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Femtosecond Laser Lift‐Off with Sub‐Bandgap Excitation for Production of Free‐Standing GaN Light‐Emitting Diode Chips.
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- Advanced Engineering Materials, 2020, v. 22, n. 2, p. 1, doi. 10.1002/adem.201901192
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- Article
3D GaN Fins as a Versatile Platform for a‐Plane‐Based Devices.
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- Physica Status Solidi (B), 2019, v. 256, n. 4, p. N.PAG, doi. 10.1002/pssb.201800477
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- Article
A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200485
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- Article
Preparation Techniques for Cross‐Section Transmission Electron Microscopy Lamellas Suitable for Investigating In Situ Silicon–Aluminum Alloying at Grain Boundaries in Multicrystalline Silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 17, p. N.PAG, doi. 10.1002/pssa.201900308
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- Article
Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization.
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- Microsystems & Nanoengineering, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1038/s41378-020-00198-y
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- Article
Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 4, p. 836, doi. 10.3390/nano11040836
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- Article
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures.
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- Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-18914-7
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- Article