Found: 7
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High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 1, p. 29, doi. 10.1007/s11664-009-0960-7
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- Article
Characterization of Mg-Doped AlInN Annealed in Nitrogen and Oxygen Ambients.
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- Journal of Electronic Materials, 2008, v. 37, n. 8, p. 1070, doi. 10.1007/s11664-008-0496-2
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- Article
AFM study of gold nanowire array electrodeposited within anodic aluminum oxide template.
- Published in:
- Applied Physics A: Materials Science & Processing, 2002, v. 74, n. 4, p. 563, doi. 10.1007/s003390100909
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- Article
Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn.
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- Applied Physics A: Materials Science & Processing, 2006, v. 84, n. 4, p. 439, doi. 10.1007/s00339-006-3632-y
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- Article
The dependence of Co nanoparticle sizes on the ratio of surfactants and the influence of different crystal sizes on magnetic properties.
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- Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 3, p. 569, doi. 10.1007/s00339-004-2713-z
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- Article
Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching.
- Published in:
- Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 8, p. 1607, doi. 10.1007/s00339-005-3219-z
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- Article
Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers.
- Published in:
- Physica Status Solidi (B), 2004, v. 241, n. 12, p. 2693, doi. 10.1002/pssb.200405012
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- Article