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New approaches for growth control of GaN-based HEMT structures.
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- Applied Physics A: Materials Science & Processing, 2007, v. 87, n. 3, p. 491, doi. 10.1007/s00339-007-3933-9
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Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides.
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- Physica Status Solidi (B), 2005, v. 242, n. 13, p. 2581, doi. 10.1002/pssb.200541099
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- Article