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Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterointerface electron system.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-10425-3
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Implementation of Flip-Chip Microbump Bonding between InP and SiC Substrates for Millimeter-Wave Applications.
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- Micromachines, 2022, v. 13, n. 7, p. N.PAG, doi. 10.3390/mi13071072
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- Article
Gate-controlled metal-insulator transition in the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> system with sub-critical LaAlO<sub>3</sub> thickness.
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- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 12, p. 472, doi. 10.1002/pssr.201206428
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Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces.
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- Nature Communications, 2015, v. 6, n. 8, p. 8035, doi. 10.1038/ncomms9035
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Strong Rashba parameter of two-dimensional electron gas at CaZrO<sub>3</sub>/SrTiO<sub>3</sub> heterointerface.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-43247-y
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- Article