Found: 14
Select item for more details and to access through your institution.
SrTiO<sub>3</sub>:Eu<sup>3+</sup> phosphors prepared by sol-gel synthesis: Structural characterization, magnetic properties and luminescence spectroscopy study.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 343, doi. 10.15407/spqeo19.04.343
- By:
- Publication type:
- Article
The influence of size effects on local piezoelectric response of thin films.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 36
- By:
- Publication type:
- Article
Theory of the current-voltage ( I-U) characteristics of monopolar and quasi-monopolar semiconductors with different intensities of contact and volume injection.
- Published in:
- Physica Status Solidi (B), 1971, v. 44, n. 1, p. 85, doi. 10.1002/pssb.2220440108
- By:
- Publication type:
- Article
Spectroscopy of electroreflection, the electron band structure, and the mechanism of visible photoluminescence of anisotropically etched silicon.
- Published in:
- Journal of Experimental & Theoretical Physics, 1999, v. 89, n. 5, p. 948, doi. 10.1134/1.558936
- By:
- Publication type:
- Article
Edge Photoluminescence of Single-Crystal Silicon at Room Temperature.
- Published in:
- Semiconductors, 2005, v. 39, n. 4, p. 406, doi. 10.1134/1.1900253
- By:
- Publication type:
- Article
Spectra of Photoluminescence from Silicon Nanocrystals.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 336, doi. 10.1134/1.1561529
- By:
- Publication type:
- Article
Photoluminescent and Electronic Properties of Nanocrystalline Silicon Doped with Gold.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1027, doi. 10.1134/1.1507286
- By:
- Publication type:
- Article
Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures.
- Published in:
- Semiconductors, 2001, v. 35, n. 12, p. 1383, doi. 10.1134/1.1427976
- By:
- Publication type:
- Article
Luminescent ZnS:Cu Films Prepared by Chemical Methods.
- Published in:
- Semiconductors, 2000, v. 34, n. 10, p. 1128, doi. 10.1134/1.1317569
- By:
- Publication type:
- Article
Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures.
- Published in:
- Semiconductors, 1999, v. 33, n. 11, p. 1202, doi. 10.1134/1.1187849
- By:
- Publication type:
- Article
Photosensitive structures based on porous silicon.
- Published in:
- Semiconductors, 1999, v. 33, n. 3, p. 327, doi. 10.1134/1.1187689
- By:
- Publication type:
- Article
Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching.
- Published in:
- Semiconductors, 1997, v. 31, n. 12, p. 1221, doi. 10.1134/1.1187297
- By:
- Publication type:
- Article
Acceptors in Cd[sub 1-x]Mn[sub x]Te (x<0.1).
- Published in:
- Semiconductors, 1997, v. 31, n. 8, p. 869, doi. 10.1134/1.1187243
- By:
- Publication type:
- Article
Relaxation spectra of photoluminescence from porous silicon obtained by chemical etching of laser-modified silicon.
- Published in:
- Semiconductors, 1997, v. 31, n. 1, p. 4, doi. 10.1134/1.1187326
- By:
- Publication type:
- Article