, 2018, v. 47, n. 4, p. 2193, doi. 10.1007/s11664-017-6049-9
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- Article
Polarity Determination of Polarity-Controlled ZnO Films Using Photoresponse Characteristics.
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- Journal of Electronic Materials, 2013, v. 42, n. 4, p. 716, doi. 10.1007/s11664-012-2427-5
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- Article
Photoluminescence Properties of GaN with Dislocations Induced by Plastic Deformation.
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- Journal of Electronic Materials, 2006, v. 35, n. 4, p. 717, doi. 10.1007/s11664-006-0127-8
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- Article
Ultrafast Carrier Dynamics in ZnO Epitaxial Thin Films Studied by Optical Kerr Gate Luminescence Spectroscopy.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2001, v. 15, n. 28-30, p. 3669, doi. 10.1142/S0217979201008391
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- Article
Photoluminescence of Biexciton in ZnO Epitaxial Thin Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2001, v. 15, n. 28-30, p. 3611, doi. 10.1142/S0217979201008263
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- Article
Bandgap Renormalization Due to High-Density Carriers in ZnO Epitaxial Thin Films.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2001, v. 15, n. 28-30, p. 3737, doi. 10.1142/S0217979201008548
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- Article
Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films.
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- Journal of Electron Microscopy, 2012, v. 61, n. 1, p. 25, doi. 10.1093/jmicro/dfr093
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- Article
OPTICAL PROPERTIES OF SEMICONDUCTOR QUANTUM STRUCTURES CdTe/ZnSe:: CONTRIBUTION OF CdTe QUANTUM DOTS.
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- International Journal of Nanoscience, 2004, v. 3, n. 3, p. 265, doi. 10.1142/S0219581X04002061
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- Article
MBE growth of Zn-polar ZnO on MOCVD-ZnO templates.
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- Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2825, doi. 10.1002/pssb.200405055
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- Article
Properties of ultraviolet anti-Stokes photoluminescence in ZnO single crystals.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 4, p. 761, doi. 10.1002/pssa.201127551
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- Article
Suppression of composition modulation in In-rich In<sub> x</sub>Ga<sub>1− x</sub>N layer with high In content ( x ∼ 0.67).
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 12, p. 2737, doi. 10.1002/pssa.201127307
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- Article
Ammonothermal synthesis of thick gallium nitride film employing acidic mineralizers.
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- Journal of Materials Science, 2008, v. 43, n. 7, p. 2270, doi. 10.1007/s10853-007-1949-3
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- Article
Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N2 atmosphere.
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- Crystal Research & Technology, 2007, v. 42, n. 7, p. 713
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- Article
Preparation of GaN crystals by heating a Li3N-added Ga melt in Na vapor and their photoluminescence.
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- Crystal Research & Technology, 2007, v. 42, n. 1, p. 13
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- Article