Found: 14
Select item for more details and to access through your institution.
Chemical composition and light emission properties of Si-rich-SiO<sub>x</sub> layers prepared by magnetron sputtering.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 21
- By:
- Publication type:
- Article
The nature of red emission in porous silicon.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 60, doi. 10.15407/spqeo8.01.060
- By:
- Publication type:
- Article
Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 294, doi. 10.15407/spqeo6.03.294
- By:
- Publication type:
- Article
Properties of the shallow D... -centers in semiconductors with polar and covalent binding.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 269, doi. 10.15407/spqeo6.03.269
- By:
- Publication type:
- Article
The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon.
- Published in:
- Semiconductors, 2006, v. 40, n. 5, p. 598, doi. 10.1134/S1063782606050150
- By:
- Publication type:
- Article
Properties of Shallow-Level D[sup –]-Centers in Polar Semiconductors.
- Published in:
- Semiconductors, 2003, v. 37, n. 3, p. 302, doi. 10.1134/1.1561522
- By:
- Publication type:
- Article
Photoluminescence (λ<sub>m</sub> = 1.1 μm) in InSe Single Crystals and Its Relation to Photoconductivity.
- Published in:
- Physica Status Solidi (B), 1969, v. 35, n. 2, p. 1065, doi. 10.1002/pssb.19690350259
- By:
- Publication type:
- Article
On Photoconductivity of InSe Single Crystals.
- Published in:
- Physica Status Solidi (B), 1969, v. 31, n. 1, p. K59, doi. 10.1002/pssb.19690310165
- By:
- Publication type:
- Article
Studies on the Nature of CdS Single Crystal Sensitization by Etching.
- Published in:
- Physica Status Solidi (B), 1967, v. 24, n. 2, p. 543, doi. 10.1002/pssb.19670240217
- By:
- Publication type:
- Article
Determination of the Parameters of Sensitizing Recombination Centres in CdS and CdSe Single Crystals by Temperature and Optical Quenching of Photocurrents.
- Published in:
- Physica Status Solidi (B), 1965, v. 11, n. 1, p. 429, doi. 10.1002/pssb.19650110140
- By:
- Publication type:
- Article
Shake-Effect in Radiative Auger Recombination of Carriers on Two-Electron Impurity Centres in Semiconductors.
- Published in:
- Physica Status Solidi (B), 1985, v. 131, n. 2, p. 677, doi. 10.1002/pssb.2221310229
- By:
- Publication type:
- Article
The Auger Processes with Energy Transfer to the Bound Charge Carriers in Multi-Valley Semiconductors.
- Published in:
- Physica Status Solidi (B), 1984, v. 123, n. 1, p. 295, doi. 10.1002/pssb.2221230132
- By:
- Publication type:
- Article
Effect of Doping on the Metal-Dielectric Phase Transition in Tetrathiotetracene Iodide, TTT<sub>2</sub>I<sub>3</sub>.
- Published in:
- Physica Status Solidi (B), 1982, v. 110, n. 2, p. K145, doi. 10.1002/pssb.2221100255
- By:
- Publication type:
- Article
Auger Recombination of Carriers Bound to Different Centres Involving Phonons.
- Published in:
- Physica Status Solidi (B), 1980, v. 100, n. 2, p. K149, doi. 10.1002/pssb.2221000255
- By:
- Publication type:
- Article