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Clinical and immunological features of prolonged and chronic endogenous manic and manic-delusional states in the structure of endogenous diseases.
Published in:
2024
By:
- Zozulya, S. A.;
- Rumyantseva, E. B.;
- Sizov, S. V.;
- Oleichik, I. V.;
- Klyushnik, T. P.
Publication type:
Abstract
Influence of Cathode Structure and Configuration on Complex Nitride Coatings.
Published in:
Russian Engineering Research, 2017, v. 37, n. 12, p. 1048, doi. 10.3103/S1068798X17120176
By:
- Tabakov, V. P.;
- Shirmanov, N. A.;
- Sizov, S. V.;
- Chikhranov, A. V.
Publication type:
Article
The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 924, doi. 10.1134/S106378261007016X
By:
- Sizov, V. S.;
- Tsatsulnikov, A. F.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Cherkashin, N. A.;
- Hÿtch, M. J.;
- Nikolaev, A. E.;
- Mintairov, A. M.;
- Yan He;
- Merz, J. L.
Publication type:
Article
A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 808, doi. 10.1134/S1063782610060205
By:
- Tsatsulnikov, A. F.;
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Kryzhanovskaya, N. V.;
- Synitsin, M. A.;
- Sizov, V. S.;
- Zakgeim, A. L.;
- Mizerov, M. N.
Publication type:
Article
Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232
By:
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Usov, S. O.;
- Sizov, V. S.;
- Mikhailovsky, G. A.;
- Cherkashin, N. A.;
- Hytch, M.;
- Hue, F.;
- Yakovlev, E. V.;
- Lobanova, A. V.;
- Tsatsulnikov, A. F.
Publication type:
Article
Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 807, doi. 10.1134/S1063782609060220
By:
- Sizov, V. S.;
- Gutkin, A. A.;
- Sakharov, A. V.;
- Lundin, V. V.;
- Brunkov, P. N.;
- Tsatsul'nikov, A. F.
Publication type:
Article
InGaN nanoinclusions in an AlGaN matrix.
Published in:
Semiconductors, 2008, v. 42, n. 7, p. 788, doi. 10.1134/S1063782608070075
By:
- Sizov, V. S.;
- Tsatsul'nikov, A. F.;
- Lundin, V. V.
Publication type:
Article
Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots.
Published in:
Semiconductors, 2007, v. 41, n. 5, p. 575, doi. 10.1134/S1063782607050193
By:
- Sizov, D. S.;
- Zavarin, E. E.;
- Ledentsov, N. N.;
- Lundin, V. V.;
- Musikhin, Yu. G.;
- Sizov, V. S.;
- Suris, R. A.;
- Tsatsul'nikov, A. F.
Publication type:
Article
The study of lateral carrier transport in structures with InGaN quantum dots in the active region.
Published in:
Semiconductors, 2006, v. 40, n. 5, p. 574, doi. 10.1134/S1063782606050113
By:
- Sizov, V. S.;
- Sizov, D. S.;
- Mikhailovskiĭ, G. A.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Studies of the Electron Spectrum in Structures with InGaN Quantum Dots Using Photocurrent Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 11, p. 1304, doi. 10.1134/1.2128455
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Lundin, V. V.;
- Tsatsul'nikov, A. F.;
- Zavarin, E. E.;
- Ledentsov, N. N.
Publication type:
Article
A Study of Carrier Statistics in InGaN/GaN LED Structures.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 467, doi. 10.1134/1.1900264
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Fomin, A. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers.
Published in:
Semiconductors, 2005, v. 39, n. 2, p. 249, doi. 10.1134/1.1864208
By:
- Sizov, D. S.;
- Sizov, V. S.;
- Zavarin, E. E.;
- Lundin, V. V.;
- Fomin, A. V.;
- Tsatsul'nikov, A. F.;
- Ledentsov, N. N.
Publication type:
Article
INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR.
Published in:
International Journal of Nanoscience, 2007, v. 6, n. 5, p. 327, doi. 10.1142/S0219581X07004882
By:
- SIZOV, D. S.;
- SIZOV, V. S.;
- LUNDIN, V. V.;
- ZAVARIN, E. E.;
- TSATSUL'NIKOV, A. F.;
- MUSIKHIN, YU. G.;
- VLASOV, A. S.;
- LEDENTSOV, N. N.;
- MINTAIROV, A. M.;
- SUN, K.;
- MERZ, J.
Publication type:
Article
Clinical-Immunological Correlates in Post-COVID-19 Endogenous Psychoses.
Published in:
Neuroscience & Behavioral Physiology, 2023, v. 53, n. 2, p. 174, doi. 10.1007/s11055-023-01405-9
By:
- Zozulya, S. A.;
- Sizov, S. V.;
- Oleichik, I. V.;
- Klyushnik, T. P.
Publication type:
Article
Indium-rich island structures formed by in-situ nanomasking technology.
Published in:
Technical Physics Letters, 2009, v. 35, n. 11, p. 1016, doi. 10.1134/S1063785009110133
By:
- Zavarin, E. E.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Davydov, D. V.;
- Sizov, V. S.;
- Brunkov, P. N.;
- Goncharov, V. V.;
- Tsatsulnikov, A. F.
Publication type:
Article

Found: 15