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Microstructure and Thermal Expansion Properties of Invar-Type Cu-Zn-Al Shape Memory Alloys.
Published in:
Journal of Electronic Materials, 2004, v. 33, n. 10, p. 1098, doi. 10.1007/s11664-004-0110-1
By:
- Wang, J. J.;
- Omori, T.;
- Sutou, Y.;
- Kainuma, R.;
- Ishida, K.
Publication type:
Article
Martensitic and Magnetic Transformation Behaviors in Heusler-Type NiMnin and NiCoMnin Metamagnetic Shape Memory Alloys.
Published in:
Metallurgical & Materials Transactions. Part A, 2007, v. 38, n. 4, p. 759, doi. 10.1007/s11661-007-9094-9
By:
- Ito, W.;
- Imano, Y.;
- Kainuma, R.;
- Sutou, Y.;
- Oikawa, K.;
- Eshida, K.
Publication type:
Article
Magnetic-field-induced shape recovery by reverse phase transformation.
Published in:
Nature, 2006, v. 439, n. 7079, p. 957, doi. 10.1038/nature04493
By:
- Kainuma, R.;
- Imano, Y.;
- Ito, W.;
- Sutou, Y.;
- Morito, H.;
- Okamoto, S.;
- Kitakami, O.;
- Oikawa, K.;
- Fujita, A.;
- Kanomata, T.;
- Ishida, K.
Publication type:
Article
Ductile Cu–Al–Mn based shape memory alloys: general properties and applications.
Published in:
Materials Science & Technology, 2008, v. 24, n. 8, p. 896, doi. 10.1179/174328408X302567
By:
- Sutou, Y.;
- Omori, T.;
- Kainuma, R.;
- Ishida, K.
Publication type:
Article
Potential of superelastic Cu-Al-Mn alloy bars for seismic applications.
Published in:
Earthquake Engineering & Structural Dynamics, 2011, v. 40, n. 1, p. 107, doi. 10.1002/eqe.1029
By:
- Araki, Y.;
- Endo, T.;
- Omori, T.;
- Sutou, Y.;
- Koetaka, Y.;
- Kainuma, R.;
- Ishida, K.
Publication type:
Article
Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory.
Published in:
Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 6, p. 350, doi. 10.1049/el.2017.3902
By:
- An, J. S.;
- Kim, K. J.;
- Choi, C. M.;
- Shindo, S.;
- Sutou, Y.;
- Song, Y. H.
Publication type:
Article
Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory.
Published in:
Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 6, p. 350, doi. 10.1049/el.2017.3902
By:
- An, J.S.;
- Kim, K.J.;
- Choi, C.M.;
- Shindo, S.;
- Sutou, Y.;
- Song, Y.H.
Publication type:
Article
Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT).
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 18, p. 1514, doi. 10.1049/el.2016.2211
By:
- J. S. An;
- C. M. Choi;
- Y. Shindo;
- Y. Sutou;
- H. S. Jeong;
- Y. H. Song
Publication type:
Article
Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT).
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 18, p. 1514, doi. 10.1049/el.2016.2211
By:
- An, J.S.;
- Choi, C.M.;
- Shindo, Y.;
- Sutou, Y.;
- Jeong, H.S.;
- Song, Y.H.
Publication type:
Article

Found: 9

Microstructure and Thermal Expansion Properties of Invar-Type Cu-Zn-Al Shape Memory Alloys.

Martensitic and Magnetic Transformation Behaviors in Heusler-Type NiMnin and NiCoMnin Metamagnetic Shape Memory Alloys.

Magnetic-field-induced shape recovery by reverse phase transformation.

Ductile Cu–Al–Mn based shape memory alloys: general properties and applications.

Potential of superelastic Cu-Al-Mn alloy bars for seismic applications.

Investigation of bias polarity dependence of set operation in GeCu<sub>2</sub>Te<sub>3</sub> phase change memory.

Investigation of bias polarity dependence of set operation in GeCu<sub>2</sub>Te<sub>3</sub> phase change memory.

Investigation of an erasing method for synaptic behaviour in a phase change device using Ge<sub>1</sub>Cu<sub>2</sub>Te<sub>3</sub> (GCT).

Investigation of an erasing method for synaptic behaviour in a phase change device using Ge<sub>1</sub>Cu<sub>2</sub>Te<sub>3</sub> (GCT).