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Formation and simulation of a thermally stable NiSi FUSI gate electrode by a novel integration process.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 411, doi. 10.1007/s10854-007-9355-9
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A thermally robust Ni-FUSI process using in 65 nm CMOS technology.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 8, p. 847, doi. 10.1007/s10854-006-9088-1
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- Article